Electrical activity of dislocations in Si decorated by Ni

Journal
Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology, GADEST 2001
ISSN
1012-0394
Date Issued
2002
Author(s)
Kveder, Vitaly
Schroter, W.
Sattler, A.
Editor(s)
Raineri, V.
Abstract
In this paper we present results of DLTS measurements in dislocations decorated by Ni in n-FZ-Si., which is an ubiquitous impurity in silicon technology. Our experiments show that Ni segregation or precipitation at dislocations results in asymmetrically broadened DLTS-line, corresponding to deep localized acceptor states in an energy range Ec-(0.3-0.48)eV. We have also observed some unusual phenomena in DLTS, indicating possible diffusion of Ni along dislocations in a strong electric field and, probably, the electronic transport along decorated dislocations.