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Rizzi, Angela
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Rizzi, Angela
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Rizzi, Angela
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Rizzi, A.
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2012Journal Article [["dc.bibliographiccitation.artnumber","012108"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","AIP Advances"],["dc.bibliographiccitation.volume","2"],["dc.contributor.author","Broxtermann, Daniel"],["dc.contributor.author","Sivis, Murat"],["dc.contributor.author","Malindretos, Jörg"],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:12:36Z"],["dc.date.available","2018-11-07T09:12:36Z"],["dc.date.issued","2012"],["dc.description.abstract","We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm(2)V(-1)s(-1) at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth. This paper gives a compact overview of the experimental key aspects that significantly affect the low temperature electron mobility in AlGaN/GaN heterostructures. Growth at the transition towards Ga droplet formation produced the best results. A quantitative analysis of the magnetoresistance confirmes scattering at dislocations as the dominant scattering process at low temperature. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi: 10.1063/1.3679149]"],["dc.description.sponsorship","DFG [SFB 602]"],["dc.identifier.doi","10.1063/1.3679149"],["dc.identifier.fs","590413"],["dc.identifier.isi","000302225400026"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/9558"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/26975"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.relation.issn","2158-3226"],["dc.relation.orgunit","Fakultät für Physik"],["dc.title","MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]Details DOI WOS2013Journal Article [["dc.bibliographiccitation.artnumber","UNSP 053045"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","15"],["dc.contributor.affiliation","Urban, A;"],["dc.contributor.affiliation","Malindretos, J;"],["dc.contributor.affiliation","Klein-Wiele, J-H;"],["dc.contributor.affiliation","Simon, P;"],["dc.contributor.affiliation","Rizzi, A;"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Klein-Wiele, J-H"],["dc.contributor.author","Simon, P."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T09:24:33Z"],["dc.date.available","2018-11-07T09:24:33Z"],["dc.date.issued","2013"],["dc.date.updated","2022-02-10T10:13:19Z"],["dc.description.abstract","Selective area growth of GaN nanocolumns (NCs) by molecular beam epitaxy on laser ablated pre-patterned GaN(0001) templates is shown to provide regular arrays of Ga-polar NCs. The Ga diffusion-assisted growth mechanism is analyzed and the experiments suggest that the effective growth conditions vary with the height of the NCs due to Ga diffusion on the mask and the NC sidewalls, ranging from N-rich up to stoichiometry. The obtained morphology with semipolar facets at the tip is discussed within the framework of equilibrium thermodynamics, which provides a consistent picture also for the growth of N-polar NCs with flat tips. The structural investigation reveals almost defect-free semipolar {1 (1) over bar 02} GaN facets at the top of the NCs, which is known to be a promising way of producing templates for nanoscale semipolar GaN-based heterostructures. Almost no polarization discontinuity is expected for InxGa1-xN/GaN interfaces on such facets."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2013"],["dc.identifier.doi","10.1088/1367-2630/15/5/053045"],["dc.identifier.eissn","1367-2630"],["dc.identifier.fs","599188"],["dc.identifier.isi","000319656300003"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/9122"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/29854"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.notes.oa","gold"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","IOP Publishing"],["dc.relation","info:eu-repo/grantAgreement/EC/FP7/265073/EU//NANOWIRING"],["dc.relation.issn","1367-2630"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 3.0"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Ga-polar GaN nanocolumn arrays with semipolar faceted tips"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]Details DOI WOS2011Journal Article [["dc.bibliographiccitation.artnumber","081201"],["dc.bibliographiccitation.issue","8"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","84"],["dc.contributor.author","Roever, Martin"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Bedoya-Pinto, Amilcar"],["dc.contributor.author","Rizzi, Angela"],["dc.contributor.author","Rauch, Christian"],["dc.contributor.author","Tuomisto, Filip"],["dc.date.accessioned","2018-11-07T08:53:17Z"],["dc.date.available","2018-11-07T08:53:17Z"],["dc.date.issued","2011"],["dc.description.abstract","We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10(19) cm(-3) might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN: Gd. Oxygen codoping of GaN: Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN."],["dc.description.sponsorship","Deutsche Forschungs Gesellschaft [SFB 602]"],["dc.identifier.doi","10.1103/PhysRevB.84.081201"],["dc.identifier.isi","000293774600001"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/7962"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/22370"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.relation.issn","1098-0121"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 3.0"],["dc.title","Tracking defect-induced ferromagnetism in GaN:Gd"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]Details DOI WOS2011Journal Article [["dc.bibliographiccitation.firstpage","398"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Nano Letters"],["dc.bibliographiccitation.lastpage","401"],["dc.bibliographiccitation.volume","11"],["dc.contributor.author","Urban, Arne"],["dc.contributor.author","Malindretos, Joerg"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Rizzi, Angela"],["dc.date.accessioned","2018-11-07T08:59:27Z"],["dc.date.available","2018-11-07T08:59:27Z"],["dc.date.issued","2011"],["dc.description.abstract","(Ga,Mn)N nanowires were grown by plasma-assisted molecular beam epitaxy on p-type Si(111) substrates. Chemical composition and elemental distribution of single nanowires were analyzed by energy dispersive X-ray spectroscopy revealing an inhomogeneous Mn distribution decreasing from the surface of the nanowires toward the inner core region. The average Mn concentration within the nanowires is found to be below 1%. High-resolution transmission electron microscopy shows the presence of planar defects perpendicular to the growth direction in undoped and Mn-doped GaN nanowires. The density of planar defects dramatically increases under Mn supply."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft [SFB 602]"],["dc.identifier.doi","10.1021/nl1030002"],["dc.identifier.isi","000287049100016"],["dc.identifier.pmid","21171626"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/7067"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/23899"],["dc.notes","NANOWIRING"],["dc.notes.intern","pdf-Datei durch Autor via Hochladeservice zum EU-Projekt NANOWIRING (s. Textdatei) erhalten. Witt 30.01.12"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Chemical Soc"],["dc.relation","info:eu-repo/grantAgreement/EC/FP7/265073/EU//NANOWIRING"],["dc.relation.issn","1530-6992"],["dc.relation.issn","1530-6984"],["dc.relation.orgunit","Fakultät für Physik"],["dc.title","Structure and Elemental Distribution of (Ga,Mn)N Nanowires"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]Details DOI PMID PMC WOS