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X-ray absorption in GaGdN: A study of local structure
ISSN
0003-6951
Date Issued
2008
Author(s)
Martinez-Criado, G.
Sancho-Juan, O.
Garro, N.
Sans, J. A.
Cantarero, A.
Susini, J.
Roever, Martin
Mai, D.-D.
Bedoya-Pinto, A.
DOI
10.1063/1.2957984
Abstract
In this study, we report on the incorporation of dilute Gd amounts into GaN films grown by molecular beam epitaxy. A combination of x-ray fluorescence with x-ray absorption spectroscopic techniques enabled us to examine not only the distribution of rare earth atoms in the GaN matrix but also the short-range structural order. Our results show Gd atoms in a trivalent state with tetrahedral coordination, thus substituting Ga in the wurtzite GaN structure. (C) 2008 American Institute of Physics.