Pundt, Astrid

[["dc.bibliographiccitation.firstpage","479"],["dc.bibliographiccitation.journal","Journal of Alloys and Compounds"],["dc.bibliographiccitation.lastpage","483"],["dc.bibliographiccitation.volume","446"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Proeger, Till E."],["dc.contributor.author","Danis, Stanislav"],["dc.contributor.author","Cieslar, M."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T10:57:35Z"],["dc.date.available","2018-11-07T10:57:35Z"],["dc.date.issued","2007"],["dc.description.abstract","The introduction of new defects due to H-loading of Nb, their population as a function of the H concentration, and the mechanism of their formation are investigated by positron annihilation spectroscopy (PAS). In addition, X-ray diffraction (XRD), and transmission electron microscopy (TEM) are applied. Furthermore, the results obtained by the experimental techniques are compared with theoretical calculations of energetic stability and positron characteristics of various defect-H configurations. It is found that vacancies surrounded by H atoms are introduced into the specimens by H-loading. The density of these vacancy-H complexes increases with increasing concentration of H in the specimens. The H-induced vacancies are formed even in the alpha-phase field, when the metal-H system is a single phase solid solution. The stability of the H-induced defects and the mechanism of their formation are discussed. (C) 2006 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jallcom.2006.11.105"],["dc.identifier.isi","000250822900102"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50289"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","10th International Symposium on Metal-Hydrogen Systems, Fundamentals and Applications"],["dc.relation.eventlocation","Lahaina, HI"],["dc.relation.issn","0925-8388"],["dc.title","Hydrogen-induced defects in niobium"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","224106"],["dc.bibliographiccitation.issue","22"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","69"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Becvar, F."],["dc.contributor.author","Kuzel, R."],["dc.contributor.author","Cieslar, M."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T10:48:43Z"],["dc.date.available","2018-11-07T10:48:43Z"],["dc.date.issued","2004"],["dc.description.abstract","Our aim in the present work was to investigate changes of the defect structure of bulk niobium induced by hydrogen loading. The evolution of the microstructure with increasing hydrogen concentration was studied by x-ray diffraction and two complementary techniques of positron annihilation spectroscopy (PAS), namely positron lifetime spectroscopy and slow positron implantation spectroscopy with the measurement of Doppler broadening, in defect-free Nb (99.9%) and Nb containing a remarkable number of dislocations. These samples were electrochemically loaded with hydrogen up to x(H)=0.06 [H/Nb], i.e., in the alpha-phase region, and it was found that the defect density increases with hydrogen concentration in both Nb samples. This means that hydrogen-induced defects are created in the Nb samples. A comparison of PAS results with theoretical calculations revealed that vacancy-hydrogen complexes are introduced into the samples due to hydrogen loading. Most probably these are vacancies surrounded by 4 hydrogen atoms."],["dc.identifier.doi","10.1103/PhysRevB.69.224106"],["dc.identifier.isi","000222530900027"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/48260"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","2469-9969"],["dc.relation.issn","2469-9950"],["dc.title","Hydrogen-induced defects in bulk niobium"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","123"],["dc.bibliographiccitation.journal","JOURNAL OF NANO RESEARCH"],["dc.bibliographiccitation.lastpage","133"],["dc.bibliographiccitation.volume","26"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Melikhova, Oksana"],["dc.contributor.author","Vlcek, Marian"],["dc.contributor.author","Lukac, Frantisek"],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Dobron, Patrik"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Anwand, Wolfgang"],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Wagner, Stefan"],["dc.contributor.author","Uchida, Helmut"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T09:46:42Z"],["dc.date.available","2018-11-07T09:46:42Z"],["dc.date.issued","2014"],["dc.description.abstract","Hydrogen interaction with defects and structural development of Pd films with various microstructures were investigated. Nanocrystalline, polycrystalline and epitaxial Pd films were prepared and electrochemically loaded with hydrogen. Structural changes of Pd films caused by absorbed hydrogen were studied by in-situ X-ray diffraction combined with acoustic emission and measurement of electromotorical force. Development of defects during hydrogen loading was investigated by positron annihilation spectroscopy. It was found that hydrogen firstly fills open volume defects existing already in the films and subsequently it occupies also interstitial sites in Pd lattice. Absorbed hydrogen causes volume expansion, which is strongly anisotropic in thin films. This introduces high stress into the films loaded with hydrogen. Acoustic emission measurements revealed that when hydrogen-induced stress achieves a certain critical level rearrangement of misfit dislocations takes place. The stress which grows with increasing hydrogen concentration can be further released by plastic deformation and also by detachment of the film from the substrate."],["dc.identifier.doi","10.4028/www.scientific.net/JNanoR.26.123"],["dc.identifier.isi","000330816600018"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/34943"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Trans Tech Publications Ltd"],["dc.relation.issn","1661-9897"],["dc.relation.issn","1662-5250"],["dc.title","Hydrogen Interaction with Defects in Nanocrystalline, Polycrystalline and Epitaxial Pd Films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","12115"],["dc.bibliographiccitation.issue","27"],["dc.bibliographiccitation.journal","International Journal of Hydrogen Energy"],["dc.bibliographiccitation.lastpage","12125"],["dc.bibliographiccitation.volume","38"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Melikhova, Oksana"],["dc.contributor.author","Vlcek, Marian"],["dc.contributor.author","Lukac, Frantisek"],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Muecklich, Arndt"],["dc.contributor.author","Wagner, S."],["dc.contributor.author","Uchida, Helmut Takahiro"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T09:19:57Z"],["dc.date.available","2018-11-07T09:19:57Z"],["dc.date.issued","2013"],["dc.description.abstract","The development of the microstructure in nanocrystalline, polycrystalline and epitaxial Pd films loaded with hydrogen is investigated. Structural changes in Pd films loaded with hydrogen were characterized by positron annihilation spectroscopy combined with electron microscopy and X-ray diffraction. It was found that hydrogen charging causes plastic deformation which leads to an increase of the defect density in all Pd films studied. Moreover, the formation of buckles was observed in nanocrystalline and polycrystalline Pd films loaded above a certain critical hydrogen concentration. Buckling leads to detachment of the film from the substrate and this is accompanied with in-plane stress relaxation and plastic deformation of the film. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved."],["dc.identifier.doi","10.1016/j.ijhydene.2013.03.096"],["dc.identifier.isi","000324563200051"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/28761"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Pergamon-elsevier Science Ltd"],["dc.relation.issn","0360-3199"],["dc.title","Hydrogen-induced microstructural changes of Pd films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","308"],["dc.bibliographiccitation.journal","Acta Materialia"],["dc.bibliographiccitation.lastpage","323"],["dc.bibliographiccitation.volume","67"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Dobron, Patrik"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T09:41:59Z"],["dc.date.available","2018-11-07T09:41:59Z"],["dc.date.issued","2014"],["dc.description.abstract","Hydrogen-induced elastic/plastic deformation was studied in V1-xFex (x = 0.02-0.08) films with thicknesses between 10 and 400 nm and prepared at different temperatures. The combination of several in situ techniques such as X-ray diffraction, acoustic emission, electromotive force and substrate curvature techniques allows sensitive studies of defects generated in these thin films As well as conventional out-of-plane linear elastic film expansion and in-plane compressive stress increase during hydrogen absorption, the investigations uncovered new details: as soon as hydrogen predominately solved in interstitial lattice sites, discrete stress relaxation (DSR) events were detected, after which the film continued to behave in a linear elastic manner. DSRs were interpreted by uncorrelated movement of pre-existing dislocations. Particularly in the case of films deposited at higher temperatures, in-plane tensile stress was found at very small H concentrations of less than 0.005 H/V. Upon further H uptake, this turned into compressive stress. However, this stress increase differed from theoretical predictions. This behavior is explained by the generation of superabundant vacancies. Dislocation emission and plastic deformation are linked to the formation of the hydride phase in the V1-xFex films."],["dc.identifier.doi","10.1016/j.actamat.2013.12.034"],["dc.identifier.isi","000333495200026"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/33854"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Pergamon-elsevier Science Ltd"],["dc.relation.issn","1873-2453"],["dc.relation.issn","1359-6454"],["dc.title","Stress release and defect occurrence in V-1_Fe-x(x) films upon hydrogen loading: H-induced superabundant vacancies, movement and creation of dislocations"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","241"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","244"],["dc.bibliographiccitation.volume","255"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Zaludova, N."],["dc.contributor.author","Danis, Stanislav"],["dc.contributor.author","Dobron, Patrik"],["dc.contributor.author","Chmelik, F."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Muecklich, Arndt"],["dc.contributor.author","Nikitin, E."],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T11:09:48Z"],["dc.date.available","2018-11-07T11:09:48Z"],["dc.date.issued","2008"],["dc.description.abstract","Hydrogen loading of thin films introduces very high compressive stresses which grow in magnitude with increasing hydrogen concentration. When the hydrogen-induced stresses exceed a certain critical in-plane stress value, the loaded film starts to detach from the substrate. This results in the formation of buckles of various morphologies in the film layer. Defect studies of a hydrogen loaded Pd film which undergoes a buckling process are presented, using slow positron implantation spectroscopy, in situ acoustic emission, and direct observations of the film structure by transmission electron and optical microscopies. It is found that buckling of the film occurs at hydrogen concentrations x(H) >= 0.1 and causes a significant increase of the dislocation density in the film. (c) 2008 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.apsusc.2008.05.290"],["dc.identifier.isi","000259726900065"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/53087"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","11th Workshop on Slow Position Beam Techniques for Solids and Surfaces"],["dc.relation.eventlocation","Musee Sci Naturelles, Orleans, FRANCE"],["dc.relation.issn","0169-4332"],["dc.title","Hydrogen-induced buckling of Pd films studied by positron annihilation"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","515"],["dc.bibliographiccitation.journal","Acta Materialia"],["dc.bibliographiccitation.volume","122"],["dc.contributor.author","Wagner, Stefan"],["dc.contributor.author","Kramer, Thilo"],["dc.contributor.author","Uchida, Helmut"],["dc.contributor.author","Dobron, Patrik"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2022-01-25T09:58:14Z"],["dc.date.available","2022-01-25T09:58:14Z"],["dc.date.issued","2017"],["dc.identifier.doi","10.1016/j.actamat.2016.10.001"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/98625"],["dc.identifier.url","https://publications.goettingen-research-online.de/handle/2/43670"],["dc.relation.iserratumof","/handle/2/40034"],["dc.relation.issn","1359-6454"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","Corrigendum to “Mechanical stress and stress release channels in 10–350 nm palladium hydrogen thin films with different micro-structures” [Acta Mater. 114 (2016) 116–125]"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dc.type.subtype","erratum_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","60"],["dc.bibliographiccitation.lastpage","62"],["dc.bibliographiccitation.seriesnr","445/446"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Kuzel, R."],["dc.contributor.author","Becvar, F."],["dc.contributor.author","Cieslar, M."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.contributor.editor","Hyodo, Toshio"],["dc.date.accessioned","2018-11-07T10:53:09Z"],["dc.date.available","2018-11-07T10:53:09Z"],["dc.date.issued","2004"],["dc.description.abstract","Changes of the defect structure of niobium induced by hydrogen loading are presented in this work. It was found that annealing of virgin bulk Nb (99.9%) at 1000degreesC for 1h leads to a complete recovery of defects. Subsequently, the defect-free samples were step-by-step electrochemically loaded with hydrogen up to x(H) - 0.06 [H/Nb atom ratio], i.e. in the alpha-phase region, where the Nb-H system represents a single-phase solid solution. The evolution of the microstructure with increasing hydrogen concentration was studied by X-ray diffraction and two complementary techniques of positron annihilation spectroscopy (PAS), namely positron lifetime spectroscopy and slow positron implantation spectroscopy with measurement of Doppler broadening. It was found that new defects were created due to hydrogen loading. The concentration of these hydrogen-induced defects increases with increasing hydrogen concentration. A comparison of PAS results with theoretical calculations revealed that complexes consisting of a vacancy, surrounded likely by four hydrogen atoms, were introduced into the samples due to hydrogen loading."],["dc.identifier.isi","000189406800014"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/49288"],["dc.language.iso","en"],["dc.notes.status","final"],["dc.notes.submitter","Najko"],["dc.publisher","Trans Tech Publications Ltd"],["dc.publisher.place","Uetikon-Zürich"],["dc.relation.conference","13th International Conference on Positron Annihilation (ICPA-13)"],["dc.relation.crisseries","Materials Science Forum"],["dc.relation.eventend","2003-09-12"],["dc.relation.eventlocation","Kyoto, JAPAN"],["dc.relation.eventstart","2003-09-07"],["dc.relation.isbn","0-87849-936-9"],["dc.relation.ispartof","Positron annihilation"],["dc.relation.ispartofseries","Materials Science Forum; 445/446"],["dc.relation.issn","0255-5476"],["dc.title","Hydrogen-induced defects in niobium studied by positron annihilation"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","484"],["dc.bibliographiccitation.journal","Journal of Alloys and Compounds"],["dc.bibliographiccitation.lastpage","488"],["dc.bibliographiccitation.volume","446"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Danis, Stanislav"],["dc.contributor.author","Melikhova, Oksana"],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Zaludova, N."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Muecklich, Arndt"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Nikitin, E."],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T10:57:35Z"],["dc.date.available","2018-11-07T10:57:35Z"],["dc.date.issued","2007"],["dc.description.abstract","H interaction with defects in thin Nb films was investigated in this work. Thin Nb films were prepared by the cold cathode beam sputtering. First, microstructure of the as deposited films was characterized. The films sputtered at room temperature exhibit nanocrystalline grains, while those sputtered at high temperature (T=850 degrees C) are epitaxial. Subsequently, the films were step-by-step electrochemically charged with H. Development of microstructure and evolution of defect structure with increasing H concentration was investigated by slow positron implantation spectroscopy combined with X-ray diffraction. It was found that H is trapped at open-volume defects in the thin films of both kinds. The nanocrystalline films exhibit significantly extended H solubility in the alpha-phase. Formation of the hydride-phase (Nb-H) at higher H concentrations leads to introduction of new defects. These are most probably dislocation loops that are emitted by growing hydride-phase particles. (C) 2007 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jallcom.2006.12.131"],["dc.identifier.isi","000250822900103"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50290"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","10th International Symposium on Metal-Hydrogen Systems, Fundamentals and Applications"],["dc.relation.eventlocation","Lahaina, HI"],["dc.relation.issn","0925-8388"],["dc.title","Positron annihilation study of hydrogen trapping at open-volume defects: Comparison of nanocrystalline and epitaxial Nb thin films"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","3245"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","3251"],["dc.bibliographiccitation.volume","252"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Melikhova, Oksana"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Mucklich, A."],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T10:17:10Z"],["dc.date.available","2018-11-07T10:17:10Z"],["dc.date.issued","2006"],["dc.description.abstract","Thin niobium (Nb) films (thickness 350-400 nm) were prepared on (100)Si substrate in a UHV chamber using the cathode beam sputtering. The sputtering temperature T, was varied from 40 up to 500 T and the influence of the sputtering temperature on the microstructure of thin No films was investigated. Defect studies of the thin Nb films sputtered at various temperatures were performed by slow position implantation spectroscopy (SPIS) with measurement of the Doppler broadening of the annihilation line. SPIS was combined with transmission electron microscopy (TEM) and X-ray diffraction (XRD). We have found that the films sputtered at T(s) = 40 degrees C exhibit elongated, column-like nanocrystalline grains. No significant increase of grain size with T, (up to 500 T) was observed by TEM. The thin Nb films sputtered at T, = 40 degrees C contain a high density of defects. It is demonstrated by shortened positron diffusion length and a high value of the S parameter for Nb layer compared to the well-annealed (defect-free) bulk Nb reference sample. A drastic decrease of defect density was found in the films sputtered at T(s) >= 300 degrees C. It is reflected by a significant increase of the positron diffusion length and a decrease of the S parameter for the Nb layer. The defect density in the Nb layer is, however, still substantially higher than in the well-annealed reference bulk Nb sample. Moreover, there is a layer at the interface between the Nb film and the substrate with very high density of defects comparable to that in the films sputtered at T(s) < 300 degrees C. All the Nb films studied exhibit a strong (1 1 0) texture. The films sputtered at T(s) < 300 degrees C are characterized by a compressive macroscopic in-plane stress due to lattice mismatch between the film and the substrate. Relaxation of the in-plane stress was observed in the films sputtered at Ts >= 300 degrees C. The width of the XRD profiles of the films sputtered at r(s) >= 300 degrees C is significantly smaller compared to the films sputtered at lower temperatures. This is most probably due to a lower defect density which results in reduced microstrains in the films sputtered at higher temperatures. (c) 2005 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.apsusc.2005.08.083"],["dc.identifier.isi","000236021300026"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/41180"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","10th International Workshop on Slow Positron Beam Techniques for Solids and Surfaces"],["dc.relation.eventlocation","Univ Qatar, Doha, QATAR"],["dc.relation.issn","0169-4332"],["dc.title","Defects in nanocrystalline Nb films: Effect of sputtering temperature"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]