Seibt, Michael

[["dc.bibliographiccitation.firstpage","235"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Applied Physics A"],["dc.bibliographiccitation.lastpage","253"],["dc.bibliographiccitation.volume","96"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Khalil, Reda"],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroeter, Wolfgang"],["dc.date.accessioned","2018-11-07T08:27:58Z"],["dc.date.available","2018-11-07T08:27:58Z"],["dc.date.issued","2009"],["dc.description.abstract","Predominant dislocation types in solar silicon are dissociated into 30A degrees- and 90A degrees-partials with reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D band at the stacking fault connecting the two partials, the existence of several intrinsic core defects with deep lying levels has been demonstrated by electron spin resonance. The majority of core defects occur in nonequilibrium situations and, with the exception of a small EPR-signal assigned to a reconstruction defect, vanish after careful annealing above 800A degrees C. There is good evidence now that part of deep levels observed in dislocated silicon is associated with impurities, especially with transition metal impurities. Electron-hole-pair recombination at a dislocation mainly runs via its shallow bands and is strongly increased by impurities bound to its core or in the strain field. The concentration of these impurities can be reduced by gettering processes to such a low level that radiative recombination at dislocations yields a luminescence efficiency of 0.1% at room temperature. A quite coherent picture has emerged for metal impurity precipitation in silicon. Early stages of precipitation in defect-free silicon are characterised by kinetically selected metastable defects forming as a result of large chemical driving forces for precipitation. Such defects are associated with deep level spectra which show the properties of extended multielectron defects. The evolution of the system to energetically more favourable configurations proceeds via ordinary particle coarsening but also via internal ripening, a process reminiscent of the above-mentioned metastable defects. Electronically, the defects evolve into metal-like inclusions which in general seem to act as strong recombination centers for minority carriers. In the presence of dislocations metastable defects quickly transform into equilibrium structures in the course of precipitation or do not form at all. In the presence of several metal impurities silicide precipitates which can be described as solid solutions of the respective metal atoms are observed, which is at least qualitatively in accord with ternary phase diagrams. Like single-metal silicide precipitates, strong minority carrier recombination is also typical for those multi-metal silicide particles."],["dc.identifier.doi","10.1007/s00339-008-5027-8"],["dc.identifier.isi","000266372100025"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/6718"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/16315"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.relation.issn","1432-0630"],["dc.relation.issn","0947-8396"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.title","Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials"],["dc.type","review"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","62"],["dc.bibliographiccitation.journal","Ultramicroscopy"],["dc.bibliographiccitation.lastpage","66"],["dc.bibliographiccitation.volume","200"],["dc.contributor.author","Meyer, Tobias"],["dc.contributor.author","Lopatin, Sergei"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Roddatis, Vladimir"],["dc.date.accessioned","2020-12-10T15:21:40Z"],["dc.date.available","2020-12-10T15:21:40Z"],["dc.date.issued","2019"],["dc.identifier.doi","10.1016/j.ultramic.2019.02.020"],["dc.identifier.issn","0304-3991"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/16700"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/73109"],["dc.language.iso","en"],["dc.notes","Artikel => Postprint / Autorenversion im Journal Ultramicroscopy (10.1016/j.ultramic.2019.02.020, Subskriptionsjournal: 24 Monate Embargo / frei zugänglich ab 27. Feb. 2021 über GoeScholar mit einer CC-BY-NC-ND license )"],["dc.notes.intern","DOI Import GROB-354"],["dc.notes.intern","Merged from goescholar"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation","SFB 1073 | Topical Area Z | Z02 Hochauflösende Charakterisierung von Grenzflächen"],["dc.relation.orgunit","Fakultät für Physik"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","A posteriori synchronization of scanning transmission electron microscopy signals with kilopixel per second acquisition rates"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dc.type.version","submitted_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","113054"],["dc.bibliographiccitation.firstpage","113054"],["dc.bibliographiccitation.issue","11"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","11"],["dc.contributor.affiliation","Kühnemund, L;"],["dc.contributor.affiliation","Edler, T;"],["dc.contributor.affiliation","Kock, I;"],["dc.contributor.affiliation","Seibt, M;"],["dc.contributor.affiliation","Mayr, S G;"],["dc.contributor.author","Kuehnemund, Lisa"],["dc.contributor.author","Edler, T."],["dc.contributor.author","Kock, Iris"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Mayr, Stefan G."],["dc.date.accessioned","2018-11-07T11:21:50Z"],["dc.date.available","2018-11-07T11:21:50Z"],["dc.date.issued","2009"],["dc.date.updated","2022-02-09T15:47:44Z"],["dc.description.abstract","To achieve maximum performance in microscale magnetic shape memory actuation devices epitaxial films several hundred nanometers thick are needed. Epitaxial films were grown on hot MgO substrates (500 degrees C and above) by e-beam evaporation. Structural properties and stress relaxation mechanisms were investigated by high-resolution transmission electron microscopy, in situ substrate curvature measurements and classical molecular dynamics (MD) simulations. The high misfit stress incorporated during Vollmer-Weber growth at the beginning was relaxed by partial or perfect dislocations depending on the substrate temperature. This relaxation allowed the avoidance of a stress-induced breakdown of epitaxy and no thickness limit for epitaxy was found. For substrate temperatures of 690 degrees C or above, the films grew in the fcc austenite phase. Below this temperature, iron precipitates were formed. MD simulations showed how these precipitates influence the movements of partial dislocations, and can thereby explain the higher stress level observed in the experiments in the initial stage of growth for these films."],["dc.description.sponsorship","German DFG [SPP 1239, TP C4]"],["dc.identifier.doi","10.1088/1367-2630/11/11/113054"],["dc.identifier.eissn","1367-2630"],["dc.identifier.isi","000272153400005"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?goescholar/4054"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/55873"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Iop Publishing Ltd"],["dc.relation.issn","1367-2630"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.access","openAccess"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.subject.ddc","530"],["dc.title","Epitaxial growth and stress relaxation of vapor-deposited Fe-Pd magnetic shape memory films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","012009"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Journal of Physics: Conference Series"],["dc.bibliographiccitation.volume","1190"],["dc.contributor.affiliation","Meyer, T;"],["dc.contributor.affiliation","Kressdorf, B;"],["dc.contributor.affiliation","Lindner, J;"],["dc.contributor.affiliation","Peretzki, P;"],["dc.contributor.affiliation","Roddatis, V;"],["dc.contributor.affiliation","Jooss, C;"],["dc.contributor.affiliation","Seibt, M;"],["dc.contributor.author","Meyer, T."],["dc.contributor.author","Kressdorf, B."],["dc.contributor.author","Lindner, J."],["dc.contributor.author","Peretzki, P."],["dc.contributor.author","Roddatis, V."],["dc.contributor.author","Jooss, Christian"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2020-12-10T18:15:51Z"],["dc.date.available","2020-12-10T18:15:51Z"],["dc.date.issued","2019"],["dc.date.updated","2022-04-07T11:26:58Z"],["dc.description.abstract","Abstract Fundamental losses of photovoltaic energy conversion are transmission of sub band gap photons and thermalisation which are the underlying physics of the Shockley-Queisser limit defining maximum conversion efficiency of single-junction solar cells. Strongly correlated materials such as perovskites are promising candidates to exceed this limit by exploiting (i) long wavelength light absorption and (ii) the existence of long-living intraband excitations indicating that harvesting hot excess carriers might be feasible in such systems. In this work, we study pn-heterojunctions produced from Pr1-xCaxMnO3 on SrTi1-yNbyO3 by means of microscopic techniques. Such systems exhibit relevant quantities such as space charge layer width, screening lengths and excess carrier diffusion lengths in the 1-10 nm range which makes the use of standard methods such as electron beam induced current a challenging task. We report scanning transmission electron beam induced current experiments of misfit dislocations at the heterojunction. The dislocation-induced reduction of the charge collection is studied with nanometer spatial resolution. Effects of surface recombination and the heterojunction electric field are discussed."],["dc.identifier.doi","10.1088/1742-6596/1190/1/012009"],["dc.identifier.eissn","1742-6596"],["dc.identifier.issn","1742-6588"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/16699"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/74976"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-354"],["dc.notes.intern","Merged from goescholar"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation","SFB 1073 | Topical Area Z | Z02 Hochauflösende Charakterisierung von Grenzflächen"],["dc.relation.eissn","1742-6596"],["dc.relation.issn","1742-6588"],["dc.relation.orgunit","Fakultät für Physik"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.rights","CC BY 3.0"],["dc.rights.uri","https://creativecommons.org/licenses/by/3.0/"],["dc.title","High-resolution Scanning Transmission EBIC Analysis of Misfit Dislocations at Perovskite pn-Heterojunctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","063046"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","19"],["dc.contributor.author","Ifland, Benedikt"],["dc.contributor.author","Hoffmann, Joerg"],["dc.contributor.author","Kressdorf, Birte"],["dc.contributor.author","Roddatis, Vladimir"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Jooss, Christian"],["dc.date.accessioned","2018-11-07T10:22:28Z"],["dc.date.available","2018-11-07T10:22:28Z"],["dc.date.issued","2017"],["dc.description.abstract","The effect of correlation effects on photovoltaic energy conversion at manganite/titanite heterojunctions is investigated. As a model system we choose a heterostructure consisting of the small polaron absorber Pr0.66Ca0.34MnO3 (PCMO) epitaxially grown on single-crystalline Nb-doped SrTi0.998Nb0.002O3 (STNO) substrates. The high structural and chemical quality of the interfaces is proved by detailed characterization using high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) studies. Spectrally resolved and temperature-dependent photovoltaic measurements show pronounced contributions of both the Jahn-Teller (JT) excitations and the charge transfer (CT) transitions to the photovoltaic effect at different photon energies. A linear temperature dependence of the open-circuit voltage for an excitation in the PCMO manganite is only observed below the charge-ordering temperature, indicating that the diffusion length of the photocarrier exceeds the size of the space charge region. The photovoltaic response is compared to that of a heterojunction of lightly doped Pr0.05Ca0.95MnO3 (CMO)/STNO, where the JT transition is absent. Here, significant contributions of the CT transition to the photovoltaic effect set in below the Neel temperature. We conclude that polaronic correlations and ordering effects are essentials for photovoltaic energy conversion in manganites."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft (DFG) [SFB1073]"],["dc.description.sponsorship","Open-Access-Publikationsfonds 2017"],["dc.identifier.doi","10.1088/1367-2630/aa6c22"],["dc.identifier.isi","000404761900009"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/14592"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/42283"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","PUB_WoS_Import"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation.issn","1367-2630"],["dc.relation.orgunit","Fakultät für Physik"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.rights","CC BY 4.0"],["dc.title","Contribution of Jahn-Teller and charge transfer excitations to the photovoltaic effect of manganite/titanite heterojunctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","Physical Review Applied"],["dc.bibliographiccitation.volume","14"],["dc.contributor.author","Kressdorf, B."],["dc.contributor.author","Meyer, T."],["dc.contributor.author","Belenchuk, A."],["dc.contributor.author","Shapoval, O."],["dc.contributor.author","ten Brink, M."],["dc.contributor.author","Melles, S."],["dc.contributor.author","Ross, U."],["dc.contributor.author","Hoffmann, J."],["dc.contributor.author","Moshnyaga, Vasily"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Blöchl, Peter"],["dc.contributor.author","Jooss, Christian"],["dc.date.accessioned","2021-04-14T08:31:35Z"],["dc.date.available","2021-04-14T08:31:35Z"],["dc.date.issued","2020"],["dc.description.abstract","Harvesting of solar energy by hot carriers from optically induced intraband transitions offers new perspectives for photovoltaic energy conversion. Clearly, mechanisms slowing down hot-carrier thermalization constitute a fundamental core of such pathways of third-generation photovoltaics. The intriguing concept of hot polarons stabilized by long-range phonon correlations in charge-ordered strongly correlated three-dimensional metal-oxide perovskite films has emerged and been demonstrated for Pr0.7Ca0.3MnO3 at low temperature. In this work, a tailored approach to extending such processes to room temperature is presented. It consists of a specially designed epitaxial growth of two-dimensional Ruddlesden-Popper Pr0.5Ca1.5MnO4 films on Nb:SrTiO3 with a charge-ordering transition at TCO ∼ 320 K. This opens the route to a different phonon-bottleneck strategy of slowing down carrier relaxation by strong coupling of electrons to cooperative lattice modes."],["dc.identifier.doi","10.1103/PhysRevApplied.14.054006"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/83645"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-399"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area A | A02 Verständnis und Manipulation von Dissipationskanälen des Energietransports"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation","SFB 1073 | Topical Area B | B03 Relaxation, Thermalisierung, Transport und Kondensation in hochangeregten Festkörpern"],["dc.relation","SFB 1073 | Topical Area Z | Z02 Hochauflösende Charakterisierung von Grenzflächen"],["dc.relation.eissn","2331-7019"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.rights","CC BY 4.0"],["dc.title","Room-Temperature Hot-Polaron Photovoltaics in the Charge-Ordered State of a Layered Perovskite Oxide Heterojunction"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"],["local.message.claim","2022-01-20T08:58:36.159+0000|||rp114901|||submit_approve|||dc_contributor_author|||None"]]

[["dc.bibliographiccitation.artnumber","012006"],["dc.bibliographiccitation.firstpage","012006"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Journal of Physics: Conference Series"],["dc.bibliographiccitation.volume","1190"],["dc.contributor.affiliation","Medvedev, O S;"],["dc.contributor.affiliation","Vyvenko, O F;"],["dc.contributor.affiliation","Ubyivovk, E V;"],["dc.contributor.affiliation","Shapenkov, S V;"],["dc.contributor.affiliation","Seibt, M;"],["dc.contributor.author","Medvedev, O. S."],["dc.contributor.author","Vyvenko, O. F."],["dc.contributor.author","Ubyivovk, E. V."],["dc.contributor.author","Shapenkov, S. V."],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2020-12-10T18:15:51Z"],["dc.date.available","2020-12-10T18:15:51Z"],["dc.date.issued","2019"],["dc.date.updated","2022-04-07T11:19:45Z"],["dc.description.abstract","Abstract Straight segments of a-screw dislocations introduced by scratching of basal (0001) of intentionally undoped low-ohmic GaN radiate a doublet of narrow luminescent lines in the spectral region at about 3.1-3.2 eV while the dislocation intersection points possess luminescence band at about 3.3 eV. Transmission electron microscopy reveals that the dislocation cores are dissociated into two 300 partials separated by stacking fault (SF) ribbon with the width of 4-6 nm width and that the dislocation nodes contain extended SF of sizes of 25-30 nm. Dislocation-related luminescence (DRL) is ascribed to exciton bound by the states of partial dislocation cores and of SF quantum well. The increase of the SF lateral sizes is assumed to cause the DRL spectral shift between straight dislocations and their nodes due to the system dimensionality transition from 1D to 2D respectively."],["dc.identifier.doi","10.1088/1742-6596/1190/1/012006"],["dc.identifier.eissn","1742-6596"],["dc.identifier.issn","1742-6588"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/74975"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-354"],["dc.relation.eissn","1742-6596"],["dc.relation.issn","1742-6588"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Extended core structure and luminescence of a-screw dislocations in GaN"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","035006"],["dc.bibliographiccitation.issue","3"],["dc.bibliographiccitation.journal","Semiconductor Science and Technology"],["dc.bibliographiccitation.volume","35"],["dc.contributor.affiliation","Spende, Hendrik;"],["dc.contributor.affiliation","Margenfeld, Christoph;"],["dc.contributor.affiliation","Meyer, Tobias;"],["dc.contributor.affiliation","Clavero, Irene Manglano;"],["dc.contributor.affiliation","Bremers, Heiko;"],["dc.contributor.affiliation","Hangleiter, Andreas;"],["dc.contributor.affiliation","Seibt, Michael;"],["dc.contributor.affiliation","Waag, Andreas;"],["dc.contributor.affiliation","Bakin, Andrey;"],["dc.contributor.author","Spende, Hendrik"],["dc.contributor.author","Margenfeld, Christoph"],["dc.contributor.author","Meyer, Tobias"],["dc.contributor.author","Clavero, Irene Manglano"],["dc.contributor.author","Bremers, Heiko"],["dc.contributor.author","Hangleiter, Andreas"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Waag, Andreas"],["dc.contributor.author","Bakin, Andrey"],["dc.date.accessioned","2020-12-10T18:15:47Z"],["dc.date.available","2020-12-10T18:15:47Z"],["dc.date.issued","2020"],["dc.date.updated","2022-02-09T13:18:21Z"],["dc.description.abstract","Abstract Plasma profiling time of flight mass spectrometry (PP-TOFMS) has recently gained interest as it enables the elemental profiling of semiconductor structures with high depth resolution in short acquisition times. As recently shown by Tempez et al PP-TOFMS can be used to obtain the composition within structures of modern field effect transistors [1]. There, the results were compared to conventional SIMS measurements. In the present study, we compare PP-TOFMS measurements of an Al-/In-/GaN quantum well multi stack to established micro- and nanoanalysis techniques like cathodoluminescence (CL), scanning transmission electron microscopy (STEM), energy dispersive x-ray spectroscopy (EDX) and x-ray diffraction (XRD). We show that PP-TOFMS is able to resolve the layer structure of the sample even more than 500 nm deep into the sample and allows the determination of a relative elemental composition with an accuracy of about 10 rel%. Therefore, it is an extremely rapid alternative method to obtain semiconductor elemental depth profiles without the expensive and time consuming sample preparation required for TEM. Besides, PP-TOFMS offers better depth resolution and more elemental information than, for example, electrochemical capacitance–voltage (ECV) evaluations, since all elements are detected in parallel and not only electrically (ECV) or optically (CL) active elements are observed."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft https://doi.org/10.13039/501100001659"],["dc.description.sponsorship","Niedersächsische Ministerium für Wissenschaft und Kultur (N-MWK)https://doi.org/10.13039/100011937"],["dc.description.sponsorship","Quantum Frontiers"],["dc.identifier.doi","10.1088/1361-6641/ab6ac0"],["dc.identifier.eissn","1361-6641"],["dc.identifier.issn","0268-1242"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/74954"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-354"],["dc.publisher","IOP Publishing"],["dc.rights.uri","http://creativecommons.org/licenses/by/3.0/"],["dc.title","Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer range"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","2100464"],["dc.bibliographiccitation.journal","Small methods"],["dc.contributor.author","Meyer, Tobias"],["dc.contributor.author","Kressdorf, Birte"],["dc.contributor.author","Roddatis, Vladimir V."],["dc.contributor.author","Hoffmann, Jörg"],["dc.contributor.author","Jooss, Christian"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2021-09-01T06:42:46Z"],["dc.date.available","2021-09-01T06:42:46Z"],["dc.date.issued","2021"],["dc.description.abstract","The rich phase diagram of bulk Pr1−xCaxMnO3 resulting in a high tunability of physical properties gives rise to various studies related to fundamental research as well as prospective applications of the material. Importantly, as a consequence of strong correlation effects, electronic and lattice degrees of freedom are vigorously coupled. Hence, it is debatable whether such bulk phase diagrams can be transferred to inherently strained epitaxial thin films. In this paper, the structural orthorhombic to pseudo-cubic transition for x = 0.1 is studied in ion-beam sputtered thin films and differences to the respective bulk system are pointed out by employing in situ heating nano-beam electron diffraction to follow the temperature dependence of lattice constants. In addition, it is demonstrated that controlling the environment during heating, that is, preventing oxygen loss, is crucial in order to avoid irreversible structural changes, which is expected to be a general problem of compounds containing volatile elements under non-equilibrium conditions."],["dc.identifier.doi","10.1002/smtd.202100464"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/89140"],["dc.language.iso","en"],["dc.notes.intern","DOI-Import GROB-455"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation","SFB 1073 | Topical Area Z | Z02 Hochauflösende Charakterisierung von Grenzflächen"],["dc.relation.eissn","2366-9608"],["dc.relation.issn","2366-9608"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.rights","CC BY-NC-ND 4.0"],["dc.title","Phase Transitions in a Perovskite Thin Film Studied by Environmental In Situ Heating Nano‐Beam Electron Diffraction"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","582"],["dc.bibliographiccitation.journal","Energy Procedia"],["dc.bibliographiccitation.lastpage","588"],["dc.bibliographiccitation.volume","38"],["dc.contributor.author","Krenckel, Patricia"],["dc.contributor.author","Saring, Philipp"],["dc.contributor.author","Falkenberg, Marie A."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2019-07-09T11:40:13Z"],["dc.date.available","2019-07-09T11:40:13Z"],["dc.date.issued","2013"],["dc.description.abstract","In order to adjust temperature treatments during solar cell processing to multicrystalline silicon, the interactions of metal impurities in multicrystalline silicon with extended defects like grain boundaries have to be understood. For this purpose, we investigate neighboring wafers of block-cast multicrystalline silicon intentionally doped with iron during crystal growth. Samples are investigated with LBIC after aluminum gettering (AlG) experiments with an Al layer only on parts of the sample at different temperatures. LBIC data are quantitatively analyzed using twodimensional gettering simulations and pattern recognition techniques combined with multivariate statistics. LBICimages and simulations show pronounced regions of reduced excess carrier recombination around grain boundaries (denuded zone) in uncovered regions. This can be attributed to impurity accumulation at grain boundaries and their related depletion in the adjacent bulk. In covered regions, no denuded zones are observed. Temperature variation provides evidence that our experiments are mainly in the regime where gettering efficiency is limited by impurity precipitate dissolution, unless the temperature is chosen well above the solubility temperature corresponding to the average iron concentration."],["dc.identifier.doi","10.1016/j.egypro.2013.07.320"],["dc.identifier.fs","601043"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/10765"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/58115"],["dc.language.iso","en"],["dc.notes.intern","Merged from goescholar"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY-NC-ND 3.0"],["dc.rights.access","openAccess"],["dc.rights.uri","http://creativecommons.org/licenses/by-nc-nd/3.0/"],["dc.title","Interaction of Iron with Extended Defects in Multicrystalline Silicon Studied by Local Gettering"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]