Now showing 1 - 10 of 22
  • 2012Journal Article
    [["dc.bibliographiccitation.firstpage","1176"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","Optical Materials Express"],["dc.bibliographiccitation.lastpage","1185"],["dc.bibliographiccitation.volume","2"],["dc.contributor.author","Gruber, John B."],["dc.contributor.author","Burdick, Gary W."],["dc.contributor.author","Vetter, Ulrich"],["dc.contributor.author","Mitchell, Brandon"],["dc.contributor.author","Dierolf, Volkmar"],["dc.contributor.author","Hofsäss, Hans"],["dc.date.accessioned","2012-08-09T12:54:24Z"],["dc.date.accessioned","2021-10-11T11:26:10Z"],["dc.date.available","2012-08-09T12:54:24Z"],["dc.date.available","2021-10-11T11:26:10Z"],["dc.date.issued","2012"],["dc.description.abstract","The crystal-field and Zeeman splittings of the energy levels of Nd3+(4f3) 2S+1LJ in hexagonal phase AlN have been investigated. The multiplet manifolds of Nd3+(4f3) analyzed include the ground state, 4I9/2, and excited states 4I11/2, 4I13/2, 4F3/2, 4F5/2, 2H(2)9/2, 4F7/2, 4S3/2, 4G5/2, and 2G7/2. Experimental energy levels were obtained from analyses of the 12 K cathodoluminescence spectra from Nd3+-implanted films of AlN, and from the 15 K photoluminescence excitation spectra and the site-selective combined excitation-emission spectra (CEES) recently reported for in situ Nd-doped hexagonal AlN grown by plasma-assisted molecular beam epitaxy (PA-MBE). CEES results identify a main site and two minority sites for Nd3+ in both samples. Transition line strengths attributed to the ion in minority sites are relatively stronger in Nd:AlN than in Nd:GaN. The 15 K experimental Zeeman splitting of Nd3+ are analyzed in the PA-MBE grown AlN samples and compared with the Zeeman splitting observed in Nd:GaN. The crystal-field and Zeeman splittings were modeled using a parametrized Hamiltonian consisting of atomic and crystal-field terms. We considered possible site distortion due to the size of the implanted Nd ion that would reduce the site symmetry from C3v to C3 or C1h. However, no significant improvement was obtained using these lower symmetry models, leading us to conclude that C3v symmetry is a reasonable approximation for the main site Nd3+ ions in AlN."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2012"],["dc.identifier.doi","10.1364/OME.2.001176"],["dc.identifier.isi","000308598300001"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/7850"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/90544"],["dc.language.iso","en"],["dc.notes.intern","Migrated from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Optical Soc Amer"],["dc.relation.issn","2159-3930"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.access","openAccess"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.subject","Atomic and molecular physics : Zeeman effect; Physical optics : Luminescence; Physical optics : Stark effect"],["dc.title","Crystal field and Zeeman splittings for energy levels of Nd3+ in hexagonal AlN"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2013Journal Article
    [["dc.bibliographiccitation.firstpage","653"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Applied Physics A"],["dc.bibliographiccitation.lastpage","664"],["dc.bibliographiccitation.volume","111"],["dc.contributor.author","Hofsaess, H."],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Pape, A."],["dc.contributor.author","Bobes, Omar"],["dc.contributor.author","Broetzmann, Marc"],["dc.date.accessioned","2018-11-07T09:25:02Z"],["dc.date.available","2018-11-07T09:25:02Z"],["dc.date.issued","2013"],["dc.description.abstract","We investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of different metallic co-deposited surfactant atoms. The co-deposition of small amounts of metallic atoms, in particular Fe and Mo, is known to have a tremendous impact on the evolution of nanoscale surface patterns on Si. In previous work on ion erosion of Si during co-deposition of Fe atoms, we proposed that chemical interactions between Fe and Si atoms of the steady-state mixed FexSi surface layer formed during ion beam erosion is a dominant driving force for self-organized pattern formation. In particular, we provided experimental evidence for the formation of amorphous iron disilicide. To confirm and generalize such chemical effects on the pattern formation, in particular the tendency for phase separation, we have now irradiated Si surfaces with normal incidence 5 keV Xe ions under simultaneous gracing incidence co-deposition of Fe, Ni, Cu, Mo, W, Pt, and Au surfactant atoms. The selected metals in the two groups (Fe, Ni, Cu) and (W, Pt, Au) are very similar regarding their collision cascade behavior, but strongly differ regarding their tendency to silicide formation. We find pronounced ripple pattern formation only for those co deposited metals (Fe, Mo, Ni, W, and Pt), which are prone to the formation of mono and disilicides. In contrast, for Cu and Au co-deposition the surface remains very flat, even after irradiation at high ion fluence. Because of the very different behavior of Cu compared to Fe, Ni and Au compared to W, Pt, phase separation toward amorphous metal silicide phases is seen as the relevant pro-cess for the pattern formation on Si in the case of Fe, Mo, Ni, W, and Pt co-deposition."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [HO1125/20-1,2]"],["dc.identifier.doi","10.1007/s00339-012-7285-8"],["dc.identifier.fs","596144"],["dc.identifier.isi","000319064800046"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/10293"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29976"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.relation.issn","0947-8396"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.title","The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2008Journal Article
    [["dc.bibliographiccitation.firstpage","131"],["dc.bibliographiccitation.issue","1-3"],["dc.bibliographiccitation.journal","HYPERFINE INTERACTIONS"],["dc.bibliographiccitation.lastpage","139"],["dc.bibliographiccitation.volume","181"],["dc.contributor.author","Roeder, J."],["dc.contributor.author","Herden, C."],["dc.contributor.author","Gardner, J. A."],["dc.contributor.author","Becker, K. D."],["dc.contributor.author","Uhrmacher, Michael"],["dc.contributor.author","Hofsaess, H."],["dc.date.accessioned","2018-11-07T11:20:03Z"],["dc.date.available","2018-11-07T11:20:03Z"],["dc.date.issued","2008"],["dc.description.abstract","In conventional perturbed angular correlation (PAC)-spectroscopy huge amounts of events are processed by fast electronics. Modern digital signal processing devices and the improvement in the computer technology in recent years allow today digital PAC-spectrometer setups capable to perform software-based data processing with all the benefits of storage, repeatable data analysis under different limits, and easy switching between different isotopes. In this paper we discuss experiences and concepts of a first realized digital PAC-spectrometer, which will be rebuild at ISOLDE/CERN/Geneva."],["dc.description.sponsorship","DFG [SPP 1136]"],["dc.identifier.doi","10.1007/s10751-008-9704-y"],["dc.identifier.isi","000260281100019"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?goescholar/3586"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/55440"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.relation.issn","0304-3843"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.access","openAccess"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.subject.ddc","530"],["dc.title","Actual concepts of digital PAC-spectroscopy"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2007Journal Article
    [["dc.bibliographiccitation.firstpage","23"],["dc.bibliographiccitation.issue","1-3"],["dc.bibliographiccitation.journal","Hyperfine Interactions"],["dc.bibliographiccitation.lastpage","30"],["dc.bibliographiccitation.volume","178"],["dc.contributor.author","Juergens, Daniel"],["dc.contributor.author","Uhrmacher, Michael"],["dc.contributor.author","Hofsaess, H."],["dc.contributor.author","Roeder, J."],["dc.contributor.author","Wodniecki, P."],["dc.contributor.author","Kulinska, A."],["dc.contributor.author","Barsoum, M."],["dc.date.accessioned","2018-11-07T11:01:01Z"],["dc.date.available","2018-11-07T11:01:01Z"],["dc.date.issued","2007"],["dc.description.abstract","MAX-phases are hexagonal ternary carbides and nitrides with the general formula: M(n+1) AX (n) and n = 1 to 3. (111)In was implanted into the two MAX compounds Ti(2)InC and Zr(2)InC. Based on the general knowledge of previous (111)In implantations one expects to find the probes on the indium lattice-site in these compounds. First experiments on the annealing behaviour and the thermal stability of the indium-containing MAX-phases are reported. The observed EFGs are interpreted and first PAC-measurements under compressive stress are shown."],["dc.description.sponsorship","BMBF [05KK7MG1]"],["dc.identifier.doi","10.1007/s10751-008-9651-7"],["dc.identifier.isi","000260280700005"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?goescholar/3584"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/51058"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.relation.issn","0304-3843"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.access","openAccess"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.subject.ddc","530"],["dc.title","First PAC experiments in MAX-phases"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2020Journal Article
    [["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Scientific Reports"],["dc.bibliographiccitation.volume","10"],["dc.contributor.author","Mahata, Manoj Kumar"],["dc.contributor.author","Koppe, Tristan"],["dc.contributor.author","Kumar, Kaushal"],["dc.contributor.author","Hofsäss, Hans"],["dc.contributor.author","Vetter, Ulrich"],["dc.date.accessioned","2021-04-14T08:25:46Z"],["dc.date.available","2021-04-14T08:25:46Z"],["dc.date.issued","2020"],["dc.description.sponsorship","Open-Access-Publikationsfonds 2020"],["dc.identifier.doi","10.1038/s41598-020-65149-z"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/17462"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/81727"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-399"],["dc.notes.intern","Merged from goescholar"],["dc.relation.eissn","2045-2322"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 4.0"],["dc.rights.uri","http://creativecommons.org/licenses/by/4.0/"],["dc.title","Upconversion photoluminescence of Ho3+-Yb3+ doped barium titanate nanocrystallites: Optical tools for structural phase detection and temperature probing"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2016Journal Article
    [["dc.bibliographiccitation.artnumber","36342"],["dc.bibliographiccitation.journal","Scientific Reports"],["dc.bibliographiccitation.volume","6"],["dc.contributor.author","Mahata, Manoj Kumar"],["dc.contributor.author","Koppe, Tristan"],["dc.contributor.author","Kumar, Kaushal"],["dc.contributor.author","Hofsaess, Hans"],["dc.contributor.author","Vetter, Ulrich"],["dc.date.accessioned","2018-11-07T10:05:55Z"],["dc.date.available","2018-11-07T10:05:55Z"],["dc.date.issued","2016"],["dc.description.abstract","A dual mode rare-earth based vanadate material (YVO4: Ho3+/Yb3+), prepared through ethylene glycol assisted hydrothermal method, demonstrating both downconversion and upconversion, along with systematic investigation of the luminescence spectroscopy within 12-300 K is presented herein. The energy transfer processes have been explored via steady-state and time-resolved spectroscopic measurements and explained in terms of rate equation description and temporal evolution below room temperature. The maximum time for energy migration from host to rare earth (Ho3+) increases (0.157 mu s to 0.514 mu s) with the material's temperature decreasing from 300 K to 12 K. The mechanism responsible for variation of the transients' character is discussed through thermalization and non-radiative transitions in the system. More significantly, the temperature of the nanocrystals was determined using not only the thermally equilibrated radiative intra-4f transitions of Ho3+ but also the decay time and rise time of vanadate and Ho3+ energy levels. Our studies show that the material is highly suitable for temperature sensing below room temperature. The maximum relative sensor sensitivity using the rise time of Ho3+ energy level (F-5(4)/S-5(2)) is 1.35% K-1, which is the highest among the known sensitivities for luminescence based thermal probes."],["dc.description.sponsorship","European Commission; Department of Science and Technology, New Delhi"],["dc.identifier.doi","10.1038/srep36342"],["dc.identifier.isi","000386761900001"],["dc.identifier.pmid","27805060"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/13953"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/38998"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Nature Publishing Group"],["dc.relation.issn","2045-2322"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 4.0"],["dc.title","Demonstration of Temperature Dependent Energy Migration in Dual-Mode YVO4: Ho3+/Yb3+ Nanocrystals for Low Temperature Thermometry"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2012Journal Article
    [["dc.bibliographiccitation.firstpage","1186"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","Optical Materials Express"],["dc.bibliographiccitation.lastpage","1202"],["dc.bibliographiccitation.volume","2"],["dc.contributor.author","Gruber, John B."],["dc.contributor.author","Vetter, Ulrich"],["dc.contributor.author","Burdick, Gary W."],["dc.contributor.author","Fleischman, Zackery D."],["dc.contributor.author","Merkle, Larry D."],["dc.contributor.author","Taniguchi, Takashi"],["dc.contributor.author","Xiaoli, Yuan"],["dc.contributor.author","Sekiguchi, Takashi"],["dc.contributor.author","Jürgens, Daniel"],["dc.contributor.author","Hofsäss, Hans"],["dc.date.accessioned","2014-01-10T15:19:52Z"],["dc.date.accessioned","2014-01-30T20:42:37Z"],["dc.date.accessioned","2021-10-11T11:36:51Z"],["dc.date.available","2014-01-10T15:19:52Z"],["dc.date.available","2014-01-30T20:42:37Z"],["dc.date.available","2021-10-11T11:36:51Z"],["dc.date.issued","2012"],["dc.description.abstract","The 12 K cathodoluminescence spectra of Er3+ doped into single crystals of aluminum nitride (2H-AlN) in the hexagonal phase are reported between 320 nm and 775 nm. The emission spectra represent transitions from the lower Stark level of 2P3/2 to the Stark levels of the 4I15/2, 4I13/2, 4I11/2, 4I9/2, 4F9/2, and 4S3/2 multiplet manifolds of Er3+(4f11). Emission spectra from 4S3/2 to 4I15/2 are also reported. All observed strong line emission are accounted for in terms of two principle sites, denoted site “a” and site “b”, with a few line spectra attributed to additional sites. A parameterized Hamiltonian that includes the atomic and crystal-field terms for Er3+(4f11)2S+1LJ was used to determine the symmetry and the crystal field splitting of the “a” and “b” sites. A descent in symmetry calculation was carried out to determine if distortion due to the size difference between Er, Al and the vacancies can be discerned. Modeling results assuming C3v and C1h are discussed. It appears that the sensitivity to a C1h model is not sufficient to invalidate the choice of C3v as an approximate symmetry for both sites. The g-factors reported from an EPR study of Er3+ in single-crystal AlN are in reasonable agreement with calculated g-factors for Er3+ in the “a” site assuming C3v symmetry."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2012"],["dc.identifier.citation","Gruber, John B.; Vetter, Ulrich; Burdick, Gary W.; Fleischman, Zackery D.; Merkle, Larry D.; Taniguchi, Takashi; Xiaoli, Yuan; Sekiguchi, Takashi; Jürgens, Daniel; Hofsäss, Hans (2012): Analysis of the spectra of trivalent erbium in multiple sites of hexagonal aluminum nitride"],["dc.identifier.doi","10.1364/OME.2.001186"],["dc.identifier.fs","596351"],["dc.identifier.isi","000308598300002"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/9564"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/90811"],["dc.language.iso","en"],["dc.notes.intern","Migrated from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Optical Soc Amer"],["dc.relation.issn","2159-3930"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.access","openAccess"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.subject","trivalent erbium; hexagonal aluminum nitride"],["dc.title","Analysis of the spectra of trivalent erbium in multiple sites of hexagonal aluminum nitride"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2013Journal Article Research Paper
    [["dc.bibliographiccitation.firstpage","431"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Applied Physics A"],["dc.bibliographiccitation.lastpage","437"],["dc.bibliographiccitation.volume","111"],["dc.contributor.author","Eberl, Christian"],["dc.contributor.author","Liese, Tobias"],["dc.contributor.author","Schlenkrich, Felix"],["dc.contributor.author","Doering, Florian"],["dc.contributor.author","Hofsaess, Hans C."],["dc.contributor.author","Krebs, Hans-Ulrich"],["dc.date.accessioned","2018-11-07T09:25:02Z"],["dc.date.available","2018-11-07T09:25:02Z"],["dc.date.issued","2013"],["dc.description.abstract","During growth of multilayers by pulsed laser deposition (PLD), often both intermixing and resputtering occur due to the high kinetic energy of the particles transferred from the target to the substrate surface. In order to obtain a fundamental understanding of the underlying processes, W/Si multilayers have been studied by the complementary methods of transmission electron microscopy (TEM), X-ray reflectivity (XRR) and in-situ rate monitoring. For the experiments, deposition conditions were chosen that result in high energetic Si ions and mainly low energetic W atoms for the multilayer growth. Under these conditions, interface mixing of up to 3 nm occurs at the W/Si interfaces, while the Si/W interfaces remain sharp. Furthermore, enhanced resputtering of Si leads to a Si thickness deficit of up to 2 nm at the W/Si interfaces. The presented results can be understood by a combination of theoretical calculations as well as SRIM and TRIDYN simulations, which match perfectly to the experimentally obtained intermixing and enhanced resputtering of Si at the W/Si interfaces."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SFB 755, SFB 602]"],["dc.identifier.doi","10.1007/s00339-013-7587-5"],["dc.identifier.fs","600423"],["dc.identifier.isi","000319064800013"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/10294"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29975"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.relation.issn","0947-8396"],["dc.relation.orgunit","Fakultät für Physik"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.title","Enhanced resputtering and asymmetric interface mixing in W/Si multilayers"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2018Journal Article
    [["dc.bibliographiccitation.artnumber","025205"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","AIP Advances"],["dc.bibliographiccitation.volume","8"],["dc.contributor.author","Bobes, Omar"],["dc.contributor.author","Hofsäss, Hans"],["dc.contributor.author","Zhang, Kun"],["dc.date.accessioned","2019-07-09T11:45:09Z"],["dc.date.available","2019-07-09T11:45:09Z"],["dc.date.issued","2018"],["dc.description.abstract","We investigate the ripple pattern formation on amorphous carbon surfaces at room temperature during low energy Ne ion irradiation as a function of the ion incidence angle. Monte Carlo simulations of the curvature coefficients applied to the Bradley-Harper and Cater-Vishnyakov models, including the recent extensions by Harrison-Bradley and Hofsäss predict that pattern formation on amorphous carbon thin films should be possible for low energy Ne ions from 250 eV up to 1500 eV. Moreover, simulations are able to explain the absence of pattern formation in certain cases. Our experimental results are compared with prediction using current linear theoretical models and applying the crater function formalism, as well as Monte Carlo simulations to calculate curvature coefficients using the SDTrimSP program. Calculations indicate that no patterns should be generated up to 45° incidence angle if the dynamic behavior of the thickness of the ion irradiated layer introduced by Hofsäss is taken into account, while pattern formation most pronounced from 50° for ion energy between 250 eV and 1500 eV, which are in good agreement with our experimental data."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2018"],["dc.identifier.doi","10.1063/1.5018166"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/15046"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/59170"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.relation.issn","2158-3226"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 4.0"],["dc.subject.ddc","530"],["dc.title","Neon ion beam induced pattern formation on amorphous carbon surfaces"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]
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  • 2014Journal Article
    [["dc.bibliographiccitation.artnumber","085301"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","Nanotechnology"],["dc.bibliographiccitation.volume","25"],["dc.contributor.affiliation","Zhang, K;"],["dc.contributor.affiliation","Bobes, O;"],["dc.contributor.affiliation","Hofsäss, H;"],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Bobes, Omar"],["dc.contributor.author","Hofsaess, H."],["dc.date.accessioned","2018-11-07T09:43:35Z"],["dc.date.available","2018-11-07T09:43:35Z"],["dc.date.issued","2014"],["dc.date.updated","2022-02-09T13:18:39Z"],["dc.description.abstract","Dot and ripple nanopatterns on Si surfaces with defined symmetry and characteristic dot spacings of 50-70 nm were created by 1 keV Ar ion irradiation at normal incidence and simultaneous co-deposition of Fe atoms at grazing incidence. Fe was continuously supplied from different sputter targets surrounding the Si substrate, leading to a steady-state Fe content in the near-surface region of the substrates. The pattern formation is self-organized, most probably caused by ion-induced phase separation. Patterns were analyzed with atomic force microscopy and the Fe content in the irradiated layer was measured with Rutherford backscattering. The symmetries of the produced patterns are isotropic, four-fold symmetric, three-fold symmetric and various types of two-fold symmetric patterns, depending on the geometrical arrangement of the sputter targets. Pattern formation was studied for a steady-state coverage of Fe between 0.5 and 3.3 x 10(15) Fe cm(-2). The threshold coverage for the onset of pattern formation is about 0.5-1 x 10(15) Fe cm(-2). The coherence length of the patterns is comparable to the average dot spacing. Nevertheless, the autocorrelation analysis reveals a residual long-range periodicity of some patterns. The dot spacing can be adjusted between about 20 nm and several hundred nm depending on the ion species and ion energy."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [HO1125/20-1,2]"],["dc.identifier.doi","10.1088/0957-4484/25/8/085301"],["dc.identifier.eissn","1361-6528"],["dc.identifier.isi","000331571700004"],["dc.identifier.issn","0957-4484"],["dc.identifier.pmid","24492328"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/34214"],["dc.language.iso","en"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","IOP Publishing"],["dc.relation.issn","1361-6528"],["dc.relation.issn","0957-4484"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Designing self-organized nanopatterns on Si by ion irradiation and metal co-deposition"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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