Wenderoth, Martin

[["dc.bibliographiccitation.artnumber","125322"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","76"],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Suergers, Christoph"],["dc.contributor.author","von Loehneysen, H."],["dc.contributor.author","Rohlfing, M."],["dc.date.accessioned","2018-11-07T10:59:24Z"],["dc.date.available","2018-11-07T10:59:24Z"],["dc.date.issued","2007"],["dc.description.abstract","Substitutional phosphorus atoms at the Si(111)-(2x1) surface have been studied with scanning tunneling microscopy at 8 K. Four different types of the P-induced contrast pattern are distinguished due to their voltage-dependent contrast. Three of them are identified as substitutional P atoms on distinct lattice sites by their spatial symmetry and by comparison with ab initio calculations of the local density of electronic states of substitutional P atoms. The fourth pattern of a P-induced contrast cannot be attributed to the remaining fourth site of the pi-bonded chain. This raises questions not only on the origin of this pattern but also on the absence of substitutional P atoms on one lattice position in this surface."],["dc.identifier.doi","10.1103/PhysRevB.76.125322"],["dc.identifier.isi","000249786500059"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50691"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Identification of P dopants at nonequivalent lattice sites of the Si(111)-(2x1) surface"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","245424"],["dc.bibliographiccitation.issue","24"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","70"],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Sauthoff, K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Rohlfing, M."],["dc.date.accessioned","2018-11-07T10:43:36Z"],["dc.date.available","2018-11-07T10:43:36Z"],["dc.date.issued","2004"],["dc.description.abstract","The electronic structure of the Si(111)-2x1 surface has been studied with scanning tunneling spectroscopy (STS). A large experimental local density of states data set of LDOS(x,y,E) with subatomic resolution has been compared with ab initio calculated LDOS distributions. The influence of the tunneling tip DOS has been eliminated by repeated measurements with different tips. The experimentally determined shape of the LDOS(x,y,E) agrees very well with the calculated results based on the pi-bonded-chain model for both the surface valence and the conduction band. The good agreement with ab initio calculations of the electronic structure of the Si(111)-2x1 surface shows that STS provides reliable information of the sample LDOS even with subatomic resolution."],["dc.identifier.doi","10.1103/PhysRevB.70.245424"],["dc.identifier.isi","000226112300107"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/47094"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","American Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","2x1 reconstructed Si(111) surface: STM experiments versus ab initio calculations"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","165402"],["dc.bibliographiccitation.issue","16"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","63"],["dc.contributor.author","Engel, K. J."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Quaas, N."],["dc.contributor.author","Reusch, T. C. G."],["dc.contributor.author","Sauthoff, K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.date.accessioned","2018-11-07T09:09:59Z"],["dc.date.available","2018-11-07T09:09:59Z"],["dc.date.issued","2001"],["dc.description.abstract","Standing-wave patterns of Au(111) surface electrons in the vicinity of monatornic steps were studied by mapping the thermovoltage across the tunneling gap of a low-temperature scanning tunneling microscope (STM). In contrast to other STM spectroscopic methods, the amplitude of the standing-wave oscillations builds up with distance from the step, up to a maximum. When the temperature T is decreased, the position of this maximum shifts outwards proportional to 1/T. This behavior is explained with an analytical expression and also with numerical calculations of the thermovoltage in the framework of the model of Tersoff and Hamann."],["dc.identifier.doi","10.1103/PhysRevB.63.165402"],["dc.identifier.isi","000168343400082"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/26389"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1550-235X"],["dc.relation.issn","1098-0121"],["dc.title","Thermovoltage mapping of standing electron waves on Au(111) surfaces at low temperatures"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","57"],["dc.bibliographiccitation.issue","1-3"],["dc.bibliographiccitation.journal","Surface Science"],["dc.bibliographiccitation.lastpage","64"],["dc.bibliographiccitation.volume","550"],["dc.contributor.author","Quaas, N."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.date.accessioned","2018-11-07T10:51:11Z"],["dc.date.available","2018-11-07T10:51:11Z"],["dc.date.issued","2004"],["dc.description.abstract","The entropy-driven relaxation of a unique, non-equilibrium step edge configuration on the Ag(111) surface was observed using time-resolved STM imaging at room temperature. Using the Gibbs-Thomson relation, the relaxation process is quantitatively described as diffusive mass transport in terms of a gradient in the chemical potential along the monoatomic step edge. The STM data directly show that mass transport on Ag(111) is dominated by step edge diffusion at 295 K, and allow an estimate of the corresponding effective energy barrier. We obtain E-eff = 0.49 +/- 0.05 eV and compare this value with recent results on island diffusion studies. (C) 2003 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.susc.2003.12.021"],["dc.identifier.isi","000188817100009"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/48831"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.relation.issn","0039-6028"],["dc.title","Diffusive atom transport along step edges on Ag(111) at 295 K"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","3571"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","3575"],["dc.bibliographiccitation.volume","13"],["dc.contributor.author","Teichmann, Karen"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Prueser, Henning"],["dc.contributor.author","Pierz, Klaus"],["dc.contributor.author","Schumacher, Hans Werner"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.date.accessioned","2018-11-07T09:21:48Z"],["dc.date.available","2018-11-07T09:21:48Z"],["dc.date.issued","2013"],["dc.description.abstract","In As quantum dots embedded in an AlAs matrix inside a double barrier resonant tunneling diode are investigated by cross-sectional scanning tunneling spectroscopy. The wave functions of the bound quantum dot states are spatially and energetically resolved. These bound states are known to be responsible for resonant tunneling phenomena in such quantum dot diodes. The wave functions reveal a textbook-like one-dimensional harmonic oscillator behavior showing up to five equidistant energy levels of 80 meV spacing. The derived effective oscillator mass of m = 0.24m(0) is 1 order of magnitude higher than the effective electron mass of bulk In As that we attribute to the influence of the surrounding AlAs matrix. This underlines the importance of the matrix material for tailored QD devices with well-defined properties."],["dc.description.sponsorship","DFG [SPP1285]; [DFG-SPP 1285]"],["dc.identifier.doi","10.1021/nl401217q"],["dc.identifier.isi","000323241000019"],["dc.identifier.pmid","23777509"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29193"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation.issn","1530-6992"],["dc.relation.issn","1530-6984"],["dc.title","Harmonic Oscillator Wave Functions of a Self-Assembled InAs Quantum Dot Measured by Scanning Tunneling Microscopy"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","146804"],["dc.bibliographiccitation.issue","14"],["dc.bibliographiccitation.journal","Physical Review Letters"],["dc.bibliographiccitation.volume","114"],["dc.contributor.author","Ifflaender, T."],["dc.contributor.author","Rolf-Pissarczyk, Steffen"],["dc.contributor.author","Winking, L."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Al-Zubi, A."],["dc.contributor.author","Bluegel, Stefan"],["dc.contributor.author","Wenderoth, Martin"],["dc.date.accessioned","2018-11-07T09:58:36Z"],["dc.date.available","2018-11-07T09:58:36Z"],["dc.date.issued","2015"],["dc.description.abstract","We investigate low temperature grown, abrupt, epitaxial, nonintermixed, defect-free n-type and p-type Fe/GaAsd(110) interfaces by cross-sectional scanning tunneling microscopy and spectroscopy with atomic resolution. The probed local density of states shows that a model of the ideal metal-semiconductor interface requires a combination of metal-induced gap states and bond polarization at the interface which is nicely corroborated by density functional calculations. A three-dimensional finite element model of the space charge region yields a precise value for the Schottky barrier height."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SPP 1285]"],["dc.identifier.doi","10.1103/PhysRevLett.114.146804"],["dc.identifier.isi","000352472400011"],["dc.identifier.pmid","25910150"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/37396"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1079-7114"],["dc.relation.issn","0031-9007"],["dc.title","Local Density of States at Metal-Semiconductor Interfaces: An Atomic Scale Study"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","1190"],["dc.bibliographiccitation.issue","5918"],["dc.bibliographiccitation.journal","Science"],["dc.bibliographiccitation.lastpage","1193"],["dc.bibliographiccitation.volume","323"],["dc.contributor.author","Weismann, Alexander"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Lounis, Samir"],["dc.contributor.author","Zahn, Peter"],["dc.contributor.author","Quaas, Norbert"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Dederichs, Peter H."],["dc.contributor.author","Bluegel, Stefan"],["dc.date.accessioned","2018-11-07T08:32:36Z"],["dc.date.available","2018-11-07T08:32:36Z"],["dc.date.issued","2009"],["dc.description.abstract","The Fermi surface that characterizes the electronic band structure of crystalline solids can be difficult to image experimentally in a way that reveals local variations. We show that Fermi surfaces can be imaged in real space with a low-temperature scanning tunneling microscope when subsurface point scatterers are present: in this case, cobalt impurities under a copper surface. Even the very simple Fermi surface of copper causes strongly anisotropic propagation characteristics of bulk electrons that are confined in beamlike paths on the nanoscale. The induced charge density oscillations on the nearby surface can be used for mapping buried defects and interfaces and some of their properties."],["dc.identifier.doi","10.1126/science.1168738"],["dc.identifier.isi","000263687600032"],["dc.identifier.pmid","19251623"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/17377"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Assoc Advancement Science"],["dc.relation.issn","0036-8075"],["dc.title","Seeing the Fermi Surface in Real Space by Nanoscale Electron Focusing"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","055009"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","15"],["dc.contributor.affiliation","Sürgers, C;"],["dc.contributor.affiliation","Wenderoth, M;"],["dc.contributor.affiliation","Löser, K;"],["dc.contributor.affiliation","Garleff, J K;"],["dc.contributor.affiliation","Ulbrich, R G;"],["dc.contributor.affiliation","Lukas, M;"],["dc.contributor.affiliation","v Löhneysen, H;"],["dc.contributor.author","Suergers, Christoph"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Loeser, K."],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Lukas, M."],["dc.contributor.author","v Loehneysen, H."],["dc.date.accessioned","2018-11-07T09:24:41Z"],["dc.date.available","2018-11-07T09:24:41Z"],["dc.date.issued","2013"],["dc.date.updated","2022-02-10T10:17:24Z"],["dc.description.abstract","The (111)-2x1 surface of in situ cleaved heavily P-or B-doped Si is investigated by scanning tunnelling microscopy and spectroscopy at room temperature and at low temperature. P atoms have been identified on different sites of the Si(111)-2x1 surface by their characteristic voltage-dependent contrast for positive as well as negative buckling of the pi-bonded chains. The distributions of dopants per surface area and of nearest-neighbour distances are found to be in agreement with a random arrangement of dopants in Si up to doping levels well above the metal-insulator transition. In addition, P atoms have been identified by their depth-dependent contrast down to the third layer beneath the surface with a volume density in agreement with the bulk doping density. The random electronic disorder supports the view of an Anderson transition driven by disorder close to the critical concentration or critical uniaxial stress."],["dc.identifier.doi","10.1088/1367-2630/15/5/055009"],["dc.identifier.eissn","1367-2630"],["dc.identifier.fs","599177"],["dc.identifier.isi","000318968300003"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/10562"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29884"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","IOP Publishing"],["dc.relation.issn","1367-2630"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 3.0"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Electronic disorder of P- and B-doped Si at the metal-insulator transition investigated by scanning tunnelling microscopy and electronic transport"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","115344"],["dc.bibliographiccitation.issue","11"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","77"],["dc.contributor.author","Loth, S."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.date.accessioned","2018-11-07T11:18:01Z"],["dc.date.available","2018-11-07T11:18:01Z"],["dc.date.issued","2008"],["dc.description.abstract","The spatial distribution of the local density of states at Mn acceptors near the (110) surface of p-doped InAs is investigated by scanning tunneling microscopy. The shapes of the acceptor contrasts for different dopant depths under the surface are analyzed. Acceptors located within the first ten subsurface layers of the semiconductor show a lower symmetry than expected from theoretical predictions for the bulk acceptor wave function. They exhibit a (001) mirror asymmetry. The degree of asymmetry depends on the acceptor atoms' depths. The measured contrasts for acceptors buried below the tenth subsurface layer closely match the theoretically derived shape. Two effects are able to cause the observed symmetry reduction, i.e., the strain field of the surface relaxation and the tip-induced electric field. While both effects induce similar asymmetries, a comparison of their relative strengths indicates that surface-related strain is the dominant effect for Mn in InAs."],["dc.identifier.doi","10.1103/PhysRevB.77.115344"],["dc.identifier.isi","000254542800140"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/54949"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Asymmetry of acceptor wave functions caused by surface-related strain and electric field in InAs"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","166604"],["dc.bibliographiccitation.issue","16"],["dc.bibliographiccitation.journal","Physical Review Letters"],["dc.bibliographiccitation.volume","108"],["dc.contributor.author","Prueser, Henning"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Weismann, Alexander"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.date.accessioned","2018-11-07T09:11:06Z"],["dc.date.available","2018-11-07T09:11:06Z"],["dc.date.issued","2012"],["dc.description.abstract","We investigate single Fe and Co atoms buried below a Cu(100) surface using low temperature scanning tunneling spectroscopy. By mapping the local density of states of the itinerant electrons at the surface, the Kondo resonance near the Fermi energy is analyzed. Probing bulk impurities in this well-defined scattering geometry allows separating the physics of the Kondo system and the measuring process. The line shape of the Kondo signature shows an oscillatory behavior as a function of depth of the impurity as well as a function of lateral distance. The oscillation period along the different directions reveals that the spectral function of the itinerant electrons is anisotropic."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SFB 602]"],["dc.identifier.doi","10.1103/PhysRevLett.108.166604"],["dc.identifier.isi","000303070600016"],["dc.identifier.pmid","22680744"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/26647"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","0031-9007"],["dc.title","Mapping Itinerant Electrons around Kondo Impurities"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]