3D microstructuring in p-GaAs with proton beam writing using multiple ion fluences

We report on a new method of three-dimensional structuring by means of proton beam writing in p-type gallium arsenide. While up to now vertical features have been created by varying the proton beam energy during irradiation which changes the proton penetration depth and thereby the depth of the material modification, we manufactured 3D structures with a single beam energy but different proton doses supplemented by a subsequent controlled electrochemical etching process. This new approach could simplify 3D structuring in semiconductors and the usage of proton beam writing for the manufacturing of micro electromechanical devices with high aspect ratios and smooth sidewalls.