Malindretos, Jörg

[["dc.bibliographiccitation.artnumber","104424"],["dc.bibliographiccitation.issue","10"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","84"],["dc.contributor.author","Bedoya-Pinto, A."],["dc.contributor.author","Zube, Christina"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T08:51:44Z"],["dc.date.available","2018-11-07T08:51:44Z"],["dc.date.issued","2011"],["dc.description.abstract","Structural, magnetic, and electrical transport properties of delta-MnxGa1-x epitaxial layers are investigated for alloy compositions in the range of x = 0.49 ... 0.67. All samples were grown by molecular beam epitaxy on GaN(0001) layers and exhibit a high-quality interface. The room-temperature saturation magnetization and the coercive field change markedly with alloy composition. An analysis of the electrical transport properties reveals that the lattice and magnon scattering contributions to the longitudinal resistivity as well as the scaling behavior of rho(AHE) also depend noticeably on the composition of the delta-MnGa layer. The possibility to grow delta-MnGa epitaxially on GaN(0001) over a wide range of Mn compositions and a detailed knowledge of the related physical properties are a prerequisite for the integration of this ferromagnetic alloy in wide-gap semiconductor spintronics."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SFB 602]"],["dc.identifier.doi","10.1103/PhysRevB.84.104424"],["dc.identifier.isi","000294922100003"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/22007"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Epitaxial delta-MnxGa1-x layers on GaN(0001): Structural, magnetic, and electrical transport properties"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","019501"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","16"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Klein-Wiele, J-H"],["dc.contributor.author","Simon, P."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:45:03Z"],["dc.date.available","2018-11-07T09:45:03Z"],["dc.date.issued","2014"],["dc.identifier.doi","10.1088/1367-2630/16/1/019501"],["dc.identifier.isi","000330627200001"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/34532"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Iop Publishing Ltd"],["dc.relation.issn","1367-2630"],["dc.title","Ga-polar GaN nanocolumn arrays with semipolar faceted tips (vol 15, 053045, 2013)"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","305301"],["dc.bibliographiccitation.issue","30"],["dc.bibliographiccitation.journal","Journal of Physics D Applied Physics"],["dc.bibliographiccitation.volume","48"],["dc.contributor.author","Secco, Eleonora"],["dc.contributor.author","Minj, Albert"],["dc.contributor.author","Garro, Nuria"],["dc.contributor.author","Cantarero, Andres"],["dc.contributor.author","Colchero, Jaime"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Oppo, Carla Ivana"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:53:22Z"],["dc.date.available","2018-11-07T09:53:22Z"],["dc.date.issued","2015"],["dc.description.abstract","The growth selectivity and structural quality of GaN nanowires obtained by plasma-assisted molecular beam epitaxy on pre-patterned GaN(0001) templates are investigated by means of non-destructive techniques. Optimum control over the nanowire arrangement and size requires a pitch between the mask apertures below twice the diffusion length of Ga atoms. Lower pitches, however, seem to slightly diminish the structural quality of the material, as revealed by the increase of the Raman peak linewidths. The photoluminescence spectra of the nanowires show a considerable presence of basal plane stacking faults, whose density increases for decreasing nanowire diameter. The capabilities of Kelvin probe force microscopy for imaging these kind of defects are also demonstrated."],["dc.description.sponsorship","European Union [265073]"],["dc.identifier.doi","10.1088/0022-3727/48/30/305301"],["dc.identifier.isi","000357739500015"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36319"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Iop Publishing Ltd"],["dc.relation.issn","1361-6463"],["dc.relation.issn","0022-3727"],["dc.title","Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","5105"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","5109"],["dc.bibliographiccitation.volume","15"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Mueller, M."],["dc.contributor.author","Karbaum, C."],["dc.contributor.author","Schmidt, G."],["dc.contributor.author","Veit, P."],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Bertram, F."],["dc.contributor.author","Christen, J."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:53:46Z"],["dc.date.available","2018-11-07T09:53:46Z"],["dc.date.issued","2015"],["dc.description.abstract","Selective area growth has been applied to fabricate a homogeneous array of GaN nanocolumns (NC) with high crystal quality. The structural and optical properties of single NCs have been investigated at the nanometer-scale by transmission electron microscopy (TEM) and highly spatially resolved cathodoluminescence (CL) spectroscopy performed in a scanning transmission electron microscope (STEM) at liquid helium temperatures. TEM cross-section analysis reveals excellent structural properties of the GaN NCs. Sporadically, isolated basal plane stacking faults (BSF) can be found resulting in a remarkably low BSF density in the almost entire NC ensemble. Both, defect-free NCs and NCs with few BSFs have been investigated. The low defect density within the NCs allows the characterization of individual BSFs, which is of high interest for studying their optical properties. Direct nanometer-scale correlation of the CL and STEM data clearly exhibits a spatial correlation of the emission at 360.6 nm (3.438 eV) with the location of basal plane stacking faults of type I-1."],["dc.identifier.doi","10.1021/acs.nanolett.5b01278"],["dc.identifier.isi","000359613700038"],["dc.identifier.pmid","26225541"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36395"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation.issn","1530-6992"],["dc.relation.issn","1530-6984"],["dc.title","Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]