Peretzki, Patrick

[["dc.bibliographiccitation.artnumber","124308"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.volume","118"],["dc.contributor.author","Fricke-Begemann, Thomas"],["dc.contributor.author","Wang, N."],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Ihlemann, Juergen"],["dc.date.accessioned","2018-11-07T09:51:27Z"],["dc.date.available","2018-11-07T09:51:27Z"],["dc.date.issued","2015"],["dc.description.abstract","Silicon nanocrystals have been generated by laser induced phase separation in SiOx films. A continuous wave laser emitting at 405 nm is focused to a 6 mu m diameter spot on 530 nm thick SiOx films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 x 10(5) W/cm(2), the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the central irradiated region is oxidized to SiO2 and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power. (C) 2015 AIP Publishing LLC."],["dc.identifier.doi","10.1063/1.4931670"],["dc.identifier.isi","000362565800033"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/35919"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","1089-7550"],["dc.relation.issn","0021-8979"],["dc.title","Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiOx films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","138"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","142"],["dc.bibliographiccitation.volume","374"],["dc.contributor.author","Stolzenburg, H."],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Wang, N."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Ihlemann, Juergen"],["dc.date.accessioned","2018-11-07T10:12:33Z"],["dc.date.available","2018-11-07T10:12:33Z"],["dc.date.issued","2016"],["dc.description.abstract","The pulsed UV-laser irradiation of thin noble metal films deposited on glass substrates leads to the incorporation of metal particles in the glass, if a sufficiently high laser fluence is applied. This process is called laser implantation. For the implantation of gold into pure fused silica, high laser fluences (similar to 1 J/cm(2) at 193 nm laser wavelength) are required. Using a SiOx (x approximate to 1) coated SiO2-substrate, the implantation of gold into this coating can be accomplished at significantly lower fluences starting from 0.2 J/cm(2) (comparable to those used for standard glass). Particles with diameters in the range of 10-60 nm are implanted to a depth of about 40 nm as identified by transmission electron microscopy. An additional high temperature annealing step in air leads to the oxidation of SiOx to SiO2, without influencing the depth distribution of particles significantly. Only superficial, weakly bound particles are released and can be wiped away. Absorption spectra show a characteristic plasmon resonance peak at 540 nm. Thus, pure silica glass (SiO2) with near surface incorporated plasmonic particles can be fabricated with this method. Such material systems may be useful for example as robust substrates for surface enhanced Raman spectroscopy (SERS). (C) 2015 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.apsusc.2015.10.092"],["dc.identifier.isi","000375937300023"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/40261"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","Symposium CC on Laser and Plasma Processing for Advanced Applications in Material Science held during the Annual Spring Meeting of the European-Materials-Research-Society (E-MRS)"],["dc.relation.eventlocation","Lille, FRANCE"],["dc.relation.issn","1873-5584"],["dc.relation.issn","0169-4332"],["dc.title","Implantation of plasmonic nanoparticles in SiO2 by pulsed laser irradiation of gold films on SiOx-coated fused silica and subsequent thermal annealing"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","227"],["dc.bibliographiccitation.journal","Journal of Alloys and Compounds"],["dc.bibliographiccitation.lastpage","232"],["dc.bibliographiccitation.volume","707"],["dc.contributor.author","Wang, N."],["dc.contributor.author","Fricke-Begemann, Thomas"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Thiel, Karsten"],["dc.contributor.author","Ihlemann, Juergen"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2018-11-07T10:22:42Z"],["dc.date.available","2018-11-07T10:22:42Z"],["dc.date.issued","2017"],["dc.description.abstract","Laser-irradiation of silicon-rich silicon oxides (SRSO) is a promising technique for spatially well-defined production of silicon nanocrystals (nc-Si) showing room temperature photoluminescence. In this work, we use continuous-wave (CW) laser processing to generate nc-Si in SRSO films on fused silica substrates. One main problem is damage introduced by laser processing which results in a porous layer beneath the original film surface as is consistently shown by electron tomography and energy-dispersive X-ray spectrometry. Processing conditions for damage-free nc-Si formation are identified by systematic variation of laser intensity and measuring the depth of the damaged region by transmission electron microscopy (TEM). By combining TEM imaging and analysis it is shown that the damaged region has a composition close to SiO2 which is due to a predominant loss of silicon rather than an a result of surface oxidation during laser processing. (C) 2016 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jallcom.2016.12.115"],["dc.identifier.isi","000400709800041"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/42320"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","PUB_WoS_Import"],["dc.publisher","Elsevier Science Sa"],["dc.relation.issn","1873-4669"],["dc.relation.issn","0925-8388"],["dc.title","Microstructural analysis of the modifications in substrate-bound silicon-rich silicon oxide induced by continuous wave laser irradiation"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]