Metzger, Till Hartmut

[["dc.bibliographiccitation.firstpage","5860"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","Physical Review B"],["dc.bibliographiccitation.lastpage","5872"],["dc.bibliographiccitation.volume","54"],["dc.contributor.author","Salditt, Tim"],["dc.contributor.author","Lott, D."],["dc.contributor.author","Metzger, T. H."],["dc.contributor.author","Peisl, J"],["dc.contributor.author","Vignaud, G."],["dc.contributor.author","Hoghoj, Peter"],["dc.contributor.author","Scharpf, O."],["dc.contributor.author","Hinze, P"],["dc.contributor.author","Lauer, R."],["dc.date.accessioned","2017-09-07T11:51:06Z"],["dc.date.available","2017-09-07T11:51:06Z"],["dc.date.issued","1996"],["dc.description.abstract","We have studied interfacial roughness in amorphous W/Si multilayers grown by rf sputtering at different deposition parameters by cross-sectional transmission electron microscopy, x-ray reflectivity, and diffuse x-ray scattering. The diffuse scattering intensity has been recorded in an unprecedented wide range of parallel momentum transfer, 5x10(-4) Angstrom(-1)less than or equal to q(parallel to)less than or equal to 1 Angstrom(-1), giving access to the height-height self- and cross-correlation functions on lateral length scales between a few Angstrom and 1 mu m. The results are compared for the different samples and discussed in view of the deposition parameters."],["dc.identifier.doi","10.1103/PhysRevB.54.5860"],["dc.identifier.gro","3144639"],["dc.identifier.isi","A1996VF92900092"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/2285"],["dc.notes.intern","WoS Import 2017-03-10"],["dc.notes.status","final"],["dc.notes.submitter","PUB_WoS_Import"],["dc.relation.issn","0163-1829"],["dc.relation.orgunit","Institut für Röntgenphysik"],["dc.relation.workinggroup","RG Salditt (Structure of Biomolecular Assemblies and X-Ray Physics)"],["dc.subject.gro","x-ray scattering"],["dc.title","Interfacial roughness and related growth mechanisms in sputtered W/Si multilayers"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","13"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.lastpage","17"],["dc.bibliographiccitation.volume","221"],["dc.contributor.author","Salditt, Tim"],["dc.contributor.author","Lott, D."],["dc.contributor.author","Metzger, T. H."],["dc.contributor.author","Peisl, J"],["dc.contributor.author","Vignaud, G."],["dc.contributor.author","Legrand, J. F."],["dc.contributor.author","Grubel, G"],["dc.contributor.author","Hoghoj, Peter"],["dc.contributor.author","Scharpf, O."],["dc.date.accessioned","2017-09-07T11:51:09Z"],["dc.date.available","2017-09-07T11:51:09Z"],["dc.date.issued","1996"],["dc.description.abstract","We present the first high resolution measurements of diffuse scattering from interface roughness in multilayers. The example of an amorphous W/Si multilayer is taken to illustrate the technique and the approach followed in the data evaluation. The scattering intensity under grazing incidence and exit has been recorded with an Si(220) analyzer crystal to improve the resolution perpendicular to the plane of reflection. The structure factor of the interfaces is determined over a range of more than three decades in parallel momentum transfer, while covering up to five Bragg sheets simultaneously along the exit angle. Hence, the interface roughness is probed on lateral length scales between a few Angstrom and more than one mu m."],["dc.identifier.doi","10.1016/0921-4526(95)00899-3"],["dc.identifier.gro","3144656"],["dc.identifier.isi","A1996UR27700004"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/2304"],["dc.notes.intern","WoS Import 2017-03-10"],["dc.notes.status","final"],["dc.notes.submitter","PUB_WoS_Import"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.eventlocation","LAKE GENEVA, WI"],["dc.relation.ispartof","Physica B: Condensed Matter"],["dc.relation.issn","0921-4526"],["dc.relation.orgunit","Institut für Röntgenphysik"],["dc.relation.workinggroup","RG Salditt (Structure of Biomolecular Assemblies and X-Ray Physics)"],["dc.subject.gro","x-ray scattering"],["dc.title","Characterization of interface roughness in W/Si multilayers by high resolution diffuse X-ray scattering"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","359"],["dc.bibliographiccitation.issue","4"],["dc.bibliographiccitation.journal","Journal of Physics D: Applied Physics"],["dc.bibliographiccitation.lastpage","368"],["dc.bibliographiccitation.volume","32"],["dc.contributor.author","Kovats, Z."],["dc.contributor.author","Salditt, Tim"],["dc.contributor.author","Metzger, T. H."],["dc.contributor.author","Peisl, J"],["dc.contributor.author","Stimpel, T."],["dc.contributor.author","Lorenz, Holger"],["dc.contributor.author","Chu, J. O."],["dc.contributor.author","Ismail, K."],["dc.date.accessioned","2017-09-07T11:47:34Z"],["dc.date.available","2017-09-07T11:47:34Z"],["dc.date.issued","1999"],["dc.description.abstract","We have studied the interface morphology of a strained and of a relaxed Si1-xGex layer system grown on top of a relaxed Si0.7Ge0.3 buffer on a Si(001) substrate. The strain state of the layers was determined by grazing incidence diffraction(GID). Surfaces have been investigated by atomic force microscopy (AFM) and exhibit anisotropies of RMS roughness and lateral correlation length along the [110] and [100] directions, which are parallel and diagonal to the cross-hatch pattern, respectively. Diffuse x-ray scattering under grazing incidence and exit close to the forwards direction revealed conformal roughness of the interfaces at lateral correlation lengths of about 1 mu m. To deal with the large RMS roughness of up to 40 Angstrom, the concept of interfaces without a lateral cut-off length was used to describe the diffuse x-ray scattering within the Born approximation. In the case of a relaxed layer, additional roughness on a lateral length scale of 30 nm was observed at a buried interface by diffuse scattering out of the plane of incidence."],["dc.identifier.doi","10.1088/0022-3727/32/4/002"],["dc.identifier.gro","3144490"],["dc.identifier.isi","000079052500002"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/2119"],["dc.notes.intern","WoS Import 2017-03-10"],["dc.notes.status","final"],["dc.notes.submitter","PUB_WoS_Import"],["dc.relation.issn","0022-3727"],["dc.relation.orgunit","Institut für Röntgenphysik"],["dc.relation.workinggroup","RG Salditt (Structure of Biomolecular Assemblies and X-Ray Physics)"],["dc.subject.gro","x-ray scattering"],["dc.title","Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","565"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","Europhysics Letters (EPL)"],["dc.bibliographiccitation.lastpage","570"],["dc.bibliographiccitation.volume","36"],["dc.contributor.author","Salditt, Tim"],["dc.contributor.author","Lott, D."],["dc.contributor.author","Metzger, T. H."],["dc.contributor.author","Peisl, J"],["dc.contributor.author","Fischer, R"],["dc.contributor.author","Zweck, J"],["dc.contributor.author","Hoghoj, Peter"],["dc.contributor.author","Scharpf, O."],["dc.contributor.author","Vignaud, G."],["dc.date.accessioned","2017-09-07T11:51:04Z"],["dc.date.available","2017-09-07T11:51:04Z"],["dc.date.issued","1996"],["dc.description.abstract","We have investigated the interfacial roughness of a W/Si multilayer sputtered at high Ar gas pressure. The roughness exponents as determined from diffuse X-ray scattering agree well with the Huygens-principle growth model proposed by Tang, Alexander and Bruinsma (TAB). Simple microscopic explanations are given to account for the finding of Edwards-Wilkinson (EW) type growth at low Ar pressure and the TAB growth mechanism at high pressures, as well as for the absence of any scaling according to the Kardar-Parisi-Zhang (KPZ) equation."],["dc.identifier.doi","10.1209/epl/i1996-00270-x"],["dc.identifier.gro","3144625"],["dc.identifier.isi","A1996WA49900001"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/2270"],["dc.notes.intern","WoS Import 2017-03-10"],["dc.notes.status","final"],["dc.notes.submitter","PUB_WoS_Import"],["dc.relation.issn","0295-5075"],["dc.relation.orgunit","Institut für Röntgenphysik"],["dc.relation.workinggroup","RG Salditt (Structure of Biomolecular Assemblies and X-Ray Physics)"],["dc.subject.gro","x-ray scattering"],["dc.title","Observation of the Huygens-principle growth mechanism in sputtered W/Si multilayers"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]