IV. Physikalisches Institut

[["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","Nature Communications"],["dc.bibliographiccitation.volume","11"],["dc.contributor.author","Sinterhauf, Anna"],["dc.contributor.author","Traeger, Georg A."],["dc.contributor.author","Momeni Pakdehi, Davood"],["dc.contributor.author","Schädlich, Philip"],["dc.contributor.author","Willke, Philip"],["dc.contributor.author","Speck, Florian"],["dc.contributor.author","Seyller, Thomas"],["dc.contributor.author","Tegenkamp, Christoph"],["dc.contributor.author","Pierz, Klaus"],["dc.contributor.author","Schumacher, Hans Werner"],["dc.contributor.author","Wenderoth, Martin"],["dc.date.accessioned","2021-04-14T08:27:37Z"],["dc.date.available","2021-04-14T08:27:37Z"],["dc.date.issued","2020"],["dc.description.sponsorship","Open-Access-Publikationsfonds 2020"],["dc.identifier.doi","10.1038/s41467-019-14192-0"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/17320"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/82350"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-399"],["dc.notes.intern","Merged from goescholar"],["dc.relation.eissn","2041-1723"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 4.0"],["dc.rights.uri","http://creativecommons.org/licenses/by/4.0/"],["dc.title","Substrate induced nanoscale resistance variation in epitaxial graphene"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","15283"],["dc.bibliographiccitation.firstpage","1"],["dc.bibliographiccitation.journal","Nature Communications"],["dc.bibliographiccitation.lastpage","7"],["dc.bibliographiccitation.volume","8"],["dc.contributor.author","Willke, Philip"],["dc.contributor.author","Kotzott, Thomas"],["dc.contributor.author","Pruschke, Thomas"],["dc.contributor.author","Wenderoth, Martin"],["dc.date.accessioned","2018-11-07T10:23:54Z"],["dc.date.available","2018-11-07T10:23:54Z"],["dc.date.issued","2017"],["dc.description.abstract","Transport experiments in strong magnetic fields show a variety of fascinating phenomena like the quantum Hall effect, weak localization or the giant magnetoresistance. Often they originate from the atomic-scale structure inaccessible to macroscopic magnetotransport experiments. To connect spatial information with transport properties, various advanced scanning probe methods have been developed. Capable of ultimate spatial resolution, scanning tunnelling potentiometry has been used to determine the resistance of atomic-scale defects such as steps and interfaces. Here we combine this technique with magnetic fields and thus transfer magnetotransport experiments to the atomic scale. Monitoring the local voltage drop in epitaxial graphene, we show how the magnetic field controls the electric field components. We find that scattering processes at localized defects are independent of the strong magnetic field while monolayer and bilayer graphene sheets show a locally varying conductivity and charge carrier concentration differing from the macroscopic average."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2017"],["dc.identifier.doi","10.1038/ncomms15283"],["dc.identifier.isi","000400561800001"],["dc.identifier.pmid","28469282"],["dc.identifier.purl","https://resolver.sub.uni-goettingen.de/purl?gs-1/14628"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/42553"],["dc.notes.intern","Merged from goescholar"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","PUB_WoS_Import"],["dc.publisher","Nature Publishing Group"],["dc.relation.issn","2041-1723"],["dc.relation.orgunit","Fakultät für Physik"],["dc.rights","CC BY 4.0"],["dc.title","Magnetotransport on the nano scale"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","113044"],["dc.bibliographiccitation.issue","11"],["dc.bibliographiccitation.journal","New Journal of Physics"],["dc.bibliographiccitation.volume","23"],["dc.contributor.author","Kotzott, Thomas"],["dc.contributor.author","Bouhassoune, Mohammed"],["dc.contributor.author","Prüser, Henning"],["dc.contributor.author","Weismann, Alexander"],["dc.contributor.author","Lounis, Samir"],["dc.contributor.author","Wenderoth, Martin"],["dc.date.accessioned","2022-01-11T14:05:53Z"],["dc.date.available","2022-01-11T14:05:53Z"],["dc.date.issued","2021"],["dc.description.abstract","Abstract We investigate single Ge and Ag impurities buried below a Cu(100) surface using low temperature scanning tunneling microscopy. The interference patterns in the local density of states are surface scattering signatures of the bulk impurities, which result from 3D Friedel oscillations and the electron focusing effect. Comparing the isoelectronic d scatterer Ag and the sp scatterer Ge allows to distinguish contributions from impurity scattering and the host. Energy-independent effective scattering phase shifts are extracted using a plane wave tight-binding model and reveal similar values for both species. A comparison with ab initio calculations suggests incoherent sp scattering processes at the Ge impurity. As both scatterers are spectrally homogeneous, scanning tunneling spectroscopy of the interference patterns yields real-space signatures of the bulk electronic structure. We find a kink around zero bias for both species that we assign to a renormalization of the band structure due to many-body effects, which can be described with a Debye self-energy and a surprisingly high electron–phonon coupling parameter λ . We propose that this might originate from bulk propagation in the vicinity of the surface."],["dc.description.abstract","Abstract We investigate single Ge and Ag impurities buried below a Cu(100) surface using low temperature scanning tunneling microscopy. The interference patterns in the local density of states are surface scattering signatures of the bulk impurities, which result from 3D Friedel oscillations and the electron focusing effect. Comparing the isoelectronic d scatterer Ag and the sp scatterer Ge allows to distinguish contributions from impurity scattering and the host. Energy-independent effective scattering phase shifts are extracted using a plane wave tight-binding model and reveal similar values for both species. A comparison with ab initio calculations suggests incoherent sp scattering processes at the Ge impurity. As both scatterers are spectrally homogeneous, scanning tunneling spectroscopy of the interference patterns yields real-space signatures of the bulk electronic structure. We find a kink around zero bias for both species that we assign to a renormalization of the band structure due to many-body effects, which can be described with a Debye self-energy and a surprisingly high electron–phonon coupling parameter λ . We propose that this might originate from bulk propagation in the vicinity of the surface."],["dc.description.sponsorship","Open-Access-Publikationsfonds 2021"],["dc.identifier.doi","10.1088/1367-2630/ac3681"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/97768"],["dc.notes.intern","DOI-Import GROB-507"],["dc.relation.eissn","1367-2630"],["dc.relation.orgunit","IV. Physikalisches Institut"],["dc.rights","CC BY 4.0"],["dc.title","Scanning tunneling spectroscopy of subsurface Ag and Ge impurities in copper"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dc.type.version","published_version"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","125322"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","76"],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Suergers, Christoph"],["dc.contributor.author","von Loehneysen, H."],["dc.contributor.author","Rohlfing, M."],["dc.date.accessioned","2018-11-07T10:59:24Z"],["dc.date.available","2018-11-07T10:59:24Z"],["dc.date.issued","2007"],["dc.description.abstract","Substitutional phosphorus atoms at the Si(111)-(2x1) surface have been studied with scanning tunneling microscopy at 8 K. Four different types of the P-induced contrast pattern are distinguished due to their voltage-dependent contrast. Three of them are identified as substitutional P atoms on distinct lattice sites by their spatial symmetry and by comparison with ab initio calculations of the local density of electronic states of substitutional P atoms. The fourth pattern of a P-induced contrast cannot be attributed to the remaining fourth site of the pi-bonded chain. This raises questions not only on the origin of this pattern but also on the absence of substitutional P atoms on one lattice position in this surface."],["dc.identifier.doi","10.1103/PhysRevB.76.125322"],["dc.identifier.isi","000249786500059"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/50691"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Identification of P dopants at nonequivalent lattice sites of the Si(111)-(2x1) surface"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","245424"],["dc.bibliographiccitation.issue","24"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","70"],["dc.contributor.author","Garleff, J. K."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Sauthoff, K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.contributor.author","Rohlfing, M."],["dc.date.accessioned","2018-11-07T10:43:36Z"],["dc.date.available","2018-11-07T10:43:36Z"],["dc.date.issued","2004"],["dc.description.abstract","The electronic structure of the Si(111)-2x1 surface has been studied with scanning tunneling spectroscopy (STS). A large experimental local density of states data set of LDOS(x,y,E) with subatomic resolution has been compared with ab initio calculated LDOS distributions. The influence of the tunneling tip DOS has been eliminated by repeated measurements with different tips. The experimentally determined shape of the LDOS(x,y,E) agrees very well with the calculated results based on the pi-bonded-chain model for both the surface valence and the conduction band. The good agreement with ab initio calculations of the electronic structure of the Si(111)-2x1 surface shows that STS provides reliable information of the sample LDOS even with subatomic resolution."],["dc.identifier.doi","10.1103/PhysRevB.70.245424"],["dc.identifier.isi","000226112300107"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/47094"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","American Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","2x1 reconstructed Si(111) surface: STM experiments versus ab initio calculations"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","216802"],["dc.bibliographiccitation.issue","21"],["dc.bibliographiccitation.journal","Physical Review Letters"],["dc.bibliographiccitation.volume","111"],["dc.contributor.author","Muennich, Gerhard"],["dc.contributor.author","Donarini, Andrea"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Repp, Jascha"],["dc.date.accessioned","2018-11-07T09:17:29Z"],["dc.date.available","2018-11-07T09:17:29Z"],["dc.date.issued","2013"],["dc.description.abstract","In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimentally recover the zero point of the energy scale by combining scanning tunneling microscopy with Kelvin probe force spectroscopy. With this technique, we revisit shallow acceptors buried in GaAs. Enhanced acceptor-related conductance is observed in negative, zero, and positive band-bending regimes. An Anderson-Hubbard model is used to rationalize our findings, capturing the crossover between the acceptor state being part of an impurity band for zero band bending and the acceptor state being split off and localized for strong negative or positive band bending, respectively."],["dc.identifier.doi","10.1103/PhysRevLett.111.216802"],["dc.identifier.isi","000327245600024"],["dc.identifier.pmid","24313511"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/28182"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1079-7114"],["dc.relation.issn","0031-9007"],["dc.title","Fixing the Energy Scale in Scanning Tunneling Microscopy on Semiconductor Surfaces"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","165402"],["dc.bibliographiccitation.issue","16"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","63"],["dc.contributor.author","Engel, K. J."],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Quaas, N."],["dc.contributor.author","Reusch, T. C. G."],["dc.contributor.author","Sauthoff, K."],["dc.contributor.author","Ulbrich, Rainer G."],["dc.date.accessioned","2018-11-07T09:09:59Z"],["dc.date.available","2018-11-07T09:09:59Z"],["dc.date.issued","2001"],["dc.description.abstract","Standing-wave patterns of Au(111) surface electrons in the vicinity of monatornic steps were studied by mapping the thermovoltage across the tunneling gap of a low-temperature scanning tunneling microscope (STM). In contrast to other STM spectroscopic methods, the amplitude of the standing-wave oscillations builds up with distance from the step, up to a maximum. When the temperature T is decreased, the position of this maximum shifts outwards proportional to 1/T. This behavior is explained with an analytical expression and also with numerical calculations of the thermovoltage in the framework of the model of Tersoff and Hamann."],["dc.identifier.doi","10.1103/PhysRevB.63.165402"],["dc.identifier.isi","000168343400082"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/26389"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Physical Soc"],["dc.relation.issn","1550-235X"],["dc.relation.issn","1098-0121"],["dc.title","Thermovoltage mapping of standing electron waves on Au(111) surfaces at low temperatures"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","2000473"],["dc.bibliographiccitation.issue","13"],["dc.bibliographiccitation.journal","Advanced Materials Interfaces"],["dc.bibliographiccitation.volume","7"],["dc.contributor.author","Wit, Bareld"],["dc.contributor.author","Bunjes, Ole"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Ropers, Claus"],["dc.date.accessioned","2020-05-29T09:51:18Z"],["dc.date.available","2020-05-29T09:51:18Z"],["dc.date.issued","2020"],["dc.description.abstract","Abstract The structure of a physisorbed sub‐monolayer of 1,2‐bis(4‐pyridyl)ethylene (bpe) on epitaxial graphene is investigated by low‐energy electron diffraction and scanning tunneling microscopy. Additionally, nonequilibrium heat‐transfer between bpe and the surface is studied by ultrafast low‐energy electron diffraction. Bpe arranges in an oblique unit cell which is not commensurate with the substrate. Six different rotational and/or mirror domains, in which the molecular unit cell is rotated by 28 ± 0.1° with respect to the graphene surface, are identified. The molecules are weakly physisorbed, as evidenced by the fact that they readily desorb at room temperature. At liquid nitrogen temperature, however, the layers are stable and time‐resolved experiments can be performed. The temperature changes of the molecules and the surface can be measured independently through the Debye–Waller factor of their individual diffraction features. Thus, the heat flow between bpe and the surface can be monitored on a picosecond timescale. The time‐resolved measurements, in combination with model simulations, show the existence of three relevant thermal barriers between the different layers. The thermal boundary resistance between the molecular layer and graphene is found to be 2 ± 1 × 10−8 K m2 W−1."],["dc.description.abstract","Physisorbed sub‐monolayers of 1,2‐bis(4‐pyridyl)ethylene on graphene are thoroughly characterized. Moreover, nonequilibrium heat dissipation from the molecular layer into the surface is investigated. The structure of the substrate enables simultaneous measurement of the temperature of the molecules and the surface. From this, the thermal boundary resistance between the molecules and graphene can be determined. image"],["dc.description.sponsorship","European Research Council http://dx.doi.org/10.13039/501100000781"],["dc.description.sponsorship","Deutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659"],["dc.identifier.doi","10.1002/admi.202000473"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/66022"],["dc.language.iso","en"],["dc.notes.intern","DeepGreen Import"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area C | C04 Untersuchung und Kontrolle photochemischer Reaktionen durch lokale optische Anregung im Rastertunnelmikroskop"],["dc.relation.issn","2196-7350"],["dc.relation.issn","2196-7350"],["dc.rights","This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited."],["dc.title","Structure and Nonequilibrium Heat‐Transfer of a Physisorbed Molecular Layer on Graphene"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","6039"],["dc.bibliographiccitation.issue","6"],["dc.bibliographiccitation.journal","ACS Applied Materials & Interfaces"],["dc.bibliographiccitation.lastpage","6045"],["dc.bibliographiccitation.volume","10"],["dc.contributor.author","Momeni Pakdehi, D."],["dc.contributor.author","Aprojanz, J."],["dc.contributor.author","Sinterhauf, A."],["dc.contributor.author","Pierz, K."],["dc.contributor.author","Kruskopf, M."],["dc.contributor.author","Willke, P."],["dc.contributor.author","Baringhaus, J."],["dc.contributor.author","Stöckmann, J. P."],["dc.contributor.author","Traeger, G. A."],["dc.contributor.author","Hohls, F."],["dc.contributor.author","Tegenkamp, C."],["dc.contributor.author","Wenderoth, M."],["dc.contributor.author","Ahlers, F. J."],["dc.contributor.author","Schumacher, H. W."],["dc.date.accessioned","2020-12-10T15:22:29Z"],["dc.date.available","2020-12-10T15:22:29Z"],["dc.date.issued","2018"],["dc.identifier.doi","10.1021/acsami.7b18641"],["dc.identifier.eissn","1944-8252"],["dc.identifier.issn","1944-8244"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/73416"],["dc.language.iso","en"],["dc.notes.intern","DOI Import GROB-354"],["dc.title","Minimum Resistance Anisotropy of Epitaxial Graphene on SiC"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","125801"],["dc.bibliographiccitation.issue","12"],["dc.bibliographiccitation.journal","Physical Review Materials"],["dc.bibliographiccitation.volume","5"],["dc.contributor.author","Sotoudeh, Mohsen"],["dc.contributor.author","Bongers-Loth, Marian David"],["dc.contributor.author","Roddatis, Vladimir"],["dc.contributor.author","Čížek, Jakub"],["dc.contributor.author","Nowak, Carsten"],["dc.contributor.author","Wenderoth, Martin"],["dc.contributor.author","Blöchl, Peter"],["dc.contributor.author","Pundt, Astrid"],["dc.date.accessioned","2022-01-11T14:05:56Z"],["dc.date.available","2022-01-11T14:05:56Z"],["dc.date.issued","2021"],["dc.identifier.doi","10.1103/PhysRevMaterials.5.125801"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/97781"],["dc.language.iso","en"],["dc.notes.intern","DOI-Import GROB-507"],["dc.relation","SFB 1073: Kontrolle von Energiewandlung auf atomaren Skalen"],["dc.relation","SFB 1073 | Topical Area B | B03 Relaxation, Thermalisierung, Transport und Kondensation in hochangeregten Festkörpern"],["dc.relation","SFB 1073 | Topical Area B: Umwandlung von optischen Schwingungen"],["dc.relation","SFB 1073 | Topical Area C: Photonen- und elektronengetriebene Reaktionen"],["dc.relation","SFB 1073 | Topical Area C | C03 Vom Elektronentransfer zur chemischen Energiespeicherung: ab-initio Untersuchungen korrelierter Prozesse"],["dc.relation","SFB 1073 | Topical Area C | C04 Untersuchung und Kontrolle photochemischer Reaktionen durch lokale optische Anregung im Rastertunnelmikroskop"],["dc.relation","SFB 1073 | Topical Area C | C06"],["dc.relation","SFB 1073 | Topical Area Z"],["dc.relation","SFB 1073 | Topical Area Z | Z02 Hochauflösende Charakterisierung von Grenzflächen"],["dc.relation.eissn","2475-9953"],["dc.title","Hydrogen-related defects in titanium dioxide at the interface to palladium"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.subtype","original_ja"],["dspace.entity.type","Publication"]]