Malindretos, Jörg

[["dc.bibliographiccitation.artnumber","UNSP 053045"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","15"],["dc.contributor.affiliation","Urban, A;"],["dc.contributor.affiliation","Malindretos, J;"],["dc.contributor.affiliation","Klein-Wiele, J-H;"],["dc.contributor.affiliation","Simon, P;"],["dc.contributor.affiliation","Rizzi, A;"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Klein-Wiele, J-H"],["dc.contributor.author","Simon, P."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:24:33Z"],["dc.date.available","2018-11-07T09:24:33Z"],["dc.date.issued","2013"],["dc.date.updated","2022-02-10T10:13:19Z"],["dc.description.abstract","Selective area growth of GaN nanocolumns (NCs) by molecular beam epitaxy on laser ablated pre-patterned GaN(0001) templates is shown to provide regular arrays of Ga-polar NCs. The Ga diffusion-assisted growth mechanism is analyzed and the experiments suggest that the effective growth conditions vary with the height of the NCs due to Ga diffusion on the mask and the NC sidewalls, ranging from N-rich up to stoichiometry. The obtained morphology with semipolar facets at the tip is discussed within the framework of equilibrium thermodynamics, which provides a consistent picture also for the growth of N-polar NCs with flat tips. The structural investigation reveals almost defect-free semipolar {1 (1) over bar 02} GaN facets at the top of the NCs, which is known to be a promising way of producing templates for nanoscale semipolar GaN-based heterostructures. Almost no polarization discontinuity is expected for InxGa1-xN/GaN interfaces on such facets."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2013"],["dc.identifier.doi","10.1088/1367-2630/15/5/053045"],["dc.identifier.eissn","1367-2630"],["dc.identifier.fs","599188"],["dc.identifier.isi","000319656300003"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/9122"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29854"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.notes.oa","gold"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","IOP Publishing"],["dc.relation","info:eu-repo/grantAgreement/EC/FP7/265073/EU//NANOWIRING"],["dc.relation.issn","1367-2630"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 3.0"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Ga-polar GaN nanocolumn arrays with semipolar faceted tips"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","104424"],["dc.bibliographiccitation.issue","10"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","84"],["dc.contributor.author","Bedoya-Pinto, A."],["dc.contributor.author","Zube, Christina"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T08:51:44Z"],["dc.date.available","2018-11-07T08:51:44Z"],["dc.date.issued","2011"],["dc.description.abstract","Structural, magnetic, and electrical transport properties of delta-MnxGa1-x epitaxial layers are investigated for alloy compositions in the range of x = 0.49 ... 0.67. All samples were grown by molecular beam epitaxy on GaN(0001) layers and exhibit a high-quality interface. The room-temperature saturation magnetization and the coercive field change markedly with alloy composition. An analysis of the electrical transport properties reveals that the lattice and magnon scattering contributions to the longitudinal resistivity as well as the scaling behavior of rho(AHE) also depend noticeably on the composition of the delta-MnGa layer. The possibility to grow delta-MnGa epitaxially on GaN(0001) over a wide range of Mn compositions and a detailed knowledge of the related physical properties are a prerequisite for the integration of this ferromagnetic alloy in wide-gap semiconductor spintronics."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SFB 602]"],["dc.identifier.doi","10.1103/PhysRevB.84.104424"],["dc.identifier.isi","000294922100003"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/22007"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Epitaxial delta-MnxGa1-x layers on GaN(0001): Structural, magnetic, and electrical transport properties"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","019501"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","16"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Klein-Wiele, J-H"],["dc.contributor.author","Simon, P."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:45:03Z"],["dc.date.available","2018-11-07T09:45:03Z"],["dc.date.issued","2014"],["dc.identifier.doi","10.1088/1367-2630/16/1/019501"],["dc.identifier.isi","000330627200001"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/34532"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Iop Publishing Ltd"],["dc.relation.issn","1367-2630"],["dc.title","Ga-polar GaN nanocolumn arrays with semipolar faceted tips (vol 15, 053045, 2013)"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","305301"],["dc.bibliographiccitation.issue","30"],["dc.bibliographiccitation.journal","Journal of Physics D Applied Physics"],["dc.bibliographiccitation.volume","48"],["dc.contributor.author","Secco, Eleonora"],["dc.contributor.author","Minj, Albert"],["dc.contributor.author","Garro, Nuria"],["dc.contributor.author","Cantarero, Andres"],["dc.contributor.author","Colchero, Jaime"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Oppo, Carla Ivana"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:53:22Z"],["dc.date.available","2018-11-07T09:53:22Z"],["dc.date.issued","2015"],["dc.description.abstract","The growth selectivity and structural quality of GaN nanowires obtained by plasma-assisted molecular beam epitaxy on pre-patterned GaN(0001) templates are investigated by means of non-destructive techniques. Optimum control over the nanowire arrangement and size requires a pitch between the mask apertures below twice the diffusion length of Ga atoms. Lower pitches, however, seem to slightly diminish the structural quality of the material, as revealed by the increase of the Raman peak linewidths. The photoluminescence spectra of the nanowires show a considerable presence of basal plane stacking faults, whose density increases for decreasing nanowire diameter. The capabilities of Kelvin probe force microscopy for imaging these kind of defects are also demonstrated."],["dc.description.sponsorship","European Union [265073]"],["dc.identifier.doi","10.1088/0022-3727/48/30/305301"],["dc.identifier.isi","000357739500015"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36319"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Iop Publishing Ltd"],["dc.relation.issn","1361-6463"],["dc.relation.issn","0022-3727"],["dc.title","Structural characterization of selective area growth GaN nanowires by non-destructive optical and electrical techniques"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","5105"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","5109"],["dc.bibliographiccitation.volume","15"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Mueller, M."],["dc.contributor.author","Karbaum, C."],["dc.contributor.author","Schmidt, G."],["dc.contributor.author","Veit, P."],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Bertram, F."],["dc.contributor.author","Christen, J."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:53:46Z"],["dc.date.available","2018-11-07T09:53:46Z"],["dc.date.issued","2015"],["dc.description.abstract","Selective area growth has been applied to fabricate a homogeneous array of GaN nanocolumns (NC) with high crystal quality. The structural and optical properties of single NCs have been investigated at the nanometer-scale by transmission electron microscopy (TEM) and highly spatially resolved cathodoluminescence (CL) spectroscopy performed in a scanning transmission electron microscope (STEM) at liquid helium temperatures. TEM cross-section analysis reveals excellent structural properties of the GaN NCs. Sporadically, isolated basal plane stacking faults (BSF) can be found resulting in a remarkably low BSF density in the almost entire NC ensemble. Both, defect-free NCs and NCs with few BSFs have been investigated. The low defect density within the NCs allows the characterization of individual BSFs, which is of high interest for studying their optical properties. Direct nanometer-scale correlation of the CL and STEM data clearly exhibits a spatial correlation of the emission at 360.6 nm (3.438 eV) with the location of basal plane stacking faults of type I-1."],["dc.identifier.doi","10.1021/acs.nanolett.5b01278"],["dc.identifier.isi","000359613700038"],["dc.identifier.pmid","26225541"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36395"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation.issn","1530-6992"],["dc.relation.issn","1530-6984"],["dc.title","Optical Emission of Individual GaN Nanocolumns Analyzed with High Spatial Resolution"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","398"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","401"],["dc.bibliographiccitation.volume","11"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T08:59:27Z"],["dc.date.available","2018-11-07T08:59:27Z"],["dc.date.issued","2011"],["dc.description.abstract","(Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SFB 602]"],["dc.identifier.doi","10.1021/nl1030002"],["dc.identifier.isi","000287049100016"],["dc.identifier.pmid","21171626"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/7067"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/23899"],["dc.notes","NANOWIRING"],["dc.notes.intern","pdf-Datei durch Autor via Hochladeservice zum EU-Projekt NANOWIRING (s. Textdatei) erhalten. Witt 30.01.12"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation","info:eu-repo/grantAgreement/EC/FP7/265073/EU//NANOWIRING"],["dc.relation.issn","1530-6992"],["dc.relation.issn","1530-6984"],["dc.relation.orgunit","Fakultät für Physik"],["dc.title","Structure and Elemental Distribution of (Ga,Mn)N Nanowires"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]