Kotzott, Thomas

[["dc.bibliographiccitation.firstpage","5110"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","5115"],["dc.bibliographiccitation.volume","15"],["dc.contributor.author","Willke, Philip"],["dc.contributor.author","Amani, Julian Alexander"],["dc.contributor.author","Sinterhauf, Anna"],["dc.contributor.author","Thakur, Sangeeta"],["dc.contributor.author","Kotzott, Thomas"],["dc.contributor.author","Druga, Thomas"],["dc.contributor.author","Weikert, Steffen"],["dc.contributor.author","Maiti, Kalobaran"],["dc.contributor.author","Hofsaess, Hans"],["dc.contributor.author","Wenderoth, Martin"],["dc.date.accessioned","2018-11-07T09:53:46Z"],["dc.date.available","2018-11-07T09:53:46Z"],["dc.date.issued","2015"],["dc.description.abstract","We investigate the structural, electronic, and transport properties of substitutional defects in SiC-graphene by means of scanning tunneling microscopy and magnetotransport experiments. Using ion incorporation via ultralow energy ion implantation, the influence of different ion species (boron, nitrogen, and carbon) can directly be compared. While boron and nitrogen atoms lead to an effective doping of the graphene sheet and can reduce or raise the position of the Fermi level, respectively, C-12(+) carbon ions are used to study possible defect creation by the bombardment. For low-temperature transport, the implantation leads to an increase in resistance and a decrease in mobility in contrast to undoped samples. For undoped samples, we observe in high magnetic fields a positive magnetoresistance that changes to negative for the doped samples, especially for B-11(+)- and C-12(+)-ions. We conclude that the conductivity of the graphene sheet is lowered by impurity atoms and especially by lattice defects, because they result in weak localization effects at low temperatures."],["dc.identifier.doi","10.1021/acs.nanolett.5b01280"],["dc.identifier.isi","000359613700039"],["dc.identifier.pmid","26120803"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36396"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation.issn","1530-6992"],["dc.relation.issn","1530-6984"],["dc.title","Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic, and Transport Properties"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","470"],["dc.bibliographiccitation.journal","Carbon"],["dc.bibliographiccitation.lastpage","476"],["dc.bibliographiccitation.volume","102"],["dc.contributor.author","Willke, Philip"],["dc.contributor.author","Moehle, Christian"],["dc.contributor.author","Sinterhauf, Anna"],["dc.contributor.author","Kotzott, Thomas"],["dc.contributor.author","Yu, H. K."],["dc.contributor.author","Wodtke, Alec"],["dc.contributor.author","Wenderoth, Martin"],["dc.date.accessioned","2018-11-07T10:14:01Z"],["dc.date.available","2018-11-07T10:14:01Z"],["dc.date.issued","2016"],["dc.description.abstract","By using Kelvin Probe Force Microscopy with an additional applied electric field we investigate the local voltage drop in graphene on SiO2 under ambient conditions. We are able to quantify the variation of the local sheet resistance and to resolve localized voltage drops at line defects. Our data demonstrates that the resistance of line defects has been overestimated so far. Moreover, we show that wrinkles have the largest resistance, rho(Wrinkle) < 80 Omega mu m. Temperature-dependent measurements show that the local monolayer sheet resistance reflects the macroscopic increase in resistance with temperature while the defect resistance for folded wrinkles is best described by a temperature-independent model which we attribute to interlayer tunneling. (C) 2016 Elsevier Ltd. All rights reserved."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft (DFG)"],["dc.identifier.doi","10.1016/j.carbon.2016.02.067"],["dc.identifier.isi","000372808200052"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/40547"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Pergamon-elsevier Science Ltd"],["dc.relation.issn","1873-3891"],["dc.relation.issn","0008-6223"],["dc.title","Local transport measurements in graphene on SiO2 using Kelvin probe force microscopy"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]