Wenderoth, Martin

[["dc.bibliographiccitation.artnumber","125322"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","76"],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Suergers, Christoph"],["dc.contributor.author","von Loehneysen, H."],["dc.contributor.author","Rohlfing, M."],["dc.date.accessioned","2018-11-07T10:59:24Z"],["dc.date.available","2018-11-07T10:59:24Z"],["dc.date.issued","2007"],["dc.description.abstract","Substitutional phosphorus atoms at the Si(111)-(2x1) surface have been studied with scanning tunneling microscopy at 8 K. Four different types of the P-induced contrast pattern are distinguished due to their voltage-dependent contrast. Three of them are identified as substitutional P atoms on distinct lattice sites by their spatial symmetry and by comparison with ab initio calculations of the local density of electronic states of substitutional P atoms. The fourth pattern of a P-induced contrast cannot be attributed to the remaining fourth site of the pi-bonded chain. This raises questions not only on the origin of this pattern but also on the absence of substitutional P atoms on one lattice position in this surface."],["dc.identifier.doi","10.1103/PhysRevB.76.125322"],["dc.identifier.isi","000249786500059"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50691"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Identification of P dopants at nonequivalent lattice sites of the Si(111)-(2x1) surface"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","245424"],["dc.bibliographiccitation.issue","24"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","70"],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Sauthoff, K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Rohlfing, M."],["dc.date.accessioned","2018-11-07T10:43:36Z"],["dc.date.available","2018-11-07T10:43:36Z"],["dc.date.issued","2004"],["dc.description.abstract","The electronic structure of the Si(111)-2x1 surface has been studied with scanning tunneling spectroscopy (STS). A large experimental local density of states data set of LDOS(x,y,E) with subatomic resolution has been compared with ab initio calculated LDOS distributions. The influence of the tunneling tip DOS has been eliminated by repeated measurements with different tips. The experimentally determined shape of the LDOS(x,y,E) agrees very well with the calculated results based on the pi-bonded-chain model for both the surface valence and the conduction band. The good agreement with ab initio calculations of the electronic structure of the Si(111)-2x1 surface shows that STS provides reliable information of the sample LDOS even with subatomic resolution."],["dc.identifier.doi","10.1103/PhysRevB.70.245424"],["dc.identifier.isi","000226112300107"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/47094"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","American Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","2x1 reconstructed Si(111) surface: STM experiments versus ab initio calculations"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","055009"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","15"],["dc.contributor.affiliation","Sürgers, C;"],["dc.contributor.affiliation","Wenderoth, M;"],["dc.contributor.affiliation","Löser, K;"],["dc.contributor.affiliation","Garleff, J K;"],["dc.contributor.affiliation","Ulbrich, R G;"],["dc.contributor.affiliation","Lukas, M;"],["dc.contributor.affiliation","v Löhneysen, H;"],["dc.contributor.author","Suergers, Christoph"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Loeser, K."],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Lukas, M."],["dc.contributor.author","v Loehneysen, H."],["dc.date.accessioned","2018-11-07T09:24:41Z"],["dc.date.available","2018-11-07T09:24:41Z"],["dc.date.issued","2013"],["dc.date.updated","2022-02-10T10:17:24Z"],["dc.description.abstract","The (111)-2x1 surface of in situ cleaved heavily P-or B-doped Si is investigated by scanning tunnelling microscopy and spectroscopy at room temperature and at low temperature. P atoms have been identified on different sites of the Si(111)-2x1 surface by their characteristic voltage-dependent contrast for positive as well as negative buckling of the pi-bonded chains. The distributions of dopants per surface area and of nearest-neighbour distances are found to be in agreement with a random arrangement of dopants in Si up to doping levels well above the metal-insulator transition. In addition, P atoms have been identified by their depth-dependent contrast down to the third layer beneath the surface with a volume density in agreement with the bulk doping density. The random electronic disorder supports the view of an Anderson transition driven by disorder close to the critical concentration or critical uniaxial stress."],["dc.identifier.doi","10.1088/1367-2630/15/5/055009"],["dc.identifier.eissn","1367-2630"],["dc.identifier.fs","599177"],["dc.identifier.isi","000318968300003"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/10562"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29884"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","IOP Publishing"],["dc.relation.issn","1367-2630"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 3.0"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Electronic disorder of P- and B-doped Si at the metal-insulator transition investigated by scanning tunnelling microscopy and electronic transport"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","073406"],["dc.bibliographiccitation.issue","7"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","72"],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Surgers, C."],["dc.contributor.author","von Lohneysen, H."],["dc.date.accessioned","2018-11-07T11:19:09Z"],["dc.date.available","2018-11-07T11:19:09Z"],["dc.date.issued","2005"],["dc.description.abstract","Scanning tunneling spectroscopy is used to study the electronic properties of the Si(111)-2x1 surface at 8 K. Wave-function mapping reveals highly anisotropic scattering of electrons with one-dimensional (1D) confinement on the pi-bonded chains. The differential tunneling conductance is strongly reduced at the Fermi energy E-F and exhibits a Coulomb gap. The gap width W scales with the inverse length L of the chain segments defined by the distance between two adjacent scatterers such as surface steps or dopant atoms within a given chain. A model of electronic transport through 1D chain segments of finite length describes the observed behavior."],["dc.identifier.doi","10.1103/PhysRevB.72.073406"],["dc.identifier.isi","000231564500035"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/55203"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","American Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Evidence for one-dimensional electron propagation on Si(111)-(2x1) from Coulomb blockade"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","3538"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","3542"],["dc.bibliographiccitation.volume","11"],["dc.contributor.author","Teichmann, K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Loth, S."],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wijnheijmer, A. P."],["dc.contributor.author","Koenraad, P. M."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.date.accessioned","2018-11-07T08:52:14Z"],["dc.date.available","2018-11-07T08:52:14Z"],["dc.date.issued","2011"],["dc.description.abstract","In gated semiconductor devices, the space charge layer that is located under the gate electrode acts as the functional element. With increasing gate voltage, the microscopic process forming this space charge layer involves the subsequent ionization or electron capture of individual dopants within the semiconductor. In this Letter, a scanning tunneling microscope tip is used as a movable gate above the (110) surface of n-doped GaAs. We study the build-up process of the space charge region considering donors and visualize the charge states of individual and multi donor systems. The charge configuration of single donors is determined by the position of the tip and the applied gate voltage. In contrast, a two donor system with interdonor distances smaller than 10 nm shows a more complex behavior. The electrostatic interaction between the donors in combination with the modification of their electronic properties close to the surface results in ionization gaps and bistable charge switching behavior."],["dc.identifier.doi","10.1021/nl201024b"],["dc.identifier.isi","000294790200005"],["dc.identifier.pmid","21842882"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/22117"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation.issn","1530-6984"],["dc.title","Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","076103"],["dc.bibliographiccitation.issue","7"],["dc.bibliographiccitation.journal","Physical Review Letters"],["dc.bibliographiccitation.volume","101"],["dc.contributor.author","Teichmann, K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Loth, S."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wijnheijmer, A. P."],["dc.contributor.author","Koenraad, P. M."],["dc.date.accessioned","2018-11-07T11:12:09Z"],["dc.date.available","2018-11-07T11:12:09Z"],["dc.date.issued","2008"],["dc.description.abstract","The charge state of individually addressable impurities in semiconductor material was manipulated with a scanning tunneling microscope. The manipulation was fully controlled by the position of the tip and the voltage applied between tip and sample. The experiments were performed at low temperature on the {110} surface of silicon doped GaAs. Silicon donors up to 1 nm below the surface can be reversibly switched between their neutral and ionized state by the local potential induced by the tip. By using ultrasharp tips, the switching process occurs close enough to the impurity to be observed as a sharp circular feature surrounding the donor. By utilizing the controlled manipulation, we were able to map the Coulomb potential of a single donor at the semiconductor-vacuum interface."],["dc.identifier.doi","10.1103/PhysRevLett.101.076103"],["dc.identifier.isi","000258473800048"],["dc.identifier.pmid","18764558"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/53600"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","0031-9007"],["dc.title","Controlled charge switching on a single donor with a scanning tunneling microscope"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","125310"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","84"],["dc.contributor.author","Wijnheijmer, A. P."],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Teichmann, K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Loth, S."],["dc.contributor.author","Koenraad, P. M."],["dc.date.accessioned","2018-11-07T08:51:46Z"],["dc.date.available","2018-11-07T08:51:46Z"],["dc.date.issued","2011"],["dc.description.abstract","We present a comprehensive scanning tunneling microscopy and spectroscopy study of individual Si dopants in GaAs. We explain all the spectroscopic peaks and their voltage dependence in the band gap and in the conduction band. We observe both the filled and empty donor state. Donors close to the surface, which have an enhanced binding energy, show a second ionization ring, corresponding to the negatively charged donor D-. The observation of all predicted features at the expected spectral position and with the expected voltage-distance dependence confirms their correct identification and the semiquantitative analyses of their energetic positions."],["dc.description.sponsorship","NAMASTE; [DFG-SFB 602]; [DFG-SPP 1285]"],["dc.identifier.doi","10.1103/PhysRevB.84.125310"],["dc.identifier.isi","000294777800010"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/22014"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Single Si dopants in GaAs studied by scanning tunneling microscopy and spectroscopy"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","166101"],["dc.bibliographiccitation.issue","16"],["dc.bibliographiccitation.journal","Physical Review Letters"],["dc.bibliographiccitation.volume","102"],["dc.contributor.author","Wijnheijmer, A. P."],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Teichmann, K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Loth, S."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Maksym, P. A."],["dc.contributor.author","Roy, M."],["dc.contributor.author","Koenraad, P. M."],["dc.date.accessioned","2018-11-07T08:30:42Z"],["dc.date.available","2018-11-07T08:30:42Z"],["dc.date.issued","2009"],["dc.description.abstract","We measured the ionization threshold voltage of individual impurities close to a semiconductor-vacuum interface, where we use the STM tip to ionize individual donors. We observe a reversed order of ionization with depth below the surface, which proves that the binding energy is enhanced towards the surface. This is in contrast to the predicted reduction for a Coulombic impurity in the effective mass approach. We can estimate the binding energy from the ionization threshold and show experimentally that in the case of silicon doped gallium arsenide the binding energy gradually increases over the last 1.2 nm below the (110) surface."],["dc.description.sponsorship","NAMASTE [214499]; STW-VICI [6631]; DFG-SFB [602]; DFG-SPP [1285]"],["dc.identifier.doi","10.1103/PhysRevLett.102.166101"],["dc.identifier.isi","000265479300042"],["dc.identifier.pmid","19518726"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/16951"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","0031-9007"],["dc.title","Enhanced Donor Binding Energy Close to a Semiconductor Surface"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","085303"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","86"],["dc.contributor.author","Loeser, K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Spaeth, T. K. A."],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Poetter, Markus"],["dc.contributor.author","Rohlfing, M."],["dc.date.accessioned","2018-11-07T09:07:16Z"],["dc.date.available","2018-11-07T09:07:16Z"],["dc.date.issued","2012"],["dc.description.abstract","The influence of the buckling type of the Si(111)-2 x 1 surface on the electronic structure is studied with high-resolution scanning tunneling microscopy and scanning tunneling spectroscopy and compared to ab initio calculations. We utilize the multitude of domain boundaries to identify differently buckled domains. I (V) measurements with high spatial and energetic resolution show the electronic structures of the two buckling types. We determine the position of the surface bands in the band gap of the bulk silicon and relative to each other. The high spatial resolution provides insight into the crossover from one buckling type to the other at the domain boundaries."],["dc.description.sponsorship","DFG [WE 1889/3]"],["dc.identifier.doi","10.1103/PhysRevB.86.085303"],["dc.identifier.isi","000307273800004"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/25755"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Spectroscopy of positively and negatively buckled domains on Si(111)-2x1"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]