Seibt, Michael

[["dc.bibliographiccitation.artnumber","124308"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.volume","118"],["dc.contributor.author","Fricke-Begemann, Thomas"],["dc.contributor.author","Wang, N."],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Ihlemann, Juergen"],["dc.date.accessioned","2018-11-07T09:51:27Z"],["dc.date.available","2018-11-07T09:51:27Z"],["dc.date.issued","2015"],["dc.description.abstract","Silicon nanocrystals have been generated by laser induced phase separation in SiOx films. A continuous wave laser emitting at 405 nm is focused to a 6 mu m diameter spot on 530 nm thick SiOx films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 x 10(5) W/cm(2), the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the central irradiated region is oxidized to SiO2 and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power. (C) 2015 AIP Publishing LLC."],["dc.identifier.doi","10.1063/1.4931670"],["dc.identifier.isi","000362565800033"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/35919"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","1089-7550"],["dc.relation.issn","0021-8979"],["dc.title","Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiOx films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","195307"],["dc.bibliographiccitation.issue","19"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","70"],["dc.contributor.author","Borgardt, Nikolai I."],["dc.contributor.author","Plikat, B."],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Wagner, T."],["dc.date.accessioned","2018-11-07T10:44:27Z"],["dc.date.available","2018-11-07T10:44:27Z"],["dc.date.issued","2004"],["dc.description.abstract","The structure of the transition region between crystalline Si(111) and amorphous germanium has been studied by means of quantitative high-resolution electron microscopy. Using iterative image matching techniques the two-dimensional distribution function of germanium atoms in the transition region has been determined from focal image series of such interfaces. The distribution function reveals lateral ordering close to the crystalline substrate in addition to a pronounced layering usually observed for solid-liquid interfaces. It further shows that the transition region is elastically strained due to the volume misfit between crystalline silicon and amorphous germanium. The width of the transition region is 1.4 nm corresponding to about four (111) layers of crystalline silicon or germanium. Finally, the width of the bond-angle distribution for the first layer of germanium atoms on the silicon substrate is determined as 8.9degrees which is close to the corresponding value of 9.7degrees for bulk amorphous germanium."],["dc.identifier.doi","10.1103/PhysRevB.70.195307"],["dc.identifier.isi","000225477800085"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/47270"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","American Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Atomic structure of the interface between silicon (111) and amorphous germanium"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","S0304399121001054"],["dc.bibliographiccitation.firstpage","113320"],["dc.bibliographiccitation.journal","Ultramicroscopy"],["dc.bibliographiccitation.volume","228"],["dc.contributor.author","Meyer, Tobias"],["dc.contributor.author","Westphal, Tobias"],["dc.contributor.author","Kressdorf, Birte"],["dc.contributor.author","Ross, Ulrich"],["dc.contributor.author","Jooss, Christian"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2021-07-05T15:00:26Z"],["dc.date.available","2021-07-05T15:00:26Z"],["dc.date.issued","2021"],["dc.identifier.doi","10.1016/j.ultramic.2021.113320"],["dc.identifier.pii","S0304399121001054"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/87825"],["dc.language.iso","en"],["dc.notes.intern","DOI Import DOI-Import GROB-441"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation","SFB 1073 | Topical Area Z | Z02 Hochauflösende Charakterisierung von Grenzflächen"],["dc.relation.issn","0304-3991"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","Site-specific plan-view TEM lamella preparation of pristine surfaces with a large field of view"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","235"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Applied Physics A"],["dc.bibliographiccitation.lastpage","253"],["dc.bibliographiccitation.volume","96"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Khalil, Reda"],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroeter, Wolfgang"],["dc.date.accessioned","2018-11-07T08:27:58Z"],["dc.date.available","2018-11-07T08:27:58Z"],["dc.date.issued","2009"],["dc.description.abstract","Predominant dislocation types in solar silicon are dissociated into 30A degrees- and 90A degrees-partials with reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D band at the stacking fault connecting the two partials, the existence of several intrinsic core defects with deep lying levels has been demonstrated by electron spin resonance. The majority of core defects occur in nonequilibrium situations and, with the exception of a small EPR-signal assigned to a reconstruction defect, vanish after careful annealing above 800A degrees C. There is good evidence now that part of deep levels observed in dislocated silicon is associated with impurities, especially with transition metal impurities. Electron-hole-pair recombination at a dislocation mainly runs via its shallow bands and is strongly increased by impurities bound to its core or in the strain field. The concentration of these impurities can be reduced by gettering processes to such a low level that radiative recombination at dislocations yields a luminescence efficiency of 0.1% at room temperature. A quite coherent picture has emerged for metal impurity precipitation in silicon. Early stages of precipitation in defect-free silicon are characterised by kinetically selected metastable defects forming as a result of large chemical driving forces for precipitation. Such defects are associated with deep level spectra which show the properties of extended multielectron defects. The evolution of the system to energetically more favourable configurations proceeds via ordinary particle coarsening but also via internal ripening, a process reminiscent of the above-mentioned metastable defects. Electronically, the defects evolve into metal-like inclusions which in general seem to act as strong recombination centers for minority carriers. In the presence of dislocations metastable defects quickly transform into equilibrium structures in the course of precipitation or do not form at all. In the presence of several metal impurities silicide precipitates which can be described as solid solutions of the respective metal atoms are observed, which is at least qualitatively in accord with ternary phase diagrams. Like single-metal silicide precipitates, strong minority carrier recombination is also typical for those multi-metal silicide particles."],["dc.identifier.doi","10.1007/s00339-008-5027-8"],["dc.identifier.isi","000266372100025"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/6718"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/16315"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Springer"],["dc.relation.issn","1432-0630"],["dc.relation.issn","0947-8396"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","Goescholar"],["dc.rights.uri","https://goedoc.uni-goettingen.de/licenses"],["dc.title","Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials"],["dc.type","review"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","034304"],["dc.bibliographiccitation.issue","3"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.volume","98"],["dc.contributor.author","Thune, E."],["dc.contributor.author","Carpene, Ettore"],["dc.contributor.author","Sauthoff, K."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Reinke, Petra"],["dc.date.accessioned","2018-11-07T10:39:52Z"],["dc.date.available","2018-11-07T10:39:52Z"],["dc.date.issued","2005"],["dc.description.abstract","Gold clusters have been deposited by a monoenergetic, mass-selected ion beam with low energies (20-350 eV) on amorphous carbon substrates in order to minimize the influence of the surface crystallinity and the ion-induced structural changes. Gold has been used as a model system, due to the poor reactivity with carbon, to study the ion-energy dependence, the temporal evolution, and the influence of the temperature on the cluster distribution. The cluster size is very sensitive to the energy and the mean size strongly decreases from 4 to less than 1 nm as the ion energy increases. We can also note that the size distribution becomes broader. For impact energies below 100 eV, surface processes dominate the cluster nucleation and growth. If higher energies are used, an increasing number of ions is implanted below the surface and different processes control the cluster formation. When the energy increases above 350 eV, the cluster size drastically drops below 5 nm. The samples are analyzed with different methods such as atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy to determine their size distribution, composition, and structure. (c) 2005 American Institute of Physics."],["dc.identifier.doi","10.1063/1.1985977"],["dc.identifier.isi","000231246100089"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/46156"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.relation.issn","0021-8979"],["dc.title","Gold nanoclusters on amorphous carbon synthesized by ion-beam deposition"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","1323"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","MATERIALS TRANSACTIONS"],["dc.bibliographiccitation.lastpage","1326"],["dc.bibliographiccitation.volume","56"],["dc.contributor.author","Leutenantsmeyer, Johannes Christian"],["dc.contributor.author","Zbarsky, Vladyslav"],["dc.contributor.author","Ehe, Marvin von der"],["dc.contributor.author","Wittrock, Steffen"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Schuhmann, Henning"],["dc.contributor.author","Thomas, Andy"],["dc.contributor.author","Rott, Karsten"],["dc.contributor.author","Reiss, Günter"],["dc.contributor.author","Kim, Tae Hee"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Münzenberg, Markus"],["dc.date.accessioned","2018-11-07T09:52:11Z"],["dc.date.available","2018-11-07T09:52:11Z"],["dc.date.issued","2015"],["dc.description.abstract","The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3 kA/cm(2) is observed and the thermally activated switching probability distribution is discussed."],["dc.identifier.doi","10.2320/matertrans.MA201570"],["dc.identifier.isi","000363364300004"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36066"],["dc.language.iso","en"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Japan Inst Metals"],["dc.publisher.place","Sendai"],["dc.relation.conference","2nd International Symposium on Nano Materials, Technology and Applications (NANOMATA)"],["dc.relation.eventlocation","Hanoi, VIETNAM"],["dc.relation.issn","1347-5320"],["dc.relation.issn","1345-9678"],["dc.title","Spin-Transfer Torque Switching at Ultra Low Current Densities"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","043519"],["dc.bibliographiccitation.issue","4"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.volume","108"],["dc.contributor.author","Abdelbarey, D."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroeter, Wolfgang"],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T08:40:21Z"],["dc.date.available","2018-11-07T08:40:21Z"],["dc.date.issued","2010"],["dc.description.abstract","Deep level transient spectroscopy is used to study light-induced reactions of residual iron impurities after aluminum gettering (AlG) in crystalline silicon. White-light illumination at room temperature leads to the formation of a defect which is associated with a donor level at 0.33 eV above the valence band. This defect is stable up to about 175 degrees C where it dissociates reversibly in case of small iron concentrations and irreversibly for high iron concentrations. Since marker experiments using gold and platinum diffusion show a high vacancy concentration after AlG a tentative identification of the new defect as the metastable iron-vacancy pair is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3474658]"],["dc.identifier.doi","10.1063/1.3474658"],["dc.identifier.isi","000281857100050"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/19212"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","0021-8979"],["dc.title","Light-induced point defect reactions of residual iron in crystalline silicon after aluminum gettering"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","2830"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","physica status solidi (a)"],["dc.bibliographiccitation.lastpage","2836"],["dc.bibliographiccitation.volume","212"],["dc.contributor.author","Hartmann, Jana"],["dc.contributor.author","Wang, Xue"],["dc.contributor.author","Schuhmann, Henning"],["dc.contributor.author","Dziony, Wanja"],["dc.contributor.author","Caccamo, Lorenzo"],["dc.contributor.author","Ledig, Johannes"],["dc.contributor.author","Mohajerani, Matin Sadat"],["dc.contributor.author","Schimpke, Tilman"],["dc.contributor.author","Baehr, Markus"],["dc.contributor.author","Lilienkamp, Gerhard"],["dc.contributor.author","Daum, Winfried"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Strassburg, Martin"],["dc.contributor.author","Wehmann, Hergo-Heinrich"],["dc.contributor.author","Waag, Andreas"],["dc.date.accessioned","2017-09-07T11:54:50Z"],["dc.date.available","2017-09-07T11:54:50Z"],["dc.date.issued","2015"],["dc.description.abstract","The three-dimensional growth of GaN structures as a basis for the fabrication of 3D GaN core-shell LEDs has attracted substantial attention in the past few years. GaN nanorods or microrods with high aspect ratios can be grown by selective area epitaxy on a GaN buffer through a SiOx mask. It has been found earlier that silane substantially initiates vertical growth, with the exact underlying mechanisms being still unclear. Here, the influence of silane on the 3D GaN column growth was investigated by performing detailed growth experiments in combination with a thorough surface analysis in order to get insight into these mechanisms. The vertical growth rate is significantly enhanced by high silane fluxes, whereas the saturation of growth rate with the time is reduced. Thus, homogenous GaN columns with an aspect ratio of more than 35 could be achieved. A thin Si-rich layer on the non-polar m-plane facets of the columns has been detected using a combination of transmission electron microscopy, energy dispersive X-ray spectroscopy and Auger electron spectroscopy. This layer is suggested to be the reason for the increase in growth rate, modifying the effective collection range of the species along the sidewalls, and preventing the lateral growth. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim"],["dc.identifier.doi","10.1002/pssa.201532316"],["dc.identifier.gro","3141774"],["dc.identifier.isi","000366589900026"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/924"],["dc.notes.intern","WoS Import 2017-03-10"],["dc.notes.status","final"],["dc.notes.submitter","PUB_WoS_Import"],["dc.relation.eissn","1862-6319"],["dc.relation.issn","1862-6300"],["dc.title","Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","924"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","928"],["dc.bibliographiccitation.volume","390"],["dc.contributor.author","Ghosh, Moumita"],["dc.contributor.author","Ghosh, Siddharth"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Schaap, Iwan A. T."],["dc.contributor.author","Schmidt, Christoph"],["dc.contributor.author","Rao, G. Mohan"],["dc.date.accessioned","2017-09-07T11:44:31Z"],["dc.date.available","2017-09-07T11:44:31Z"],["dc.date.issued","2016"],["dc.description.abstract","Due to their photoluminescence, metal oxide nanostructures such as ZnO nanostructures are promising candidates in biomedical imaging, drug delivery and bio-sensing. To apply them as label for bio-imaging, it is important to study their structural stability in a bio-fluidic environment. We have explored the effect of water, the main constituent of biological solutions, on ZnO nanostructures with scanning electron microscopy (SEM) and photoluminescence (PL) studies which show ZnO nanorod degeneration in water. In addition, we propose and investigate a robust and inexpensive method to encapsulate these nano structures (without structural degradation) using bio-compatible non-ionic surfactant in non-aqueous medium, which was not reported earlier. This new finding is an immediate interest to the broad audience of researchers working in biophysics, sensing and actuation, drug delivery, food and cosmetics technology, etc. (C) 2016 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.apsusc.2016.08.117"],["dc.identifier.gro","3141594"],["dc.identifier.isi","000385900700112"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/5"],["dc.notes.intern","WoS Import 2017-03-10"],["dc.notes.status","final"],["dc.notes.submitter","PUB_WoS_Import"],["dc.publisher","Elsevier Science Bv"],["dc.relation.eissn","1873-5584"],["dc.relation.issn","0169-4332"],["dc.title","Designing deoxidation inhibiting encapsulation of metal oxide nanostructures for fluidic and biological applications"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","2632"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","Nanoscale"],["dc.bibliographiccitation.lastpage","2638"],["dc.bibliographiccitation.volume","8"],["dc.contributor.author","Ghosh, Siddharth"],["dc.contributor.author","Ghosh, Moumita"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Rao, Gowravaram Mohan"],["dc.date.accessioned","2018-11-07T10:21:04Z"],["dc.date.available","2018-11-07T10:21:04Z"],["dc.date.issued","2016"],["dc.description.abstract","Quantifying and characterising atomic defects in nanocrystals is difficult and low-throughput using the existing methods such as high resolution transmission electron microscopy (HRTEM). In this article, using a defocused wide-field optical imaging technique, we demonstrate that a single ultrahigh-piezoelectric ZnO nanorod contains a single defect site. We model the observed dipole-emission patterns from optical imaging with a multi-dimensional dipole and find that the experimentally observed dipole pattern and model-calculated patterns are in excellent agreement. This agreement suggests the presence of vertically oriented degenerate-transition-dipoles in vertically aligned ZnO nanorods. The HRTEM of the ZnO nanorod shows the presence of a stacking fault, which generates a localised quantum well induced degenerate-transition-dipole. Finally, we elucidate that defocused wide-field imaging can be widely used to characterise defects in nanomaterials to answer many difficult questions concerning the performance of low-dimensional devices, such as in energy harvesting, advanced metal-oxide-semiconductor storage, and nanoelectromechanical and nanophotonic devices."],["dc.identifier.doi","10.1039/c5nr06722g"],["dc.identifier.isi","000369591400018"],["dc.identifier.pmid","26691877"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/42016"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Royal Soc Chemistry"],["dc.relation.issn","2040-3372"],["dc.relation.issn","2040-3364"],["dc.title","Detection of quantum well induced single degenerate-transition-dipoles in ZnO nanorods"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]