Seibt, Michael

[["dc.bibliographiccitation.firstpage","1203"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.lastpage","1207"],["dc.bibliographiccitation.volume","93"],["dc.contributor.author","Gerhards, Inga"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Gibhardt, Holger"],["dc.date.accessioned","2018-11-07T10:41:39Z"],["dc.date.available","2018-11-07T10:41:39Z"],["dc.date.issued","2003"],["dc.description.abstract","Amorphous carbon thin films containing 0-50 at. % Cu have been grown by mass selected ion beam deposition in order to synthesize isolated Cu nanoparticles within a diamond-like matrix. Raman spectroscopy and x-ray photoelectron spectroscopy show that the sp(3) content of the matrix decreases with increasing Cu content. Simultaneously, the mean particle size of the embedded Cu nanocrystals increases, as x-ray diffraction and transmission electron microscopy analysis reveal. There is apparently no dependence of the matrix structure on the Cu+ ion energy, while the Cu content is strongly influenced by this deposition parameter. (C) 2003 American Institute of Physics."],["dc.identifier.doi","10.1063/1.1531211"],["dc.identifier.isi","000180134200065"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/46593"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","0021-8979"],["dc.title","Ion beam synthesis of diamond-like carbon thin films containing copper nanocrystals"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","1356"],["dc.bibliographiccitation.issue","8-9"],["dc.bibliographiccitation.journal","NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS"],["dc.bibliographiccitation.lastpage","1359"],["dc.bibliographiccitation.volume","267"],["dc.contributor.author","Zutz, Hayo"],["dc.contributor.author","Lyzwa, Dominika"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Hofsaess, Hans"],["dc.date.accessioned","2018-11-07T08:30:31Z"],["dc.date.available","2018-11-07T08:30:31Z"],["dc.date.issued","2009"],["dc.description.abstract","The quasi-simultaneous deposition of low energy-mass-selected C+ and metal(+) ions leads to the formation of metal-carbon nanocomposites. In the case of C+ and Cu+ deposition, a homogeneous distribution of small copper clusters in an amorphous carbon matrix is expected. However, at a certain C+/Cu+ fluence ratio and energy range, alternately metal-rich and metal-deficient layers in an amorphous carbon matrix with periods in the nm range develop have been observed. The metal-rich layers consist of densely distributed crystalline Cu particles while the metal-deficient layers are amorphous and contain only few and small Cu clusters. The formation of multilayers can be described by an interplay of sputtering, surface segregation, ion induced diffusion, and the stability of small clusters against ion bombardment. This formation has been investigated for the a-C:Cu system with respect to the ion energy and the C+/Cu+ fluence ratio. The sputter coefficient S-M = r(f)S(CCu) + S-CuCu is the parameter to switch between layer growth (S-M < 1) and homogeneous cluster distribution (S-M > 1). (C) 2009 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.nimb.2009.01.046"],["dc.identifier.isi","000266519900037"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/16907"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","16th International Conference on Ion Beam Modification of Materials"],["dc.relation.eventlocation","Dresden, GERMANY"],["dc.relation.issn","0168-583X"],["dc.title","Self-organized formation of layered carbon-copper nanocomposite films by ion deposition"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","034307"],["dc.bibliographiccitation.issue","3"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.volume","98"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Shang, N. G."],["dc.contributor.author","Gerhards, Inga"],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T10:35:14Z"],["dc.date.available","2018-11-07T10:35:14Z"],["dc.date.issued","2005"],["dc.description.abstract","Tetrapod zinc oxide (T-ZnO) nanorods have been synthesized by evaporation and recondensation of metallic Zn under ambient conditions. The total sizes of the T-ZnO nanostructures range from 300 nm to 15 mu m with leg diameters of about 30 to 650 nm, depending on the deposition temperature. A detailed high-resolution electron microscopy analysis showed that the center core of T-ZnO nanorods consists of four hexagonal grains with a twinlike relation. The nucleation and growth mechanism has been generated on the basis of energy considerations during a phase transition from a fullerenelike ZnO cluster to a nanometer-sized tetrahedron, which is directly visible in our high-resolution transmission electron microscopy investigations. (c) 2005 American Institute of Physics."],["dc.identifier.doi","10.1063/1.1997290"],["dc.identifier.isi","000231246100092"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/45045"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","0021-8979"],["dc.title","Nucleation mechanism of the seed of tetrapod ZnO nanostructures"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","1877"],["dc.bibliographiccitation.issue","10-11"],["dc.bibliographiccitation.journal","Diamond and Related Materials"],["dc.bibliographiccitation.lastpage","1882"],["dc.bibliographiccitation.volume","12"],["dc.contributor.author","Eyhusen, S."],["dc.contributor.author","Gerhards, Inga"],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Blomenhofer, M."],["dc.contributor.author","Zweck, J."],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T10:35:41Z"],["dc.date.available","2018-11-07T10:35:41Z"],["dc.date.issued","2003"],["dc.description.abstract","Boron nitride (BN) film growth of mass selected B and N ion deposition has been investigated in a wide range of ion energies. We observed an ion energy window for the cubic BN (c-BN) growth between 75 eV and at least 15/20 keV. The observed low energy threshold for the growth of c-BN is lower than the c-BN nucleation threshold and fits well to the cylindrical spike model. On the high-energy side, c-BN growth was achieved using 15 keV nitrogen and 20 keV boron ions. Additionally, we studied the stability of c-BN under ion irradiation. These studies showed that cubic boron nitride is extremely stable under ion irradiation. It remains stable under nitrogen and argon ion irradiation with energies between 10 and 30 keV up to fluences approximately 10(17) cm(-2). However, if the c-BN/t-BN interface is irradiated, a complete transition to sp(2)-bonded BN already occurs at a low ion fluence of 10(16) cm(-2). (C) 2003 Elsevier Science B.V. All rights reserved."],["dc.identifier.doi","10.1016/S0925-9635(03)00210-3"],["dc.identifier.isi","000187427300047"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/45148"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","8th International Conference on New Diamond Science and Technology"],["dc.relation.eventlocation","VICTORIA, AUSTRALIA"],["dc.relation.issn","0925-9635"],["dc.title","Ion energy thresholds and stability of cubic boron nitride"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","3215"],["dc.bibliographiccitation.issue","13"],["dc.bibliographiccitation.journal","Nanotechnology"],["dc.bibliographiccitation.lastpage","3218"],["dc.bibliographiccitation.volume","17"],["dc.contributor.author","Shang, N. G."],["dc.contributor.author","Vetter, Ulrich"],["dc.contributor.author","Gerhards, Inga"],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T09:32:23Z"],["dc.date.available","2018-11-07T09:32:23Z"],["dc.date.issued","2006"],["dc.description.abstract","Three broad cathodoluminescence bands centred at similar to 2.02 eV ( red), similar to 2.78 eV ( blue), and similar to 3.45 eV ( ultraviolet) have been observed from silica nanowires synthesized by thermal evaporation at high temperature. The luminescence intensities of both the red and ultraviolet bands decrease upon electron-beam irradiation, while the intensity of the blue band increases with both irradiation time and specimen temperature. The red, blue, and ultraviolet bands are identified as radiative transitions involving the following centres: nonbridging oxygen hole centres, oxygen-deficient centres, and peroxy linkage. The varying time- and temperature-dependent luminescence intensities can be explained by the mutual transformation of these defects, which is driven by the irradiation- and heat-induced migration and desorption of radiolytic oxygen."],["dc.identifier.doi","10.1088/0957-4484/17/13/023"],["dc.identifier.isi","000238259000023"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/31747"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Iop Publishing Ltd"],["dc.relation.issn","0957-4484"],["dc.title","Luminescence centres in silica nanowires"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","PII S0257-8972(02)00230-X"],["dc.bibliographiccitation.firstpage","114"],["dc.bibliographiccitation.journal","Surface and Coatings Technology"],["dc.bibliographiccitation.lastpage","119"],["dc.bibliographiccitation.volume","158"],["dc.contributor.author","Gerhards, Inga"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Vetter, Ulrich"],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Gibhardt, Holger"],["dc.contributor.author","Eckold, Goetz"],["dc.contributor.author","Li, Q."],["dc.contributor.author","Lee, S. T."],["dc.contributor.author","Huang, Yue-Lin"],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T10:08:52Z"],["dc.date.available","2018-11-07T10:08:52Z"],["dc.date.issued","2002"],["dc.description.abstract","We investigated the synthesis of metallic nanoparticles during growth of an amorphous carbon matrix using mass selected ion beam deposition of carbon and metal ions. By varying the carbon-to-metal ion ratio, a-C:Cu and a-C:Ag films with metal concentrations between 0 and 50 at.% were grown at room temperature on Si substrates by co-deposition of low energy mass-selected C-12(+), Cu-63(+) and Ag-107,109(+) ions. X-ray diffraction and transmission electron microscopy reveal metal particles with diameters of a few nanometers. The matrix is diamond-like with mainly sp(3)-bonded carbon at low metal concentrations and becomes graphitic for metal concentrations exceeding 10 at.%. Whereas a large fraction of the deposited Cu ions are incorporated into the films, most of the deposited Ag ions have disappeared. The residual Ag accumulates at the surface and at the C/Si interface. Furthermore, the interface roughness of a-C:Ag films on Si is high. These observations are discussed in terms of the stability of small Ag clusters and Ag induced interface reactions. (C) 2002 Elsevier Science B.V. All rights reserved."],["dc.identifier.doi","10.1016/S0257-8972(02)00230-X"],["dc.identifier.isi","000178482100021"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/39554"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","12th International Conference on Surface Modification of Materials by Ion Beams"],["dc.relation.eventlocation","MARBURG, GERMANY"],["dc.relation.issn","0257-8972"],["dc.title","Ion beam synthesis of amorphous carbon thin films containing metallic nanoclusters"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","245418"],["dc.bibliographiccitation.issue","24"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","70"],["dc.contributor.author","Gerhards, Inga"],["dc.contributor.author","Stillrich, H."],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T10:43:36Z"],["dc.date.available","2018-11-07T10:43:36Z"],["dc.date.issued","2004"],["dc.description.abstract","In the course of thin film growth by co-deposition of low energy mass selected carbon and metal (Au or Fe) ions, an effect of self-organization was found. Although carbon and metal ions were deposited quasi-simultaneously, a multilayer film structure of alternately metal-rich and metal-deficient layers was grown. The period of these layers is of the order of a few nanometers (similar to6-20 nm), and the metal-rich layers consist of metallic nanocrystals. The multilayer formation process is discussed in comparison with earlier studies on C-Cu and C-Ag films with respect to the structural properties of small clusters of the different metals, the influence of sputtering yields, and the deposition parameters. For a variety of compound thin film materials we expect a multilayer structure to develop during simultaneous sputter deposition or ion beam deposition of the components. The suppositions for this scenario are: (a) the deposited elements are immiscible or there are immiscible phases of a compound material, (b) the sputtering yields of the film components imposed by the impinging species are in an appropriate range, and (c) one compound segregates at the surface."],["dc.identifier.doi","10.1103/PhysRevB.70.245418"],["dc.identifier.isi","000226112300101"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/47095"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","American Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Self-organized nanoscale multilayer growth in hyperthermal ion deposition"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","3248"],["dc.bibliographiccitation.issue","7"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.lastpage","3254"],["dc.bibliographiccitation.volume","90"],["dc.contributor.author","Feldermann, H."],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Huang, Yue-Lin"],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T08:35:43Z"],["dc.date.available","2018-11-07T08:35:43Z"],["dc.date.issued","2001"],["dc.description.abstract","In this study we investigate the possibility of nucleating nanocrystalline cubic boron nitride (c-BN) thin films directly onto suitable substrates without the soft turbostratic BN (t-BN) interlayer that is usually observed. This would open a path to the epitaxial growth of c-BN films which is essential particularly for practicable applications in electronic devices. Appropriate substrates are required to exhibit a lattice that matches the c-BN crystallite structure, survives the ion bombardment imperative for c-BN film formation, and is not disturbed by the development of a heterogeneous interface layer. In accordance with these criteria, monocrystalline AlN is selected and employed as a potential substrate for direct c-BN film growth using mass selected ion beam deposition. A detailed examination of the BN/AlN interface microstructure by cross-sectional high-resolution transmission electron microscopy reveals that the AlN crystallinity is indeed retained, with no amorphous layer next to the BN film as commonly observed on Si substrates. Nanocrystalline BN grains with the cubic, and, more frequently, with the wurtzitic structure are found in direct contact with certain regions of the rugged AlN substrate, covering about one-third of its entire surface with no mediating t-BN or other interface layer. The c-BN and w-BN growth areas are textured and exhibit definite preferential orientation relationships with the faceted AlN substrate surface. The consequences of these findings for the understanding of the role of the t-BN interlayer in c-BN film nucleation are discussed. (C) 2001 American Institute of Physics."],["dc.identifier.doi","10.1063/1.1392957"],["dc.identifier.isi","000171135900016"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/18141"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","0021-8979"],["dc.title","Cubic boron nitride thin film heteroepitaxy"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","132405"],["dc.bibliographiccitation.issue","13"],["dc.bibliographiccitation.journal","Applied Physics Letters"],["dc.bibliographiccitation.volume","105"],["dc.contributor.author","Fabretti, Savio"],["dc.contributor.author","Zierold, Robert"],["dc.contributor.author","Nielsch, Kornelius"],["dc.contributor.author","Voigt, Carmen"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Thomas, Andy"],["dc.date.accessioned","2018-11-07T09:35:02Z"],["dc.date.available","2018-11-07T09:35:02Z"],["dc.date.issued","2014"],["dc.description.abstract","Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina-and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy. (C) 2014 AIP Publishing LLC."],["dc.identifier.doi","10.1063/1.4896994"],["dc.identifier.isi","000343031700039"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/32305"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","1077-3118"],["dc.relation.issn","0003-6951"],["dc.title","Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","261"],["dc.bibliographiccitation.issue","1-2"],["dc.bibliographiccitation.journal","NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS"],["dc.bibliographiccitation.lastpage","264"],["dc.bibliographiccitation.volume","242"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Gerhards, Inga"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Hofsass, H."],["dc.contributor.author","Wu, W."],["dc.contributor.author","Ting, J. M."],["dc.date.accessioned","2018-11-07T10:39:34Z"],["dc.date.available","2018-11-07T10:39:34Z"],["dc.date.issued","2006"],["dc.description.abstract","Self-assembled alternating carbon and metal layers have been produced by concurrent deposition of carbon and metal atoms using both dc reactive sputter deposition and mass selected ion beam deposition. High-resolution transmission electron micrographs clearly show the alternating metal-rich and -deficient layers with periodicities in the nanometer scale. The appearance of a multilayer structure and its periodicity strongly depend on the deposition parameters, i.e. the metal species, the provided stoichiometry and the ion energy. Here, we discuss the similarities and differences of the parameters used in both physical vapor deposition methods on the impact on the multilayer structures. (c) 2005 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.nimb.2005.08.032"],["dc.identifier.isi","000236225200069"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/46079"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","14th International Conference on Ion Beam Modification of Materials (IBMM 2004)"],["dc.relation.eventlocation","Pacific Grove, CA"],["dc.relation.issn","0168-583X"],["dc.title","Self-assembled nano-scale multilayer formation using physical vapor deposition methods"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]