Schuhmacher, Dominic

[["dc.bibliographiccitation.firstpage","653"],["dc.bibliographiccitation.issue","7-8"],["dc.bibliographiccitation.journal","Applied Physics B"],["dc.bibliographiccitation.lastpage","659"],["dc.bibliographiccitation.volume","74"],["dc.contributor.author","Dolgova, T. V."],["dc.contributor.author","Schuhmacher, D."],["dc.contributor.author","Marowsky, Gerd"],["dc.contributor.author","Fedyanin, A. A."],["dc.contributor.author","Aktsipetrov, O. A."],["dc.date.accessioned","2018-11-07T10:29:59Z"],["dc.date.available","2018-11-07T10:29:59Z"],["dc.date.issued","2002"],["dc.description.abstract","The technique of combined optical second-harmonic (SH) intensity and phase spectroscopy, which is the spectroscopic modification of SH phase measurements, is proposed to study the nonlinear optical response of semiconductor interfaces with spectrally close resonant contributions. The spectral dependences of SH intensity and phase from oxidised Si (111) and Ge (111) surfaces are studied in the range of 3.5- to 5-eV SH photon energy. The resonant behaviour of combined SH spectra is associated with a superposition of contributions from direct interband transitions at several critical points of Si and Ge band structures."],["dc.identifier.doi","10.1007/s00340-002-0917-5"],["dc.identifier.isi","000176764700008"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/43766"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.relation.issn","0946-2171"],["dc.title","Second-harmonic interferometric spectroscopy of buried interfaces of column IV semiconductors"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","51"],["dc.bibliographiccitation.issue","1-3"],["dc.bibliographiccitation.journal","Materials Science in Semiconductor Processing"],["dc.bibliographiccitation.lastpage","53"],["dc.bibliographiccitation.volume","4"],["dc.contributor.author","Schuhmacher, D."],["dc.contributor.author","Marowsky, Gerd"],["dc.contributor.author","Fedyanin, A. A."],["dc.contributor.author","Dolgova, T. V."],["dc.contributor.author","Aktsipetrov, O. A."],["dc.date.accessioned","2018-11-07T09:25:18Z"],["dc.date.available","2018-11-07T09:25:18Z"],["dc.date.issued","2001"],["dc.description.abstract","The intrinsic surface sensitive technique of optical second harmonic (SH) phase and intensity measurements is used to probe a slightly miscut natively oxidized Si(1 1 1) surface. The experiments have been performed in a spectral interval covering the E-2 resonance of silicon band structure. The phase and intensity of the SH wave measured at several azimuthal angular positions allow to separate the vicinal contributions. (C) 2001 Elsevier Science Ltd. All rights reserved."],["dc.identifier.doi","10.1016/S1369-8001(00)00112-8"],["dc.identifier.isi","000167727200013"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/30032"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Sci Ltd"],["dc.publisher.place","Oxford"],["dc.relation.conference","Spring Meeting of the European-Materials-Research-Society"],["dc.relation.eventlocation","STRASBOURG, FRANCE"],["dc.relation.issn","1369-8001"],["dc.title","Probe of the vicinal Si (111) surface by second harmonic phase spectroscopy"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","6"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","JETP Letters"],["dc.bibliographiccitation.lastpage","9"],["dc.bibliographiccitation.volume","73"],["dc.contributor.author","Dolgova, T. V."],["dc.contributor.author","Maidikovskii, A. I."],["dc.contributor.author","Martem'yanov, M. G."],["dc.contributor.author","Marovsky, G."],["dc.contributor.author","Mattei, G."],["dc.contributor.author","Schuhmacher, D."],["dc.contributor.author","Yakovlev, V. A."],["dc.contributor.author","Fedyanin, A. A."],["dc.contributor.author","Aktsipetrov, O. A."],["dc.date.accessioned","2018-11-07T09:34:33Z"],["dc.date.available","2018-11-07T09:34:33Z"],["dc.date.issued","2001"],["dc.description.abstract","The experimental spectral dependence of the intensity of the second harmonic (SH) generated in microcavities based on porous silicon photonic crystal demonstrates resonant intensity enhancement (by a factor of similar to2 x 10(2)) in the vicinity of the cavity mode and at the edges of the photonic band gap. The enhancement is due to the combined effect of pump radiation localization inside the microcavity, multiple SH interference in the photonic crystal, and two-photon resonance of the porous silicon quadratic susceptibility at the SH frequency. (C) 2001 MAIK \"Nauka/Interperiodica\"."],["dc.identifier.doi","10.1134/1.1355395"],["dc.identifier.isi","000167699600002"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/32195"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","0021-3640"],["dc.title","Giant second harmonic generation in microcavities based on porous silicon photonic crystals"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]