Scherff, Malte

[["dc.bibliographiccitation.artnumber","243502"],["dc.bibliographiccitation.issue","24"],["dc.bibliographiccitation.journal","Applied Physics Letters"],["dc.bibliographiccitation.volume","110"],["dc.contributor.author","Kramer, Thilo"],["dc.contributor.author","Scherff, Malte"],["dc.contributor.author","Mierwaldt, Daniel"],["dc.contributor.author","Hoffmann, Joerg"],["dc.contributor.author","Jooss, Christian"],["dc.date.accessioned","2018-11-07T10:22:44Z"],["dc.date.available","2018-11-07T10:22:44Z"],["dc.date.issued","2017"],["dc.description.abstract","Non-volatile resistance change under electric stimulation in oxides is a promising path to next generation memory devices. However, the underlying mechanisms are still not fully understood. We report here on the study of switching in Pr0.67Ca0.33MnO3-delta (PCMO) films sandwiched by noble metal Pt electrodes, where electrode oxidation can be excluded. In order to develop an understanding of the switching induced oxygen migration, its initial concentration is modified by post-annealing of the deposited PCMO films. The oxygen distribution is obtained by manganese valence determination using spatially resolved electron energy loss spectroscopy in scanning transmission electron microscopy mode. We observe correlations between virgin state resistance, resistive switching properties, oxygen vacancy distribution, and stress/strain state of the PCMO films and propose a simplified interface resistance model based on the measured valence distribution. It assumes a linear correlation of oxygen vacancy concentration with conductivity and a metal to insulator transition above a critical vacancy concentration threshold. Our results suggest that resistance changes can take place at both interfaces of symmetric devices and only requires small changes in oxygen vacancy concentration. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/)."],["dc.description.sponsorship","DFG [Jo 348/10-01]"],["dc.identifier.doi","10.1063/1.4985645"],["dc.identifier.isi","000403678300029"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/42329"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","PUB_WoS_Import"],["dc.relation.issn","1077-3118"],["dc.relation.issn","0003-6951"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","Role of oxygen vacancies for resistive switching in noble metal sandwiched Pr0.67Ca0.33MnO3-delta"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","61"],["dc.bibliographiccitation.journal","Ultramicroscopy"],["dc.bibliographiccitation.lastpage","70"],["dc.bibliographiccitation.volume","184"],["dc.contributor.author","Kramer, Thilo"],["dc.contributor.author","Mierwaldt, Daniel"],["dc.contributor.author","Scherff, Malte"],["dc.contributor.author","Kanbach, Mike"],["dc.contributor.author","Jooss, Christian"],["dc.date.accessioned","2020-12-10T15:21:40Z"],["dc.date.available","2020-12-10T15:21:40Z"],["dc.date.issued","2018"],["dc.identifier.doi","10.1016/j.ultramic.2017.08.012"],["dc.identifier.issn","0304-3991"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/73108"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-354"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","Developing an in situ environmental TEM set up for investigations of resistive switching mechanisms in Pt-Pr1-xCaxMnO3-δ-Pt sandwich structures"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","935167"],["dc.bibliographiccitation.journal","Journal of Nanomaterials"],["dc.contributor.author","Ifland, Benedikt"],["dc.contributor.author","Hoffmann, Joerg"],["dc.contributor.author","Kramer, Thilo"],["dc.contributor.author","Scherff, Malte"],["dc.contributor.author","Mildner, Stephanie"],["dc.contributor.author","Jooss, Christian"],["dc.date.accessioned","2018-11-07T10:02:49Z"],["dc.date.available","2018-11-07T10:02:49Z"],["dc.date.issued","2015"],["dc.description.abstract","The deposition of heteroepitaxial thin films on single crystalline substrates by means of physical deposition methods is commonly accompanied by mechanical strain due to lattice mismatch and defect generation. Here we present a detailed analysis of the influence of strain on the Mn solubility of Pr1-xCaXMnO3 thin films prepared by ion-beam sputtering. Combining results from X-ray diffraction, transmission electron microscopy and in situ hot-stage stress measurements, we give strong evidence that large tensile strain during deposition limits the Mn solubility range of the Perovskite phase to near-stoichiometric composition. Mn excess gives rise to MnO2. precipitates and the precipitation seems to represent a stress relaxation path. With respect to size and density of the precipitates, the relaxation process can be affected by the choice of substrate and the deposition parameters, that is, the deposition temperature and the used sputter gas."],["dc.description.sponsorship","DFG [SFB 1073]"],["dc.identifier.doi","10.1155/2015/935167"],["dc.identifier.isi","000363631200001"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/12547"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/38308"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation.issn","1687-4129"],["dc.relation.issn","1687-4110"],["dc.relation.orgunit","Fakultät für Physik"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.rights","CC BY 3.0"],["dc.title","Strain Driven Phase Decomposition in Ion-Beam Sputtered Pr1-XCaXMnO3 Films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]