Peretzki, Patrick

[["dc.bibliographiccitation.firstpage","1323"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","MATERIALS TRANSACTIONS"],["dc.bibliographiccitation.lastpage","1326"],["dc.bibliographiccitation.volume","56"],["dc.contributor.author","Leutenantsmeyer, Johannes Christian"],["dc.contributor.author","Zbarsky, Vladyslav"],["dc.contributor.author","Ehe, Marvin von der"],["dc.contributor.author","Wittrock, Steffen"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Schuhmann, Henning"],["dc.contributor.author","Thomas, Andy"],["dc.contributor.author","Rott, Karsten"],["dc.contributor.author","Reiss, Günter"],["dc.contributor.author","Kim, Tae Hee"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Münzenberg, Markus"],["dc.date.accessioned","2018-11-07T09:52:11Z"],["dc.date.available","2018-11-07T09:52:11Z"],["dc.date.issued","2015"],["dc.description.abstract","The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3 kA/cm(2) is observed and the thermally activated switching probability distribution is discussed."],["dc.identifier.doi","10.2320/matertrans.MA201570"],["dc.identifier.isi","000363364300004"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36066"],["dc.language.iso","en"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Japan Inst Metals"],["dc.publisher.place","Sendai"],["dc.relation.conference","2nd International Symposium on Nano Materials, Technology and Applications (NANOMATA)"],["dc.relation.eventlocation","Hanoi, VIETNAM"],["dc.relation.issn","1347-5320"],["dc.relation.issn","1345-9678"],["dc.title","Spin-Transfer Torque Switching at Ultra Low Current Densities"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","132405"],["dc.bibliographiccitation.issue","13"],["dc.bibliographiccitation.journal","Applied Physics Letters"],["dc.bibliographiccitation.volume","105"],["dc.contributor.author","Fabretti, Savio"],["dc.contributor.author","Zierold, Robert"],["dc.contributor.author","Nielsch, Kornelius"],["dc.contributor.author","Voigt, Carmen"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Thomas, Andy"],["dc.date.accessioned","2018-11-07T09:35:02Z"],["dc.date.available","2018-11-07T09:35:02Z"],["dc.date.issued","2014"],["dc.description.abstract","Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina-and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy. (C) 2014 AIP Publishing LLC."],["dc.identifier.doi","10.1063/1.4896994"],["dc.identifier.isi","000343031700039"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/32305"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","1077-3118"],["dc.relation.issn","0003-6951"],["dc.title","Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","1350002"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","SPIN"],["dc.bibliographiccitation.volume","3"],["dc.contributor.author","Leutenantsmeyer, Johannes Christian"],["dc.contributor.author","Walter, M."],["dc.contributor.author","Zbarsky, Vladyslav"],["dc.contributor.author","Muezenberg, M."],["dc.contributor.author","Gareev, R."],["dc.contributor.author","Rott, Karsten"],["dc.contributor.author","Thomas, Andy"],["dc.contributor.author","Reiss, Guenter"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Schuhmann, Henning"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Czerner, Michael"],["dc.contributor.author","Heiliger, Christian"],["dc.date.accessioned","2018-11-07T09:27:58Z"],["dc.date.available","2018-11-07T09:27:58Z"],["dc.date.issued","2013"],["dc.description.abstract","Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with three monolayer thin MgO barriers. The quality of the interfaces at different growth conditions is studied quantitatively via high-resolution transmission electron microscopy imaging. We demonstrate tunneling magnetoresistance ratios of up to 55% to 64% for 3 to 4 monolayer barrier thickness. Magnetic tunnel junctions with perpendicular magnetization anisotropy show spin-transfer torque switching with a critical current of 0.2 MA/cm(2). The thermally generated torque is calculated ab initio using the Korringa-Kohn-Rostoker and nonequilibrium Green's function method. Temperature gradients generated from femtosecond laser pulses were simulated using COMSOL, revealing gradients of 20K enabling thermal spin-transfer-torque switching."],["dc.identifier.doi","10.1142/S2010324713500021"],["dc.identifier.isi","000209834800003"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/30662"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","World Scientific Publ Co Pte Ltd"],["dc.relation.issn","2010-3255"],["dc.relation.issn","2010-3247"],["dc.title","PARAMETER SPACE FOR THERMAL SPIN-TRANSFER TORQUE"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","742"],["dc.bibliographiccitation.issue","10"],["dc.bibliographiccitation.journal","Nature Materials"],["dc.bibliographiccitation.lastpage","746"],["dc.bibliographiccitation.volume","10"],["dc.contributor.author","Walter, Marvin"],["dc.contributor.author","Walowski, Jakob"],["dc.contributor.author","Zbarsky, Vladyslav"],["dc.contributor.author","Muenzenberg, Markus G."],["dc.contributor.author","Schaefers, Markus"],["dc.contributor.author","Ebke, Daniel"],["dc.contributor.author","Reiss, Guenter"],["dc.contributor.author","Thomas, Andy"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Moodera, Jagadeesh S."],["dc.contributor.author","Czerner, Michael"],["dc.contributor.author","Bachmann, Michael"],["dc.contributor.author","Heiliger, Christian"],["dc.date.accessioned","2018-11-07T08:51:17Z"],["dc.date.available","2018-11-07T08:51:17Z"],["dc.date.issued","2011"],["dc.description.abstract","Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, that is, the combination of magneto- and thermoelectric effects(1-5). Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge-based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In this respect, it is the analogue to the tunnelling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configurations are of the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. The geometric centre of the electronic density of states relative to the Fermi level determines the size of the Seebeck effect. Experimentally, we realized 8.8% magneto-Seebeck effect, which results from a voltage change of about -8.7 mu VK-1 from the antiparallel to the parallel direction close to the predicted value of -12.1 mu VK-1. In contrast to the spin-Seebeck effect, it can be measured as a voltage change directly without conversion of a spin current."],["dc.identifier.doi","10.1038/NMAT3076"],["dc.identifier.isi","000295155200009"],["dc.identifier.pmid","21785418"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/21896"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Nature Publishing Group"],["dc.relation.issn","1476-1122"],["dc.title","Seebeck effect in magnetic tunnel junctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]