Pundt, Astrid

[["dc.bibliographiccitation.firstpage","123"],["dc.bibliographiccitation.journal","JOURNAL OF NANO RESEARCH"],["dc.bibliographiccitation.lastpage","133"],["dc.bibliographiccitation.volume","26"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Melikhova, Oksana"],["dc.contributor.author","Vlcek, Marian"],["dc.contributor.author","Lukac, Frantisek"],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Dobron, Patrik"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Anwand, Wolfgang"],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Wagner, Stefan"],["dc.contributor.author","Uchida, Helmut"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T09:46:42Z"],["dc.date.available","2018-11-07T09:46:42Z"],["dc.date.issued","2014"],["dc.description.abstract","Hydrogen interaction with defects and structural development of Pd films with various microstructures were investigated. Nanocrystalline, polycrystalline and epitaxial Pd films were prepared and electrochemically loaded with hydrogen. Structural changes of Pd films caused by absorbed hydrogen were studied by in-situ X-ray diffraction combined with acoustic emission and measurement of electromotorical force. Development of defects during hydrogen loading was investigated by positron annihilation spectroscopy. It was found that hydrogen firstly fills open volume defects existing already in the films and subsequently it occupies also interstitial sites in Pd lattice. Absorbed hydrogen causes volume expansion, which is strongly anisotropic in thin films. This introduces high stress into the films loaded with hydrogen. Acoustic emission measurements revealed that when hydrogen-induced stress achieves a certain critical level rearrangement of misfit dislocations takes place. The stress which grows with increasing hydrogen concentration can be further released by plastic deformation and also by detachment of the film from the substrate."],["dc.identifier.doi","10.4028/www.scientific.net/JNanoR.26.123"],["dc.identifier.isi","000330816600018"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/34943"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Trans Tech Publications Ltd"],["dc.relation.issn","1661-9897"],["dc.relation.issn","1662-5250"],["dc.title","Hydrogen Interaction with Defects in Nanocrystalline, Polycrystalline and Epitaxial Pd Films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","308"],["dc.bibliographiccitation.journal","Acta Materialia"],["dc.bibliographiccitation.lastpage","323"],["dc.bibliographiccitation.volume","67"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Dobron, Patrik"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T09:41:59Z"],["dc.date.available","2018-11-07T09:41:59Z"],["dc.date.issued","2014"],["dc.description.abstract","Hydrogen-induced elastic/plastic deformation was studied in V1-xFex (x = 0.02-0.08) films with thicknesses between 10 and 400 nm and prepared at different temperatures. The combination of several in situ techniques such as X-ray diffraction, acoustic emission, electromotive force and substrate curvature techniques allows sensitive studies of defects generated in these thin films As well as conventional out-of-plane linear elastic film expansion and in-plane compressive stress increase during hydrogen absorption, the investigations uncovered new details: as soon as hydrogen predominately solved in interstitial lattice sites, discrete stress relaxation (DSR) events were detected, after which the film continued to behave in a linear elastic manner. DSRs were interpreted by uncorrelated movement of pre-existing dislocations. Particularly in the case of films deposited at higher temperatures, in-plane tensile stress was found at very small H concentrations of less than 0.005 H/V. Upon further H uptake, this turned into compressive stress. However, this stress increase differed from theoretical predictions. This behavior is explained by the generation of superabundant vacancies. Dislocation emission and plastic deformation are linked to the formation of the hydride phase in the V1-xFex films."],["dc.identifier.doi","10.1016/j.actamat.2013.12.034"],["dc.identifier.isi","000333495200026"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/33854"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Pergamon-elsevier Science Ltd"],["dc.relation.issn","1873-2453"],["dc.relation.issn","1359-6454"],["dc.title","Stress release and defect occurrence in V-1_Fe-x(x) films upon hydrogen loading: H-induced superabundant vacancies, movement and creation of dislocations"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","241"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","244"],["dc.bibliographiccitation.volume","255"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Zaludova, N."],["dc.contributor.author","Danis, Stanislav"],["dc.contributor.author","Dobron, Patrik"],["dc.contributor.author","Chmelik, F."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Muecklich, Arndt"],["dc.contributor.author","Nikitin, E."],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T11:09:48Z"],["dc.date.available","2018-11-07T11:09:48Z"],["dc.date.issued","2008"],["dc.description.abstract","Hydrogen loading of thin films introduces very high compressive stresses which grow in magnitude with increasing hydrogen concentration. When the hydrogen-induced stresses exceed a certain critical in-plane stress value, the loaded film starts to detach from the substrate. This results in the formation of buckles of various morphologies in the film layer. Defect studies of a hydrogen loaded Pd film which undergoes a buckling process are presented, using slow positron implantation spectroscopy, in situ acoustic emission, and direct observations of the film structure by transmission electron and optical microscopies. It is found that buckling of the film occurs at hydrogen concentrations x(H) >= 0.1 and causes a significant increase of the dislocation density in the film. (c) 2008 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.apsusc.2008.05.290"],["dc.identifier.isi","000259726900065"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/53087"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","11th Workshop on Slow Position Beam Techniques for Solids and Surfaces"],["dc.relation.eventlocation","Musee Sci Naturelles, Orleans, FRANCE"],["dc.relation.issn","0169-4332"],["dc.title","Hydrogen-induced buckling of Pd films studied by positron annihilation"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","S872"],["dc.bibliographiccitation.journal","Journal of Alloys and Compounds"],["dc.bibliographiccitation.lastpage","S876"],["dc.bibliographiccitation.volume","509"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Al-Kassab, Talaat"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T08:52:06Z"],["dc.date.available","2018-11-07T08:52:06Z"],["dc.date.issued","2011"],["dc.description.abstract","V-Fe5at.% 2 and 10-nm thick single layered films were prepared by ion beam sputtering on W substrate. They were loaded with D from gas phase at 0.2 Pa and at 1 Pa, respectively. Both lateral and depth D distribution of these films was investigated in detail by atom probe tomography. The results of analysis are in good agreement between the average deuterium concentration and the value, expected from electromotive force measurement on a similar flat film. An enrichment of deuterium at the V/W interface was observed for both films. The origin of this D-accumulation was discussed in respect to electron transfer, mechanical stress and misfit dislocations. (C) 2010 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jallcom.2010.11.122"],["dc.identifier.isi","000295695500081"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/22090"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","12th International Symposium on Metal-Hydrogen Systems, Fundamentals and Applications (MH2010)"],["dc.relation.eventend","2010-07-23"],["dc.relation.eventlocation","Moscow, Russia"],["dc.relation.eventstart","2010-07-19"],["dc.relation.issn","0925-8388"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","Analysis of deuterium in V-Fe5at.% film by atom probe tomography (APT)"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","903"],["dc.bibliographiccitation.issue","11"],["dc.bibliographiccitation.journal","Scripta Materialia"],["dc.bibliographiccitation.lastpage","906"],["dc.bibliographiccitation.volume","67"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Al-Kassab, Talaat"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T09:03:08Z"],["dc.date.available","2018-11-07T09:03:08Z"],["dc.date.issued","2012"],["dc.description.abstract","The first direct observation, by atom probe tomography, of a deuterium dead layer is reported for Fe/V multilayered film loaded with D solute atoms. The thickness of the dead layers was measured to be 0.4-0.5 nm. The dead layers could be distinguished from chemically intermixed layers. The results suggest that the dead layer effect occurs even near the interface of the mixing layers, supporting an interpretation that the dead layer effect cannot be explained solely by electronic charge transfer but also involves a modulation of rigidity. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved."],["dc.identifier.doi","10.1016/j.scriptamat.2012.08.025"],["dc.identifier.isi","000310390000009"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/24840"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Pergamon-elsevier Science Ltd"],["dc.relation.issn","1359-6462"],["dc.title","Visualization of deuterium dead layer by atom probe tomography"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","484"],["dc.bibliographiccitation.journal","Journal of Alloys and Compounds"],["dc.bibliographiccitation.lastpage","488"],["dc.bibliographiccitation.volume","446"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Danis, Stanislav"],["dc.contributor.author","Melikhova, Oksana"],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Zaludova, N."],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Muecklich, Arndt"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Nikitin, E."],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T10:57:35Z"],["dc.date.available","2018-11-07T10:57:35Z"],["dc.date.issued","2007"],["dc.description.abstract","H interaction with defects in thin Nb films was investigated in this work. Thin Nb films were prepared by the cold cathode beam sputtering. First, microstructure of the as deposited films was characterized. The films sputtered at room temperature exhibit nanocrystalline grains, while those sputtered at high temperature (T=850 degrees C) are epitaxial. Subsequently, the films were step-by-step electrochemically charged with H. Development of microstructure and evolution of defect structure with increasing H concentration was investigated by slow positron implantation spectroscopy combined with X-ray diffraction. It was found that H is trapped at open-volume defects in the thin films of both kinds. The nanocrystalline films exhibit significantly extended H solubility in the alpha-phase. Formation of the hydride-phase (Nb-H) at higher H concentrations leads to introduction of new defects. These are most probably dislocation loops that are emitted by growing hydride-phase particles. (C) 2007 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jallcom.2006.12.131"],["dc.identifier.isi","000250822900103"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50290"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","10th International Symposium on Metal-Hydrogen Systems, Fundamentals and Applications"],["dc.relation.eventlocation","Lahaina, HI"],["dc.relation.issn","0925-8388"],["dc.title","Positron annihilation study of hydrogen trapping at open-volume defects: Comparison of nanocrystalline and epitaxial Nb thin films"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","534"],["dc.bibliographiccitation.journal","Journal of Alloys and Compounds"],["dc.bibliographiccitation.lastpage","538"],["dc.bibliographiccitation.volume","446"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Al-Kassab, Talaat"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T10:57:36Z"],["dc.date.available","2018-11-07T10:57:36Z"],["dc.date.issued","2007"],["dc.description.abstract","Hydride formation of V-Fe8 at% films with different microstructures was investigated by measuring the electromotoric force (EMF), in-plane stress and, additionally, the local chemistry by performing tomographic atom probe (TAP). The phase boundaries of the films were found to be microstructure dependent: the alpha-phase solubility limit was found to be c(H,alpha) = 0.1 H/V and c(H,beta) = 0.45 +/- 0.02 H/V for films with small-domain size, and c(H,alpha) = 0.1 H/V and c(H,beta) = 0.6 +/- 0.02 H/V for films with large domain size. Stress release also depends on the microstructure; it is more efficient for small-domain samples resulting in smaller total stress. It is shown that the plateau pressure and the plateau slope of the films increase with hydrogen-induced in-plane compressive stress increase. TAP analysis at about 20 K monitors the occurrence of a plate-like hydride VD0.65-precipitate at the V/Pd interface. The detected concentrations are in good agreement with those expected at low temperatures. (C) 2007 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jallcom.2007.01.099"],["dc.identifier.isi","000250822900114"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50291"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","10th International Symposium on Metal-Hydrogen Systems, Fundamentals and Applications"],["dc.relation.eventend","2006-10-06"],["dc.relation.eventlocation","Lahaina, USA"],["dc.relation.eventstart","2006-10-01"],["dc.relation.issn","0925-8388"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","Studies on hydrogen loaded V-Fe8 at% films on Al2O3 substrate"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","053508"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.volume","103"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Zaludova, N."],["dc.contributor.author","Vlach, Martin"],["dc.contributor.author","Danis, Stanislav"],["dc.contributor.author","Kuriplach, J."],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, W."],["dc.contributor.author","Grambole, Dieter"],["dc.contributor.author","Skorupa, W."],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2018-11-07T11:17:45Z"],["dc.date.available","2018-11-07T11:17:45Z"],["dc.date.issued","2008"],["dc.description.abstract","Various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. The hydrogen content in the crystals is determined by nuclear reaction analysis and it is found that already 0.3 at. % H exists in chemically bound form in the virgin ZnO crystals. A single positron lifetime of 182 ps is detected in the virgin crystals and attributed to saturated positron trapping at Zn vacancies surrounded by hydrogen atoms. It is demonstrated that a very high amount of hydrogen (up to similar to 30 at. %) can be introduced into the crystals by electrochemical doping. More than half of this amount is chemically bound, i.e., incorporated into the ZnO crystal lattice. This drastic increase of the hydrogen concentration is of marginal impact on the measured positron lifetime, whereas a contribution of positrons annihilated by electrons belonging to O-H bonds formed in the hydrogen doped crystal is found in coincidence Doppler broadening spectra. The formation of hexagonal shape pyramids on the surface of the hydrogen doped crystals by optical microscopy is observed and discussed. (c) 2008 American Institute of Physics."],["dc.identifier.doi","10.1063/1.2844479"],["dc.identifier.isi","000254025000028"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/54884"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","0021-8979"],["dc.title","Defect studies of ZnO single crystals electrochemically doped with hydrogen"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","054108"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","79"],["dc.contributor.author","Cizek, Jakub"],["dc.contributor.author","Prochazka, Ivan"],["dc.contributor.author","Danis, Stanislav"],["dc.contributor.author","Brauer, Gerhard"],["dc.contributor.author","Anwand, Wolfgang"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Nikitin, Eugen"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Pundt, Astrid"],["dc.contributor.author","Islamgaliev, Rinat K."],["dc.date.accessioned","2018-11-07T08:33:17Z"],["dc.date.available","2018-11-07T08:33:17Z"],["dc.date.issued","2009"],["dc.description.abstract","The aim of the present work was to investigate the microstructure of bulk niobium irradiated by 10 MeV electrons. Positron-annihilation spectroscopy was employed as a principal technique for the characterization of irradiation-induced defects. Experimental results were compared to first-principles theoretical calculations of positron characteristics. In addition to extended positron-annihilation studies, the specimens were characterized also by x-ray diffraction. It was found that irradiation-induced vacancies are surrounded by hydrogen. Complexes consisting of a Nb vacancy surrounded by one and two H atoms were identified in the irradiated specimens. The concentration of these vacancy-hydrogen complexes was estimated to be (18-24)x10(-5) at. %. Vacancy-2H complexes are found to represent the dominating type of defects. Hydrogen atoms surrounding a Nb vacancy cause a shortening of the lifetime of trapped positrons. Moreover, it was demonstrated that hydrogen attached to Nb vacancy can be identified by coincidence Doppler broadening technique. The effect of a thin Pd (or Cr) overlayer on the irradiation-induced defects was investigated also. It was found that the relative fraction of vacancy-2H complexes is higher in the specimens irradiated with such an overlayer."],["dc.identifier.doi","10.1103/PhysRevB.79.054108"],["dc.identifier.isi","000263815400027"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/17538"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Hydrogen-vacancy complexes in electron-irradiated niobium"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","1660"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","Thin Solid Films"],["dc.bibliographiccitation.lastpage","1667"],["dc.bibliographiccitation.volume","520"],["dc.contributor.author","Wilke, Marcus"],["dc.contributor.author","Teichert, Gerd"],["dc.contributor.author","Gemma, Ryota"],["dc.contributor.author","Pundt, Astrid"],["dc.contributor.author","Kirchheim, Reiner"],["dc.contributor.author","Romanus, Henry"],["dc.contributor.author","Schaaf, Peter"],["dc.date.accessioned","2018-11-07T08:48:44Z"],["dc.date.available","2018-11-07T08:48:44Z"],["dc.date.issued","2011"],["dc.description.abstract","In the last years, glow discharge optical emission spectrometry (GDOES) gained more and more acceptance in the analysis of functional coatings. GDOES thereby represents an interesting alternative to common depth profiling techniques like AES and SIMS, based on its unique combination of high erosion rates and erosion depths, sensitivity, analysis of nonconductive layers and easy quantification even for light elements such as C, N, O and H. Starting with the fundamentals of GDOES, a short overview on new developments in instrument design for accurate and well resolved thin film analyses is presented. The article focuses on the analytical capabilities of glow discharge optical emission spectrometry in the analysis of metallic coatings and thin films. Results illustrating the high depth resolution, confirmation of stoichiometry, the detection of light elements in coatings as well as contamination on the surface or interfaces will be demonstrated by measurements of: a multilayer system Cr/Ti on silicon, interface contamination on silicon during deposition of aluminum, Al(2)O(3)-nanoparticle containing conversion coatings on zinc for corrosion resistance, Ti(3)SiC(2) MAX-phase coatings by pulsed laser deposition and hydrogen detection in a V/Fe multilayer system. The selected examples illustrate that GDOES can be successfully adopted as an analytical tool in the development of new materials and coatings. A discussion of the results as well as of the limitations of GDOES is presented. (C) 2011 Elsevier B. V. All rights reserved."],["dc.identifier.doi","10.1016/j.tsf.2011.07.058"],["dc.identifier.isi","000299233000055"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/21295"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.relation.issn","0040-6090"],["dc.title","Glow discharge optical emission spectroscopy for accurate and well resolved analysis of coatings and thin films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]