Malindretos, Jörg

[["dc.bibliographiccitation.artnumber","UNSP 053045"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","15"],["dc.contributor.affiliation","Urban, A;"],["dc.contributor.affiliation","Malindretos, J;"],["dc.contributor.affiliation","Klein-Wiele, J-H;"],["dc.contributor.affiliation","Simon, P;"],["dc.contributor.affiliation","Rizzi, A;"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Klein-Wiele, J-H"],["dc.contributor.author","Simon, P."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:24:33Z"],["dc.date.available","2018-11-07T09:24:33Z"],["dc.date.issued","2013"],["dc.date.updated","2022-02-10T10:13:19Z"],["dc.description.abstract","Selective area growth of GaN nanocolumns (NCs) by molecular beam epitaxy on laser ablated pre-patterned GaN(0001) templates is shown to provide regular arrays of Ga-polar NCs. The Ga diffusion-assisted growth mechanism is analyzed and the experiments suggest that the effective growth conditions vary with the height of the NCs due to Ga diffusion on the mask and the NC sidewalls, ranging from N-rich up to stoichiometry. The obtained morphology with semipolar facets at the tip is discussed within the framework of equilibrium thermodynamics, which provides a consistent picture also for the growth of N-polar NCs with flat tips. The structural investigation reveals almost defect-free semipolar {1 (1) over bar 02} GaN facets at the top of the NCs, which is known to be a promising way of producing templates for nanoscale semipolar GaN-based heterostructures. Almost no polarization discontinuity is expected for InxGa1-xN/GaN interfaces on such facets."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2013"],["dc.identifier.doi","10.1088/1367-2630/15/5/053045"],["dc.identifier.eissn","1367-2630"],["dc.identifier.fs","599188"],["dc.identifier.isi","000319656300003"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/9122"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29854"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.notes.oa","gold"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","IOP Publishing"],["dc.relation","info:eu-repo/grantAgreement/EC/FP7/265073/EU//NANOWIRING"],["dc.relation.issn","1367-2630"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 3.0"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Ga-polar GaN nanocolumn arrays with semipolar faceted tips"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","398"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","401"],["dc.bibliographiccitation.volume","11"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T08:59:27Z"],["dc.date.available","2018-11-07T08:59:27Z"],["dc.date.issued","2011"],["dc.description.abstract","(Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SFB 602]"],["dc.identifier.doi","10.1021/nl1030002"],["dc.identifier.isi","000287049100016"],["dc.identifier.pmid","21171626"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/7067"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/23899"],["dc.notes","NANOWIRING"],["dc.notes.intern","pdf-Datei durch Autor via Hochladeservice zum EU-Projekt NANOWIRING (s. Textdatei) erhalten. Witt 30.01.12"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation","info:eu-repo/grantAgreement/EC/FP7/265073/EU//NANOWIRING"],["dc.relation.issn","1530-6992"],["dc.relation.issn","1530-6984"],["dc.relation.orgunit","Fakultät für Physik"],["dc.title","Structure and Elemental Distribution of (Ga,Mn)N Nanowires"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]