Surface potential at as-grown GaN(0001) MBE layers

ISSN
0370-1972
Date Issued
2002
Author(s)
Kocan, M.
Luth, H.
Keller, S.
Mishra, Umesh K.
DOI
10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3.0.CO;2-0
Abstract
The Fermi level pinning at GaN and AlGaN surfaces was investigated in-situ by X-ray photoemission spectroscopy (XPS). The measurement revealed, that the pinning position is strongly affected by the Ga/N ratio during MBE growth. The effect of the surface potential on the electronic properties of two dimensional electron gases (2DEG) forming at AlGaN/GaN interfaces was studied by means of self-consistent Schrodinger-Poisson calculations.