Peretzki, Patrick

[["dc.bibliographiccitation.artnumber","124308"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.volume","118"],["dc.contributor.author","Fricke-Begemann, Thomas"],["dc.contributor.author","Wang, N."],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Ihlemann, Juergen"],["dc.date.accessioned","2018-11-07T09:51:27Z"],["dc.date.available","2018-11-07T09:51:27Z"],["dc.date.issued","2015"],["dc.description.abstract","Silicon nanocrystals have been generated by laser induced phase separation in SiOx films. A continuous wave laser emitting at 405 nm is focused to a 6 mu m diameter spot on 530 nm thick SiOx films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 x 10(5) W/cm(2), the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the central irradiated region is oxidized to SiO2 and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power. (C) 2015 AIP Publishing LLC."],["dc.identifier.doi","10.1063/1.4931670"],["dc.identifier.isi","000362565800033"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/35919"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","1089-7550"],["dc.relation.issn","0021-8979"],["dc.title","Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiOx films"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","1323"],["dc.bibliographiccitation.issue","9"],["dc.bibliographiccitation.journal","MATERIALS TRANSACTIONS"],["dc.bibliographiccitation.lastpage","1326"],["dc.bibliographiccitation.volume","56"],["dc.contributor.author","Leutenantsmeyer, Johannes Christian"],["dc.contributor.author","Zbarsky, Vladyslav"],["dc.contributor.author","Ehe, Marvin von der"],["dc.contributor.author","Wittrock, Steffen"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Schuhmann, Henning"],["dc.contributor.author","Thomas, Andy"],["dc.contributor.author","Rott, Karsten"],["dc.contributor.author","Reiss, Günter"],["dc.contributor.author","Kim, Tae Hee"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Münzenberg, Markus"],["dc.date.accessioned","2018-11-07T09:52:11Z"],["dc.date.available","2018-11-07T09:52:11Z"],["dc.date.issued","2015"],["dc.description.abstract","The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3 kA/cm(2) is observed and the thermally activated switching probability distribution is discussed."],["dc.identifier.doi","10.2320/matertrans.MA201570"],["dc.identifier.isi","000363364300004"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/36066"],["dc.language.iso","en"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Japan Inst Metals"],["dc.publisher.place","Sendai"],["dc.relation.conference","2nd International Symposium on Nano Materials, Technology and Applications (NANOMATA)"],["dc.relation.eventlocation","Hanoi, VIETNAM"],["dc.relation.issn","1347-5320"],["dc.relation.issn","1345-9678"],["dc.title","Spin-Transfer Torque Switching at Ultra Low Current Densities"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","445"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Angewandte Chemie International Edition"],["dc.bibliographiccitation.lastpage","449"],["dc.bibliographiccitation.volume","55"],["dc.contributor.author","Han, Muxin"],["dc.contributor.author","Luo, Yuansu"],["dc.contributor.author","Damaschke, Bernd"],["dc.contributor.author","Gomez, Laura"],["dc.contributor.author","Ribas, Xavi"],["dc.contributor.author","Jose, Anex"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Clever, Guido H."],["dc.date.accessioned","2018-11-07T10:19:31Z"],["dc.date.available","2018-11-07T10:19:31Z"],["dc.date.issued","2016"],["dc.description.abstract","Stimuli-responsive structural reorganizations play an important role in biological processes, often in combination with kinetic control scenarios. In supramolecular mimics of such systems, light has been established as the perfect external trigger. Here, we report on the light-driven structural rearrangement of a small, self-assembled Pd3L6 ring based on photochromic dithienylethene (DTE) ligands into a rhombicuboctahedral Pd24L48 sphere measuring about 6.4 nm across. When the wavelength is changed, this interconversion can be fully reversed, as confirmed by NMR and UV/Vis spectroscopy as well as mass spectrometry. The sphere was visualized by AFM, TEM, and GISAXS measurements. Due to dissimilarities in the photoswitch conformations, the interconversion rates between the two assemblies are drastically different in the two directions."],["dc.identifier.doi","10.1002/anie.201508307"],["dc.identifier.isi","000368065300071"],["dc.identifier.pmid","26609916"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/41674"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B01 Photon-induced structural phase transition controlled by electronic correlations"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation","SFB 1073 | Topical Area B | B05 Energy conversion processes underlying the light-powered reversible guest exchange of photochromic coordination cages"],["dc.relation.issn","1521-3773"],["dc.relation.issn","1433-7851"],["dc.title","Light-Controlled Interconversion between a Self-Assembled Triangle and a Rhombicuboctahedral Sphere"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","012009"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Journal of Physics: Conference Series"],["dc.bibliographiccitation.volume","1190"],["dc.contributor.affiliation","Meyer, T;"],["dc.contributor.affiliation","Kressdorf, B;"],["dc.contributor.affiliation","Lindner, J;"],["dc.contributor.affiliation","Peretzki, P;"],["dc.contributor.affiliation","Roddatis, V;"],["dc.contributor.affiliation","Jooss, C;"],["dc.contributor.affiliation","Seibt, M;"],["dc.contributor.author","Meyer, T."],["dc.contributor.author","Kressdorf, B."],["dc.contributor.author","Lindner, J."],["dc.contributor.author","Peretzki, P."],["dc.contributor.author","Roddatis, V."],["dc.contributor.author","Jooss, Christian"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2020-12-10T18:15:51Z"],["dc.date.available","2020-12-10T18:15:51Z"],["dc.date.issued","2019"],["dc.date.updated","2022-04-07T11:26:58Z"],["dc.description.abstract","Abstract Fundamental losses of photovoltaic energy conversion are transmission of sub band gap photons and thermalisation which are the underlying physics of the Shockley-Queisser limit defining maximum conversion efficiency of single-junction solar cells. Strongly correlated materials such as perovskites are promising candidates to exceed this limit by exploiting (i) long wavelength light absorption and (ii) the existence of long-living intraband excitations indicating that harvesting hot excess carriers might be feasible in such systems. In this work, we study pn-heterojunctions produced from Pr1-xCaxMnO3 on SrTi1-yNbyO3 by means of microscopic techniques. Such systems exhibit relevant quantities such as space charge layer width, screening lengths and excess carrier diffusion lengths in the 1-10 nm range which makes the use of standard methods such as electron beam induced current a challenging task. We report scanning transmission electron beam induced current experiments of misfit dislocations at the heterojunction. The dislocation-induced reduction of the charge collection is studied with nanometer spatial resolution. Effects of surface recombination and the heterojunction electric field are discussed."],["dc.identifier.doi","10.1088/1742-6596/1190/1/012009"],["dc.identifier.eissn","1742-6596"],["dc.identifier.issn","1742-6588"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/16699"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/74976"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-354"],["dc.notes.intern","Merged from goescholar"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B02 Photonen-getriebener Energietransfer über Grenzflächen zwischen Materialien mit starken Korrelationen"],["dc.relation","SFB 1073 | Topical Area Z | Z02 Hochauflösende Charakterisierung von Grenzflächen"],["dc.relation.eissn","1742-6596"],["dc.relation.issn","1742-6588"],["dc.relation.orgunit","Fakultät für Physik"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.rights","CC BY 3.0"],["dc.rights.uri","https://creativecommons.org/licenses/by/3.0/"],["dc.title","High-resolution Scanning Transmission EBIC Analysis of Misfit Dislocations at Perovskite pn-Heterojunctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","1600358"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","physica status solidi (RRL) - Rapid Research Letters"],["dc.bibliographiccitation.volume","11"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Ifland, Benedikt"],["dc.contributor.author","Jooss, Christian"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2018-11-07T10:28:51Z"],["dc.date.available","2018-11-07T10:28:51Z"],["dc.date.issued","2017"],["dc.description.abstract","Electron beam induced current (EBIC) at p-n junctions can be measured in high spatial resolution using a thin lamella geometry, where most incident electrons transmit the sample. We explore the case of low excitation energies in a wedge-shaped lamella geometry to increase resolution in a controlled way. We compare a sample with high (Si) and low (manganite-titanate heterojunction) diffusion length and use Monte Carlo based simulations as a reference. It is shown that the EBIC signal obtained from the Si junction vanishes below a thickness of 300 nm, whereas this happens at 80 nm in the PCMO-STNO junction. This allows for achieving an EBIC resolution of better than 50 nm for the latter system. The observed fundamental differences between the silicon and the perovskite junction are discussed in terms of preparation induced 'dead' layers and surface recombination."],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft (DFG) [SFB1073]"],["dc.identifier.doi","10.1002/pssr.201600358"],["dc.identifier.isi","000396401500012"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/43519"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","PUB_WoS_Import"],["dc.relation.issn","1862-6270"],["dc.relation.issn","1862-6254"],["dc.relation.orgunit","Institut für Materialphysik"],["dc.title","Low energy scanning transmission electron beam induced current for nanoscale characterization of p-n junctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","622"],["dc.bibliographiccitation.issue","4"],["dc.bibliographiccitation.journal","CrystEngComm"],["dc.bibliographiccitation.lastpage","630"],["dc.bibliographiccitation.volume","18"],["dc.contributor.author","Ghosh, Moumita"],["dc.contributor.author","Ghosh, Siddharth"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Rao, K. Yellareswara"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Rao, Gowravaram Mohan"],["dc.date.accessioned","2018-11-07T10:21:19Z"],["dc.date.available","2018-11-07T10:21:19Z"],["dc.date.issued","2016"],["dc.description.abstract","Ferroelectricity in ZnO is an unlikely physical phenomenon. Here, we show ferroelectricity in undoped [001] ZnO nanorods due to zinc vacancies. Generation of ferroelectricity in a ZnO nanorod effectively increases its piezoelectricity and turns the ZnO nanorod into an ultrahigh-piezoelectric material. Here using piezoelectric force microscopy (PFM), it is observed that increasing the frequency of the AC excitation electric field decreases the effective d(33). Subsequently, the existence of a reversible permanent electric dipole is also found from the P-E hysteresis loop of the ZnO nanorods. Under a high resolution transmission electron microscope (HRTEM), we observe a zinc blende stacking in the wurtzite stacking of a single nanorod along the growth axis. The zinc blende nature of this defect is also supported by the X-ray diffraction (XRD) and Raman spectra. The presence of zinc vacancies in this basal stacking fault modulates p-d hybridization of the ZnO nanorod and produces a magnetic moment through the adjacent oxygen ions. This in turn induces a reversible electric dipole in the non-centrosymmetric nanostructure and is responsible for the ultrahigh-piezoelectric response in these undoped ZnO nanorods. We reveal that this defect engineered ZnO can be considered to be in the competitive class of ultrahigh-piezoelectric nanomaterials for energy harvesting and electromechanical device fabrication."],["dc.description.sponsorship","Ministry of Human Resource Development, Government of India"],["dc.identifier.doi","10.1039/c5ce02262b"],["dc.identifier.isi","000368400400016"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/42060"],["dc.language.iso","en"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.relation.issn","1466-8033"],["dc.title","Ferroelectric origin in one-dimensional undoped ZnO towards high electromechanical response"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","138"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","142"],["dc.bibliographiccitation.volume","374"],["dc.contributor.author","Stolzenburg, H."],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Wang, N."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Ihlemann, Juergen"],["dc.date.accessioned","2018-11-07T10:12:33Z"],["dc.date.available","2018-11-07T10:12:33Z"],["dc.date.issued","2016"],["dc.description.abstract","The pulsed UV-laser irradiation of thin noble metal films deposited on glass substrates leads to the incorporation of metal particles in the glass, if a sufficiently high laser fluence is applied. This process is called laser implantation. For the implantation of gold into pure fused silica, high laser fluences (similar to 1 J/cm(2) at 193 nm laser wavelength) are required. Using a SiOx (x approximate to 1) coated SiO2-substrate, the implantation of gold into this coating can be accomplished at significantly lower fluences starting from 0.2 J/cm(2) (comparable to those used for standard glass). Particles with diameters in the range of 10-60 nm are implanted to a depth of about 40 nm as identified by transmission electron microscopy. An additional high temperature annealing step in air leads to the oxidation of SiOx to SiO2, without influencing the depth distribution of particles significantly. Only superficial, weakly bound particles are released and can be wiped away. Absorption spectra show a characteristic plasmon resonance peak at 540 nm. Thus, pure silica glass (SiO2) with near surface incorporated plasmonic particles can be fabricated with this method. Such material systems may be useful for example as robust substrates for surface enhanced Raman spectroscopy (SERS). (C) 2015 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.apsusc.2015.10.092"],["dc.identifier.isi","000375937300023"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/40261"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","Symposium CC on Laser and Plasma Processing for Advanced Applications in Material Science held during the Annual Spring Meeting of the European-Materials-Research-Society (E-MRS)"],["dc.relation.eventlocation","Lille, FRANCE"],["dc.relation.issn","1873-5584"],["dc.relation.issn","0169-4332"],["dc.title","Implantation of plasmonic nanoparticles in SiO2 by pulsed laser irradiation of gold films on SiOx-coated fused silica and subsequent thermal annealing"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","1900308"],["dc.bibliographiccitation.issue","17"],["dc.bibliographiccitation.journal","physica status solidi (a)"],["dc.bibliographiccitation.volume","216"],["dc.contributor.author","Flathmann, Christoph"],["dc.contributor.author","Spende, Hendrik"],["dc.contributor.author","Meyer, Tobias"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2021-12-08T12:30:41Z"],["dc.date.available","2021-12-08T12:30:41Z"],["dc.date.issued","2019"],["dc.identifier.doi","10.1002/pssa.201900308"],["dc.identifier.eissn","1862-6319"],["dc.identifier.issn","1862-6300"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/96521"],["dc.language.iso","en"],["dc.notes.intern","DOI-Import GROB-476"],["dc.relation.eissn","1862-6319"],["dc.relation.issn","1862-6300"],["dc.title","Preparation Techniques for Cross‐Section Transmission Electron Microscopy Lamellas Suitable for Investigating In Situ Silicon–Aluminum Alloying at Grain Boundaries in Multicrystalline Silicon"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","227"],["dc.bibliographiccitation.journal","Journal of Alloys and Compounds"],["dc.bibliographiccitation.lastpage","232"],["dc.bibliographiccitation.volume","707"],["dc.contributor.author","Wang, N."],["dc.contributor.author","Fricke-Begemann, Thomas"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Thiel, Karsten"],["dc.contributor.author","Ihlemann, Juergen"],["dc.contributor.author","Seibt, Michael"],["dc.date.accessioned","2018-11-07T10:22:42Z"],["dc.date.available","2018-11-07T10:22:42Z"],["dc.date.issued","2017"],["dc.description.abstract","Laser-irradiation of silicon-rich silicon oxides (SRSO) is a promising technique for spatially well-defined production of silicon nanocrystals (nc-Si) showing room temperature photoluminescence. In this work, we use continuous-wave (CW) laser processing to generate nc-Si in SRSO films on fused silica substrates. One main problem is damage introduced by laser processing which results in a porous layer beneath the original film surface as is consistently shown by electron tomography and energy-dispersive X-ray spectrometry. Processing conditions for damage-free nc-Si formation are identified by systematic variation of laser intensity and measuring the depth of the damaged region by transmission electron microscopy (TEM). By combining TEM imaging and analysis it is shown that the damaged region has a composition close to SiO2 which is due to a predominant loss of silicon rather than an a result of surface oxidation during laser processing. (C) 2016 Elsevier B.V. All rights reserved."],["dc.identifier.doi","10.1016/j.jallcom.2016.12.115"],["dc.identifier.isi","000400709800041"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/42320"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","PUB_WoS_Import"],["dc.publisher","Elsevier Science Sa"],["dc.relation.issn","1873-4669"],["dc.relation.issn","0925-8388"],["dc.title","Microstructural analysis of the modifications in substrate-bound silicon-rich silicon oxide induced by continuous wave laser irradiation"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","132405"],["dc.bibliographiccitation.issue","13"],["dc.bibliographiccitation.journal","Applied Physics Letters"],["dc.bibliographiccitation.volume","105"],["dc.contributor.author","Fabretti, Savio"],["dc.contributor.author","Zierold, Robert"],["dc.contributor.author","Nielsch, Kornelius"],["dc.contributor.author","Voigt, Carmen"],["dc.contributor.author","Ronning, Carsten"],["dc.contributor.author","Peretzki, Patrick"],["dc.contributor.author","Seibt, Michael"],["dc.contributor.author","Thomas, Andy"],["dc.date.accessioned","2018-11-07T09:35:02Z"],["dc.date.available","2018-11-07T09:35:02Z"],["dc.date.issued","2014"],["dc.description.abstract","Magnetic tunnel junctions with HfO2 tunnel barriers were prepared through a combination of magnetron sputtering and atomic layer deposition. We investigated the tunneling transport behavior, including the tunnel magnetoresistance ratio and the current-voltage characteristics between room temperature and 2 K. Here, we achieved a tunneling magneto resistance ratio of 10.3% at room temperature and 19.3% at 2 K. Furthermore, we studied the bias-voltage and temperature dependencies and compared the results with those of commonly used alumina-and magnesia-based magnetic tunnel junctions. We observed a polycrystalline/amorphous electrode-barrier system via high-resolution transmission electron microscopy. (C) 2014 AIP Publishing LLC."],["dc.identifier.doi","10.1063/1.4896994"],["dc.identifier.isi","000343031700039"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/32305"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","1077-3118"],["dc.relation.issn","0003-6951"],["dc.title","Temperature and bias-voltage dependence of atomic-layer-deposited HfO2-based magnetic tunnel junctions"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]