Now showing 1 - 10 of 30
  • 2006Conference Paper
    [["dc.bibliographiccitation.firstpage","121"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS"],["dc.bibliographiccitation.lastpage","125"],["dc.bibliographiccitation.volume","245"],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Milinovic, Velimir"],["dc.contributor.author","Sahoo, P. K."],["dc.contributor.author","Klaumunzer, S."],["dc.date.accessioned","2018-11-07T10:03:37Z"],["dc.date.available","2018-11-07T10:03:37Z"],["dc.date.issued","2006"],["dc.description.abstract","Modifications of Ni/Si and Fe/Si bilayers induced by swift heavy ions were studied in the regime Of pure electronic stopping. Poly-crystalline films, 65-75 nm thick, were deposited via electron evaporation (Ni) or pulsed laser deposition (Fe) onto Si wafers and irradiated at <= 300 K with 350-MeV Au26+ ions to fluences of up to 5 x 10(15) ions/cm(2). The samples were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction and the magneto-optical Kerr effect. In the Fe/Si samples, a 20 nm Fe-57 layer was interlayed between Fe-nat and Si in order to monitor interface mixing and phase formation by means of Moessbauer spectroscopy. In both systems, a high mixing rate of approximate to 60 nm(4) was found, correlated with relaxation of the as-deposited stress and uniaxial magnetic anisotropy. At higher fluences, full interdiffusion gives rise to amorphous silicide phases, build-up of stress and loss of magnetic texture. (c) 2005 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.nimb.2005.11.130"],["dc.identifier.isi","000236288500025"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/38514"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","6th International Symposium on Swift Heavy Ions in Matter"],["dc.relation.eventlocation","Aschaffenburg, GERMANY"],["dc.relation.issn","0168-583X"],["dc.title","On the structure and magnetism of Ni/Si and Fe/Si bilayers irradiated with 350-MeV Au ions"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2007Conference Paper
    [["dc.bibliographiccitation.firstpage","E583"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Journal of Magnetism and Magnetic Materials"],["dc.bibliographiccitation.lastpage","E586"],["dc.bibliographiccitation.volume","316"],["dc.contributor.author","Pilet, N."],["dc.contributor.author","Ashworth, T. V."],["dc.contributor.author","Marioni, M. A."],["dc.contributor.author","Hug, H. J."],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.date.accessioned","2018-11-07T10:59:09Z"],["dc.date.available","2018-11-07T10:59:09Z"],["dc.date.issued","2007"],["dc.description.abstract","Hysteresis and coercivity in ferromagnetic thin films strongly depend on the extent of the domain nucleation and wall motion. Ion irradiation can affect both the number of domain walls existing for a given field history and their mobility. To address these factors, we present a micromagnetic study of magnetisation reversal for non-irradiated and Xe-irradiated 185 nm Ni films at 8.3 K. It is shown that irradiation facilitates reversal domain nucleation and increases the number of pinning centres at least 10-fold, although this does not augment hysteresis. In field magnetic force microscopy (MFM) reveals this to be due to a domain size no larger than the average distance between pinning centres. (c) 2007 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jmmm.2007.03.214"],["dc.identifier.isi","000248150000257"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50631"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","3rd Joint European Magnetic Symposia (JEMS 06)"],["dc.relation.eventlocation","San Sebastian, SPAIN"],["dc.relation.issn","0304-8853"],["dc.title","Effect of ion irradiation on domain nucleation and wall motion in Ni films"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2011Journal Article
    [["dc.bibliographiccitation.firstpage","881"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS"],["dc.bibliographiccitation.lastpage","885"],["dc.bibliographiccitation.volume","269"],["dc.contributor.author","Novakovic, M."],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Popovic, Mila"],["dc.contributor.author","Bibic, N."],["dc.contributor.author","Hofsaess, H."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.date.accessioned","2018-11-07T08:56:34Z"],["dc.date.available","2018-11-07T08:56:34Z"],["dc.date.issued","2011"],["dc.description.abstract","Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si -> CoSi -> CoSi(2). (C) 2010 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.nimb.2010.12.077"],["dc.identifier.isi","290191800019"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/23185"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.relation.issn","0168-583X"],["dc.title","Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2003Journal Article
    [["dc.bibliographiccitation.firstpage","668"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","EUROPHYSICS LETTERS"],["dc.bibliographiccitation.lastpage","674"],["dc.bibliographiccitation.volume","64"],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Gupta, R."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Luo, Y."],["dc.contributor.author","Mueller, Gerhard A."],["dc.contributor.author","Schaaf, Peter"],["dc.contributor.author","Uhrmacher, Michael"],["dc.date.accessioned","2018-11-07T10:34:19Z"],["dc.date.available","2018-11-07T10:34:19Z"],["dc.date.issued","2003"],["dc.description.abstract","We report on the observation of the ion-induced hcp --> fcc phase transition in 75 nm thick polycrystalline Co films, which were irradiated with 200 keV Xe ions to fluences of 2.5 x 10(13)-8 x 10(15) ions/cm(2) at a temperature of 300 K. Analyses by means of Rutherford Backscattering Spectroscopy (RBS), X-Ray Diffraction (XRD), Magneto-Optical Kerr Effect (MOKE) and Vibrating Sample Magnetometry (VSM) provided information on the film thickness and the implanted Xe profiles, the phase structure, the ion-induced lattice expansion and the magnetic hysteresis, respectively. After film deposition and irradiations up to 4 x 10(14) ions/cm(2), we predominantly found the hcp phase (XRD, uniaxial MOKE pattern) with an in-plane magnetization. The transition to fourfold in-plane magnetization typical of the fcc-phase occurred around a fluence of 2 x 10(15) ions/cm(2). We interpreted these findings as due to rapid cooling of thermal spikes into the metastable Co-fcc phase."],["dc.identifier.doi","10.1209/epl/i2003-00279-7"],["dc.identifier.isi","187118200014"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/44837"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","E D P Sciences"],["dc.relation.issn","0295-5075"],["dc.title","Xenon-ion-induced phase transition in thin Co films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2006Conference Paper
    [["dc.bibliographiccitation.firstpage","700"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Thin Solid Films"],["dc.bibliographiccitation.lastpage","704"],["dc.bibliographiccitation.volume","515"],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Marszalek, M."],["dc.contributor.author","Milinovic, Velimir"],["dc.contributor.author","Tokman, V."],["dc.date.accessioned","2018-11-07T09:05:52Z"],["dc.date.available","2018-11-07T09:05:52Z"],["dc.date.issued","2006"],["dc.description.abstract","[Co(7 nm)/Fe(7 nM)](6) multilayers were electron-beam evaporated onto Si(100) substrates in ultrahigh vacuum and irradiated at room temperature with 200-keV Xe ions, leading to ion beam mixing within the Co/Fe multilayer, but not with the Si substrate. Irradiation-induced changes in structural and magnetic properties were characterized by means of Rutherford backscattering spectroscopy, X-ray diffraction and in-plane magneto-optical Kerr effect. Irradiation with 1 X 10(16) Xe ions/cm(2) induced Co/Fe intermixing to a 1:1 atomic concentration ratio (RBS) and the formation of the Fe50Co50 permendur phase in the intermixed zone (XRD). For lower ion fluences, the coercivity decreased strongly, but then increased slowly for higher fluences. The angular pattern of the relative remanence showed a perfect uniaxial anisotropy. The magnetic energy density was parametrized with the expression E-s/M-s proportional to (K-u1/M-s) sin(2) (phi - phi(0))+(K-u2/M-s) sin(4)(phi - phi(0)), M-s being the saturation magnetization and phi(0) the symmetry angle. The second-order term K-u2/M-s was found to decrease strongly with increasing Xe fluence. (c) 2006 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.tsf.2005.12.238"],["dc.identifier.isi","000241220600077"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/25424"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","12th International Conference on Thin Films"],["dc.relation.eventlocation","BRATISLAVA, SLOVAKIA"],["dc.relation.issn","0040-6090"],["dc.title","Ion beam mixing of Co/Fe multilayers: Magnetic and structural properties"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2004Conference Paper
    [["dc.bibliographiccitation.firstpage","137"],["dc.bibliographiccitation.issue","1-4"],["dc.bibliographiccitation.journal","HYPERFINE INTERACTIONS"],["dc.bibliographiccitation.lastpage","143"],["dc.bibliographiccitation.volume","158"],["dc.contributor.author","Mueller, Gerhard A."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Carpene, Ettore"],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Schaaf, Peter"],["dc.contributor.author","Faupel, J."],["dc.contributor.author","Krebs, Hans-Ulrich"],["dc.date.accessioned","2018-11-07T10:52:38Z"],["dc.date.available","2018-11-07T10:52:38Z"],["dc.date.issued","2004"],["dc.description.abstract","Modifications of magnetic properties upon heavy-ion irradiation have been recently investigated for films of ferromagnetic 3d-elements (Fe, Ni, Co) and alloys (permendur, permalloy), in relation to changes of their microstructure. Here we report on Xe-ion irradiation of a highly textured iron film prepared via pulsed-laser deposition on a MgO(100) single crystal and containing a thin Fe-57 marker layer for magnetic orientation Mossbauer spectroscopy (MOMS). We compare the results with those obtained for a polycrystalline Fe/Si(100) sample produced by electron evaporation and premagnetized before Xe-irradiation in a 300 Oe external field. Characterization of the samples also included magneto-optical Kerr effect (MOKE), Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD)."],["dc.identifier.doi","10.1007/s10751-005-9022-6"],["dc.identifier.isi","000235281400023"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/49159"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.publisher.place","Dordrecht"],["dc.relation.conference","Joint Meeting of the 13th International Conference on Hyperfine Interactions/17th International Symposium on Nuclear Quadrupole Interactions (HFI/NQI 2004)"],["dc.relation.eventlocation","Bonn, GERMANY"],["dc.relation.issn","0304-3843"],["dc.title","Magnetic texturing of xenon-irradiated iron films studied by magnetic orientation Mossbauer spectroscopy"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2014Journal Article
    [["dc.bibliographiccitation.firstpage","158"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","163"],["dc.bibliographiccitation.volume","295"],["dc.contributor.author","Novakovic, M."],["dc.contributor.author","Popovic, Mila"],["dc.contributor.author","Zhang, K."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Bibic, N."],["dc.date.accessioned","2018-11-07T09:42:33Z"],["dc.date.available","2018-11-07T09:42:33Z"],["dc.date.issued","2014"],["dc.description.abstract","The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved."],["dc.identifier.doi","10.1016/j.apsusc.2014.01.020"],["dc.identifier.isi","000331614300023"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/33985"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.relation.issn","1873-5584"],["dc.relation.issn","0169-4332"],["dc.title","Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2005Conference Paper
    [["dc.bibliographiccitation.firstpage","107"],["dc.bibliographiccitation.issue","1-4"],["dc.bibliographiccitation.journal","HYPERFINE INTERACTIONS"],["dc.bibliographiccitation.lastpage","121"],["dc.bibliographiccitation.volume","160"],["dc.contributor.author","Gupta, R."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Mueller, Gerhard A."],["dc.contributor.author","Schaaf, Peter"],["dc.contributor.author","Zhang, K."],["dc.date.accessioned","2018-11-07T08:40:14Z"],["dc.date.available","2018-11-07T08:40:14Z"],["dc.date.issued","2005"],["dc.description.abstract","Thin polycrystalline films of permalloy (Ni79Fe21) and permendur (Co50Fe50) have been irradiated with Xe-ions to fluences of 10(14)-10(16) ions/cm(2). Ion-induced structural and magnetic modifications have been measured by grazing angle X-ray diffraction, Rutherford backscattering and magneto-optical Kerr effect. In the case of permendur, the Xe-ion implantation first reduced the coercivity, because of stress relaxation, while higher ion fluences increased the coercivity due to pinning centers generated in the film. The ion irradiation aligned the in-plane easy axis of the magnetization along the direction of the external magnetic field during implantation. Phase shifts obtained from magnetic force microscopy confirmed these modifications. The effects of Xe-ion irradiation in permalloy films are much weaker and underline the importance of magnetostriction in the variation of the coercivity and anisotropy."],["dc.identifier.doi","10.1007/s10751-005-9153-9"],["dc.identifier.isi","234204300010"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/19180"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.publisher.place","Dordrecht"],["dc.relation.conference","International Workshop on Nanomaterials, Magnetic Ions and Magnetic Semiconductors Studies mostly by Hyperfine Interactions"],["dc.relation.eventlocation","M S Univ Baroda, Phys Dept, Baroda, INDIA"],["dc.relation.issn","0304-3843"],["dc.title","Xenon-ion induced magnetic and structural modifications of ferromagnetic alloys"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2004Conference Paper
    [["dc.bibliographiccitation.firstpage","1149"],["dc.bibliographiccitation.journal","Journal of Magnetism and Magnetic Materials"],["dc.bibliographiccitation.lastpage","1151"],["dc.bibliographiccitation.volume","272"],["dc.contributor.author","Kulinska, A."],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Mueller, Gerhard A."],["dc.contributor.author","Uhrmacher, Michael"],["dc.contributor.author","Zhang, Kun"],["dc.date.accessioned","2018-11-07T10:49:19Z"],["dc.date.available","2018-11-07T10:49:19Z"],["dc.date.issued","2004"],["dc.description.abstract","Perturbed angular correlation of tracer nuclei is sensitive to the size and orientation of the hyperfine field(s) in ferromagnetic films. We report on PAC measurements for In-111 nuclei in 75 nm Ni films irradiated with 200 keV Xe ions. In particular, we investigated the effects of magnetostriction when bending the samples and of the In-111 tracer implantation itself. (C) 2004 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jmmm.2003.12.018"],["dc.identifier.isi","000222236700170"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/48399"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","International Conference on Magnetism (ICM 2003)"],["dc.relation.eventlocation","Rome, ITALY"],["dc.relation.issn","0304-8853"],["dc.title","Magnetic texture in Ni films after Xe ion implantations measured with perturbed angular correlation spectroscopy"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]
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  • 2007Conference Paper
    [["dc.bibliographiccitation.firstpage","8503"],["dc.bibliographiccitation.issue","19-20"],["dc.bibliographiccitation.journal","Surface and Coatings Technology"],["dc.bibliographiccitation.lastpage","8505"],["dc.bibliographiccitation.volume","201"],["dc.contributor.author","Warang, Trupti N."],["dc.contributor.author","Sahoo, P. K."],["dc.contributor.author","Joshi, K. U."],["dc.contributor.author","Kothari, D. C."],["dc.contributor.author","Zhang, Kun"],["dc.contributor.author","Milinovic, Velimir"],["dc.contributor.author","Lieb, Klaus-Peter"],["dc.contributor.author","Klaumuenzer, S."],["dc.date.accessioned","2018-11-07T10:59:38Z"],["dc.date.available","2018-11-07T10:59:38Z"],["dc.date.issued","2007"],["dc.description.abstract","Cathodoluminescence measurements were performed on swift heavy ion irradiated and annealed Au/SiO2/p-Si structures. 5 nm thick Au film was deposited on 500 nm SiO2 thermally grown on [100] oriented p-type Si wafers. The Au/SiO2/P-Si structures were irradiated using 350 MeV An ions at fluences of 1-4 x 10(13) cm(-2) and annealed in vacuum at 1050 K for 8 h. The structures were characterised via Rutherford backscattering spectrometry and CL before and after annealing. The CL spectra mainly consist of an ultraviolet peak (4.3 eV) arising from Neutral Oxygen Vacancies (NOVs) and a blue-violet peak (2.7 eV) due to E' centres as well as NOVs, both of which are oxygen-deficient centres. It is concluded that swift heavy ion irradiations create P centres in SiO2 and annealing transforms E' centres into NOW As NOVs are thought to be precursors to the formation of Si-nanoclusters (Si-nc), the present study leads to the knowledge of a possible synthesis route to form Si-nc. (C) 2007 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.surfcoat.2006.02.071"],["dc.identifier.isi","000249034000104"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50753"],["dc.language.iso","en"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","14th International Conference on Surface Modification by Ion Beams (SMMIB 05)"],["dc.relation.eventlocation","Kusadasi, TURKEY"],["dc.relation.issn","0257-8972"],["dc.title","Cathodolurninescence studies of swift heavy ion irradiated Au/SiO2/P-Si structures"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]
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