Seibt, Michael

[["dc.bibliographiccitation.firstpage","80"],["dc.bibliographiccitation.issue","2-3"],["dc.bibliographiccitation.journal","MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY"],["dc.bibliographiccitation.lastpage","86"],["dc.bibliographiccitation.volume","72"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Ewe, H."],["dc.contributor.author","Hedemann, H."],["dc.contributor.author","Riedel, F."],["dc.contributor.author","Sattler, A."],["dc.date.accessioned","2018-11-07T08:42:41Z"],["dc.date.available","2018-11-07T08:42:41Z"],["dc.date.issued","2000"],["dc.description.abstract","This paper summarizes current understanding of structural and electronic properties of nickel and copper silicide precipitates in silicon. From high-resolution electron microscopy studies it has been concluded that metastable structures form during early stages of precipitation which transform into energetically more favourable configurations during additional annealing or slow cooling. These structural transformations are related to changes of the electronic structure of the precipitates as revealed by deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). Deep bandlike states at initially formed NiSi2-and Cu,Si-platelets detected by DLTS have been attributed to a bounding dislocation and precipitate/matrix interfaces, respectively. Large NiSi2-precipitates act as internal Schottky barriers and may control the minority carrier lifetime of silicon samples. Recent advances in modeling EBIC contrasts provide insight how metal impurities affect the electrical behaviour of dislocations at different degrees of decoration. (C) 2000 Elsevier Science S.A. All rights reserved."],["dc.identifier.doi","10.1016/S0921-5107(99)00499-7"],["dc.identifier.isi","000086130900004"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/19758"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","International Conference on Advanced Materials: Sympopsium M - Silicon-based Materials and Devices"],["dc.relation.eventlocation","BEIJING, PEOPLES R CHINA"],["dc.relation.issn","0921-5107"],["dc.title","Atomic structure and electronic states of nickel and copper silicides in silicon"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","PII S0927-0248(01)00178-7"],["dc.bibliographiccitation.firstpage","299"],["dc.bibliographiccitation.issue","1-4"],["dc.bibliographiccitation.journal","Solar Energy Materials and Solar Cells"],["dc.bibliographiccitation.lastpage","313"],["dc.bibliographiccitation.volume","72"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Spiecker, E."],["dc.date.accessioned","2018-11-07T10:31:05Z"],["dc.date.available","2018-11-07T10:31:05Z"],["dc.date.issued","2002"],["dc.description.abstract","This paper starts out by summarising the modelling and computer simulation of phosphorus diffusion gettering (PDG) of Au. The mobilisation of precipitated impurity atoms is discussed in the light of the silicon interstitial supersaturation provided by the phosphorus diffusion (PD). We then extend the gettering model to Co using bulk solubility data of highly P-doped Si, and find satisfactory agreement with experimental profiles of the total Co-concentration. Yet the pointed disagreement between the CoP/Co-g-ratio obtained through simulation and Mossbauer data leads to the conclusion that, in the case of phosphorus silicate glass (PSG) growth, segregation alone cannot unambigiously account for the observed gettering efficiency. Instead, it is proposed that PID induced silicide formation provides a more suitable explanation of the high efficiency of PDG accompanied with PSG growth. (C) 2002 Elsevier Science B.V. All rights reserved."],["dc.identifier.doi","10.1016/S0927-0248(01)00178-7"],["dc.identifier.isi","000175101100035"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/44016"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.relation.issn","0927-0248"],["dc.title","Mechanisms and computer modelling of transition element gettering in silicon"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","696"],["dc.bibliographiccitation.issue","4"],["dc.bibliographiccitation.journal","physica status solidi (a)"],["dc.bibliographiccitation.lastpage","713"],["dc.bibliographiccitation.volume","203"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Rudolf, C."],["dc.contributor.author","Voss, O."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroter, W."],["dc.date.accessioned","2018-11-07T10:15:38Z"],["dc.date.available","2018-11-07T10:15:38Z"],["dc.date.issued","2006"],["dc.description.abstract","This paper summarizes current understanding and predictive simulations of gettering processes predominantly applied in silicon photovoltaics. Special emphasis is put on various processes limiting gettering efficiency and kinetics, i.e. the mobility of interstitially dissolved metal species, the formation of the gettering layer, and the effect of immobile metal species. The latter are substitutional metal species, precipitates, complexes with defects related to non-metallic impurities, and finally the interaction with extended defects, in particular dislocations. Finally, alternative annealing schemes involving high-temperature rapid thermal processing are explored by simulations. It is shown that a processing window exists for a two-step process efficient for the removal of precipitates even under the constraints of a fixed thermal budget for phosphor-us diffusion. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim."],["dc.identifier.doi","10.1002/pssa.200664516"],["dc.identifier.isi","000236469200011"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/40847"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Wiley-v C H Verlag Gmbh"],["dc.publisher.place","Weinheim"],["dc.relation.conference","2nd Sino-German Symposium on the Silicon Age"],["dc.relation.eventlocation","Cottbus, GERMANY"],["dc.relation.issn","0031-8965"],["dc.title","Gettering in silicon photovoltaics: current state and future perspectives"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","411"],["dc.bibliographiccitation.journal","Diffusion and Defect Data"],["dc.bibliographiccitation.lastpage","416"],["dc.bibliographiccitation.volume","82/84"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Doller, A."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Zozime, A."],["dc.date.accessioned","2018-11-07T10:33:09Z"],["dc.date.available","2018-11-07T10:33:09Z"],["dc.date.issued","2002"],["dc.description.abstract","Analytical, high-resolution and scanning transmission electron microscopy as well as secondary ion mass spectroscopy has been used to study phosphorus diffusion gettering of platinum in silicon at 1100 degreesC. These techniques consistently show that a thin layer of PtSi islands forms directly beneath the interface between the phosphorus silica glas and the silicon which accounts for about 50% of the gettered platinum atoms."],["dc.identifier.isi","000172421600065"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/44536"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Trans Tech Publications Ltd"],["dc.publisher.place","Zürich"],["dc.relation.conference","9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001)"],["dc.relation.eventend","2001-10-03"],["dc.relation.eventlocation","S. Tecla, Italy"],["dc.relation.eventstart","2001-09-30"],["dc.relation.isbn","3-908450-64-0"],["dc.relation.ispartof","Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology, GADEST 2001"],["dc.title","Platinum silicide precipitate formation during phosphorus diffusion gettering in silicon"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","361"],["dc.bibliographiccitation.journal","Solid State Phenomena"],["dc.bibliographiccitation.lastpage","366"],["dc.bibliographiccitation.volume","82/84"],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Sattler, A."],["dc.contributor.editor","Raineri, V."],["dc.date.accessioned","2018-11-07T10:33:09Z"],["dc.date.available","2018-11-07T10:33:09Z"],["dc.date.issued","2002"],["dc.description.abstract","In this paper we present results of DLTS measurements in dislocations decorated by Ni in n-FZ-Si., which is an ubiquitous impurity in silicon technology. Our experiments show that Ni segregation or precipitation at dislocations results in asymmetrically broadened DLTS-line, corresponding to deep localized acceptor states in an energy range Ec-(0.3-0.48)eV. We have also observed some unusual phenomena in DLTS, indicating possible diffusion of Ni along dislocations in a strong electric field and, probably, the electronic transport along decorated dislocations."],["dc.identifier.isi","000172421600057"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/44534"],["dc.language.iso","en"],["dc.notes.status","final"],["dc.notes.submitter","Najko"],["dc.publisher","Scitech Publications"],["dc.publisher.place","Zurich-Uetikon"],["dc.relation.conference","9th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2001)"],["dc.relation.eventend","2001-10-03"],["dc.relation.eventlocation","Santa Tecla"],["dc.relation.eventstart","2001-09-30"],["dc.relation.isbn","3-908450-64-0"],["dc.relation.ispartof","Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology, GADEST 2001"],["dc.relation.issn","1012-0394"],["dc.title","Electrical activity of dislocations in Si decorated by Ni"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","553"],["dc.bibliographiccitation.journal","Solid State Phenomena"],["dc.bibliographiccitation.lastpage","558"],["dc.bibliographiccitation.volume","95/96"],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroter, W."],["dc.date.accessioned","2018-11-07T10:52:36Z"],["dc.date.available","2018-11-07T10:52:36Z"],["dc.date.issued","2004"],["dc.description.abstract","We have studied external gettering of radioactive Co-57 in silicon containing different amounts of oxygen impurities. As a gettering layer we used a thin Au-layer. The amount of gettered cobalt was measured in-situ. We find that for oxygen concentrations below of 1.6(.)10(17)cm(-3) (ASTM F-121) cobalt diffuses into the Au:Si-layer according to the temperature dependent segregation coefficient which leads to an increase of the gettering effect with decreasing temperature. At an oxygen concentration of 7.8(.)10(17)cm(-3) however, the cobalt diffuses back into the sample when the temperature is lowered below about 930degreesC. Our observations show, for the first time, the binding of cobalt to oxygen related centers at gettering temperature."],["dc.identifier.isi","000189347700078"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/49147"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Trans Tech Publications Ltd"],["dc.publisher.place","Zürich"],["dc.relation.conference","10th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003)"],["dc.relation.eventend","2003-09-26"],["dc.relation.eventlocation","Berlin, Germany"],["dc.relation.eventstart","2003-09-21"],["dc.relation.isbn","3-908450-82-9"],["dc.relation.ispartof","Gettering and defect engineering in semiconductor technology (GADEST 2003)"],["dc.title","Interaction of interstitially dissolved cobalt and oxygen-related centres in silicon"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","175"],["dc.bibliographiccitation.journal","MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY"],["dc.bibliographiccitation.lastpage","181"],["dc.bibliographiccitation.volume","71"],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Seibt, M."],["dc.date.accessioned","2018-11-07T10:00:53Z"],["dc.date.available","2018-11-07T10:00:53Z"],["dc.date.issued","2000"],["dc.description.abstract","We present a quantitative computer model ('Gettering Simulator') of phosphorus diffusion gettering (PDG) that allows to simulate the PDG process. The model was checked for Au as a typical substitutional metallic impurity elements and for Co as an example of the fast diffusing interstitial 3d metals in Si. Here we will only discuss the gettering of substitutional metals. The 'Gettering Simulator' includes a model for P diffusion for phosphorus concentrations [P] up to the solubility limit. In this model, the main contribution to phosphorus diffusion at [P] < 2 x 10(19) cm(-3) comas from the kick-out mechanism, while at higher P concentrations the diffusion is dominated by phosphorus vacancy complexes. The latter results in the development of the well-known 'kink-and-tail' P and specific self-interstitial profiles. The gettering mechanism is described by a combination of three factors: (1) the Fermi level effect; (2) the formation of phosphorus-metal pairs; (3) the high concentration of self-interstitials in the bulk together with nearly equilibrium concentration in the region of high phosphorus concentration near the surface. The third factor was found to be very important for the PDG of substitutional metals. No local equilibrium is assumed in the model. Instead. the calculations are based on the reaction rates between different species. (C) 2000 Elsevier Science S.A. All rights reserved."],["dc.identifier.doi","10.1016/S0921-5107(99)00370-0"],["dc.identifier.isi","000085529700032"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/37901"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","Symposium F: Process Induced Defects in Semiconductors at the 1999 Spring Meeting of the European-Materials-Research-Society"],["dc.relation.eventlocation","STRASBOURG, FRANCE"],["dc.relation.issn","0921-5107"],["dc.title","Simulation of Al and phosphorus diffusion gettering in Si"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","327"],["dc.bibliographiccitation.issue","1"],["dc.bibliographiccitation.journal","PHYSICA STATUS SOLIDI B-BASIC RESEARCH"],["dc.bibliographiccitation.lastpage","336"],["dc.bibliographiccitation.volume","222"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Doller, A."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Zozime, A."],["dc.date.accessioned","2018-11-07T08:48:48Z"],["dc.date.available","2018-11-07T08:48:48Z"],["dc.date.issued","2000"],["dc.description.abstract","Various techniques of transmission electron microscopy as well as secondary ion mass spectroscopy have been used to study phosphorus diffusion gettering of platinum in silicon under conditions of high phosphorus concentrations. PtSi precipitates have been observed directly beneath the interface between silicon and the phosphorus silica glass formed on top of the wafers. Gettering at 920 degreesC leads to the formation of isolated PtSi particles adjacent to SIP precipitates whereas an almost closed silicide film is observed at 1100 degreesC in the absence of SiP precipitates. For the latter conditions we observe a broad band of extrinsic faulted loops which establish a supersaturation of silicon self-interstitials in the highly phosphorus doped layer. The results support previous modeling of the precipitation mode of phosphorus diffusion gettering which assumes that local currents of silicon self-interstitials may lead to silicide precipitate formation."],["dc.identifier.doi","10.1002/1521-3951(200011)222:1<327::AID-PSSB327>3.3.CO;2-L"],["dc.identifier.isi","000165822100030"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/21307"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Wiley-v C H Verlag Gmbh"],["dc.relation.issn","0370-1972"],["dc.title","Phosphorus diffusion gettering of platinum in silicon: Formation of near-surface precipitates"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]