Seibt, Michael

[["dc.bibliographiccitation.artnumber","195307"],["dc.bibliographiccitation.issue","19"],["dc.bibliographiccitation.journal","PHYSICAL REVIEW B"],["dc.bibliographiccitation.volume","70"],["dc.contributor.author","Borgardt, Nikolai I."],["dc.contributor.author","Plikat, B."],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Wagner, T."],["dc.date.accessioned","2018-11-07T10:44:27Z"],["dc.date.available","2018-11-07T10:44:27Z"],["dc.date.issued","2004"],["dc.description.abstract","The structure of the transition region between crystalline Si(111) and amorphous germanium has been studied by means of quantitative high-resolution electron microscopy. Using iterative image matching techniques the two-dimensional distribution function of germanium atoms in the transition region has been determined from focal image series of such interfaces. The distribution function reveals lateral ordering close to the crystalline substrate in addition to a pronounced layering usually observed for solid-liquid interfaces. It further shows that the transition region is elastically strained due to the volume misfit between crystalline silicon and amorphous germanium. The width of the transition region is 1.4 nm corresponding to about four (111) layers of crystalline silicon or germanium. Finally, the width of the bond-angle distribution for the first layer of germanium atoms on the silicon substrate is determined as 8.9degrees which is close to the corresponding value of 9.7degrees for bulk amorphous germanium."],["dc.identifier.doi","10.1103/PhysRevB.70.195307"],["dc.identifier.isi","000225477800085"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/47270"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","American Physical Soc"],["dc.relation.issn","1098-0121"],["dc.title","Atomic structure of the interface between silicon (111) and amorphous germanium"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","80"],["dc.bibliographiccitation.issue","2-3"],["dc.bibliographiccitation.journal","MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY"],["dc.bibliographiccitation.lastpage","86"],["dc.bibliographiccitation.volume","72"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Ewe, H."],["dc.contributor.author","Hedemann, H."],["dc.contributor.author","Riedel, F."],["dc.contributor.author","Sattler, A."],["dc.date.accessioned","2018-11-07T08:42:41Z"],["dc.date.available","2018-11-07T08:42:41Z"],["dc.date.issued","2000"],["dc.description.abstract","This paper summarizes current understanding of structural and electronic properties of nickel and copper silicide precipitates in silicon. From high-resolution electron microscopy studies it has been concluded that metastable structures form during early stages of precipitation which transform into energetically more favourable configurations during additional annealing or slow cooling. These structural transformations are related to changes of the electronic structure of the precipitates as revealed by deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). Deep bandlike states at initially formed NiSi2-and Cu,Si-platelets detected by DLTS have been attributed to a bounding dislocation and precipitate/matrix interfaces, respectively. Large NiSi2-precipitates act as internal Schottky barriers and may control the minority carrier lifetime of silicon samples. Recent advances in modeling EBIC contrasts provide insight how metal impurities affect the electrical behaviour of dislocations at different degrees of decoration. (C) 2000 Elsevier Science S.A. All rights reserved."],["dc.identifier.doi","10.1016/S0921-5107(99)00499-7"],["dc.identifier.isi","000086130900004"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/19758"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Sa"],["dc.publisher.place","Lausanne"],["dc.relation.conference","International Conference on Advanced Materials: Sympopsium M - Silicon-based Materials and Devices"],["dc.relation.eventlocation","BEIJING, PEOPLES R CHINA"],["dc.relation.issn","0921-5107"],["dc.title","Atomic structure and electronic states of nickel and copper silicides in silicon"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","PII S0927-0248(01)00178-7"],["dc.bibliographiccitation.firstpage","299"],["dc.bibliographiccitation.issue","1-4"],["dc.bibliographiccitation.journal","Solar Energy Materials and Solar Cells"],["dc.bibliographiccitation.lastpage","313"],["dc.bibliographiccitation.volume","72"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Spiecker, E."],["dc.date.accessioned","2018-11-07T10:31:05Z"],["dc.date.available","2018-11-07T10:31:05Z"],["dc.date.issued","2002"],["dc.description.abstract","This paper starts out by summarising the modelling and computer simulation of phosphorus diffusion gettering (PDG) of Au. The mobilisation of precipitated impurity atoms is discussed in the light of the silicon interstitial supersaturation provided by the phosphorus diffusion (PD). We then extend the gettering model to Co using bulk solubility data of highly P-doped Si, and find satisfactory agreement with experimental profiles of the total Co-concentration. Yet the pointed disagreement between the CoP/Co-g-ratio obtained through simulation and Mossbauer data leads to the conclusion that, in the case of phosphorus silicate glass (PSG) growth, segregation alone cannot unambigiously account for the observed gettering efficiency. Instead, it is proposed that PID induced silicide formation provides a more suitable explanation of the high efficiency of PDG accompanied with PSG growth. (C) 2002 Elsevier Science B.V. All rights reserved."],["dc.identifier.doi","10.1016/S0927-0248(01)00178-7"],["dc.identifier.isi","000175101100035"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/44016"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.relation.issn","0927-0248"],["dc.title","Mechanisms and computer modelling of transition element gettering in silicon"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","696"],["dc.bibliographiccitation.issue","4"],["dc.bibliographiccitation.journal","physica status solidi (a)"],["dc.bibliographiccitation.lastpage","713"],["dc.bibliographiccitation.volume","203"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Sattler, A."],["dc.contributor.author","Rudolf, C."],["dc.contributor.author","Voss, O."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroter, W."],["dc.date.accessioned","2018-11-07T10:15:38Z"],["dc.date.available","2018-11-07T10:15:38Z"],["dc.date.issued","2006"],["dc.description.abstract","This paper summarizes current understanding and predictive simulations of gettering processes predominantly applied in silicon photovoltaics. Special emphasis is put on various processes limiting gettering efficiency and kinetics, i.e. the mobility of interstitially dissolved metal species, the formation of the gettering layer, and the effect of immobile metal species. The latter are substitutional metal species, precipitates, complexes with defects related to non-metallic impurities, and finally the interaction with extended defects, in particular dislocations. Finally, alternative annealing schemes involving high-temperature rapid thermal processing are explored by simulations. It is shown that a processing window exists for a two-step process efficient for the removal of precipitates even under the constraints of a fixed thermal budget for phosphor-us diffusion. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim."],["dc.identifier.doi","10.1002/pssa.200664516"],["dc.identifier.isi","000236469200011"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/40847"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Wiley-v C H Verlag Gmbh"],["dc.publisher.place","Weinheim"],["dc.relation.conference","2nd Sino-German Symposium on the Silicon Age"],["dc.relation.eventlocation","Cottbus, GERMANY"],["dc.relation.issn","0031-8965"],["dc.title","Gettering in silicon photovoltaics: current state and future perspectives"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","527"],["dc.bibliographiccitation.journal","Solid State Phenomena"],["dc.bibliographiccitation.lastpage","538"],["dc.bibliographiccitation.volume","95/96"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Doller, A."],["dc.contributor.author","Zozime, A."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Spiecker, E."],["dc.date.accessioned","2018-11-07T10:52:36Z"],["dc.date.available","2018-11-07T10:52:36Z"],["dc.date.issued","2004"],["dc.description.abstract","This paper summarises current understanding of phosphorus diffusion gettering (PDG) of metal impurities in silicon. One mechanism that is generally operative is the enhanced solubility of substitutionally dissolved metal species at high P-doping levels due to the Fermi-level effect and pair formation with electrically active phosphorus. For those impurities which are predominantly dissolved on substitutional sites also in intrinsic silicon, an additional gettering effect results from the self-interstitial super-saturation in the intrinsic bulk with respect to the highly P-doped area. Experimental results for cobalt and platinum in silicon lead to the conclusion that silicide formation in the highly P-doped area close to SiP precipitates or directly at the interface to the phosphor-us silica glass (PSG) is a very effective mechanism beyond segregation. The role of electrically inactive phosphorus, self-interstitial injection and PSG growth in this regime is highlighted."],["dc.identifier.isi","000189347700075"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/49146"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Trans Tech Publications Ltd"],["dc.publisher.place","Zürich"],["dc.relation.conference","10th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003)"],["dc.relation.eventend","2003-09-26"],["dc.relation.eventlocation","Berlin, Germany"],["dc.relation.eventstart","2003-09-21"],["dc.relation.isbn","3-908450-82-9"],["dc.relation.ispartof","Gettering and defect engineering in semiconductor technology (GADEST 2003)"],["dc.title","Phosphorus diffusion gettering of metallic impurities in silicon: Mechanisms beyond segregation"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","PII [S0021-8979(00)04719-8]"],["dc.bibliographiccitation.firstpage","3795"],["dc.bibliographiccitation.issue","7"],["dc.bibliographiccitation.journal","Journal of Applied Physics"],["dc.bibliographiccitation.lastpage","3819"],["dc.bibliographiccitation.volume","88"],["dc.contributor.author","Myers, Shelley S."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Schroter, W."],["dc.date.accessioned","2018-11-07T09:41:29Z"],["dc.date.available","2018-11-07T09:41:29Z"],["dc.date.issued","2000"],["dc.description.abstract","The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered. (C) 2000 American Institute of Physics. [S0021-8979(00)04719-8]."],["dc.identifier.doi","10.1063/1.1289273"],["dc.identifier.isi","000089371600001"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/33742"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Amer Inst Physics"],["dc.relation.issn","0021-8979"],["dc.title","Mechanisms of transition-metal gettering in silicon"],["dc.type","review"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","PII S0304-3991(01)00153-X"],["dc.bibliographiccitation.firstpage","241"],["dc.bibliographiccitation.issue","4"],["dc.bibliographiccitation.journal","Ultramicroscopy"],["dc.bibliographiccitation.lastpage","258"],["dc.bibliographiccitation.volume","90"],["dc.contributor.author","Borgardt, Nikolai I."],["dc.contributor.author","Plikat, B."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Schroter, W."],["dc.date.accessioned","2018-11-07T10:31:05Z"],["dc.date.available","2018-11-07T10:31:05Z"],["dc.date.issued","2002"],["dc.description.abstract","For the analysis of images of homogeneous crystalline-amorphous interfaces we propose to average them along the interface obtaining the averaged interface image or the averaged intensity profile. Due to averaging, contrast components with the periodicity of the crystalline area of the image are extracted. Thus, the contrast features originating from the random overlap of the projected potentials of atoms in the amorphous layer are suppressed. It is shown that averaged images can be simulated by the multi-slice method using the novel approach to model the near interfacial amorphous structure by its mean atomic density distribution in front of the crystalline boundary. The crystalline structure is represented by its known atomic positions. We apply the proposed method to the investigation of the near interfacial short-range order in the c-Si/a-Ge crystalline-amorphous interface. (C) 2002 Elsevier Science B.V. All rights reserved."],["dc.identifier.doi","10.1016/S0304-3991(01)00153-X"],["dc.identifier.isi","000174770900001"],["dc.identifier.pmid","11942643"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/44020"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.relation.issn","0304-3991"],["dc.title","Analysis of high resolution transmission electron microscope images of crystalline-amorphous interfaces"],["dc.type","journal_article"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.artnumber","PII S0169-4332(01)00731-0"],["dc.bibliographiccitation.firstpage","61"],["dc.bibliographiccitation.issue","1-2"],["dc.bibliographiccitation.journal","Applied Surface Science"],["dc.bibliographiccitation.lastpage","68"],["dc.bibliographiccitation.volume","188"],["dc.contributor.author","Spiecker, E."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Winterhoff, R."],["dc.contributor.author","Scholz, F."],["dc.date.accessioned","2018-11-07T10:31:09Z"],["dc.date.available","2018-11-07T10:31:09Z"],["dc.date.issued","2002"],["dc.description.abstract","The great potential of exploiting growth-induced long-range atomic ordering for investigating strain relaxation in lattice-mismatched epitaxy is demonstrated by transmission electron microscopy (TEM) experiments performed on a CuPtB-type ordered (GaIn)P layer grown on top of a GaAs substrate. Due to the larger unit cell of the ordered structure compared to the zincblende structure of the disordered alloy some of the 60degrees misfit dislocations are no longer perfect dislocations, but are connected to antiphase boundaries (APBs) which were produced during the layer growth by dislocation glide. From the contours of these APBs in (110) cross-section TEM images, we are able to determine post-growth the layer thicknesses at which the individual 60degrees misfit dislocations were formed durin- the layer growth. This information is hardly available from any other technique. Apart from the problem of investigating a sufficiently large number of dislocations by TEM, this allows us to reconstruct the complete path of the strain relaxation. A striking feature revealed by the APBs is the simultaneous formation of many misfit dislocations with identical Burgers vectors at a layer thickness of about 12 times the critical thickness, indicating that dislocation multiplication took place during the layer growth. (C) 2002 Elsevier Science B.V. All rights reserved."],["dc.identifier.doi","10.1016/S0169-4332(01)00731-0"],["dc.identifier.isi","000175197200010"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/44038"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Elsevier Science Bv"],["dc.publisher.place","Amsterdam"],["dc.relation.conference","Spring Meeting of the European-Materials-Research-Society"],["dc.relation.eventlocation","STRASBOURG, FRANCE"],["dc.relation.issn","0169-4332"],["dc.title","Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy - A case study on CUPtB-type ordered (GaIn)P on GaAs"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","911"],["dc.bibliographiccitation.issue","5"],["dc.bibliographiccitation.journal","physica status solidi (a)"],["dc.bibliographiccitation.lastpage","920"],["dc.bibliographiccitation.volume","202"],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Kveder, Vitaly"],["dc.contributor.author","Schroter, W."],["dc.contributor.author","Voss, O."],["dc.date.accessioned","2018-11-07T11:13:23Z"],["dc.date.available","2018-11-07T11:13:23Z"],["dc.date.issued","2005"],["dc.description.abstract","The electrical properties of silicon materials containing dislocations are strongly affected by deep levels at or close to the dislocation core. Such deep levels are frequently thought to be due to metal impurities that are chemically bound to the dislocation core, segregated in the long-range strain field or precipitated at the dislocation. This paper summarizes recent experimental studies of the interaction of metal impurities with dislocations in silicon. Transmission electron microscopy and deep level transient spectroscopy are the main techniques to study precipitation at dislocations and binding or segregation of metal impurity atoms, respectively. Focus is drawn to precipitation of fast diffusing 3d transition metals where dislocations not only serve as nucleation sites but also establish fast growth kinetics. In addition, gold impurities in the strain field of dislocations give rise to an acceptor level with the capture kinetics of extended localized defects while the emission characteristics are hardly distinguished from those of the acceptor level of gold atoms in the undisturbed bulk. The results will be discussed in terms of possible response of the deep impurity level and the silicon bands to the dislocation strain field. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim."],["dc.identifier.doi","10.1002/pssa.200460515"],["dc.identifier.isi","000228679200044"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/53882"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Wiley-v C H Verlag Gmbh"],["dc.publisher.place","Weinheim"],["dc.relation.conference","International Workshop on Nitrides Semiconductors (IWN 2004)"],["dc.relation.eventlocation","Pittsburgh, PA"],["dc.relation.issn","0031-8965"],["dc.title","Structural and electrical properties of metal impurities at dislocations in silicon"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]

[["dc.bibliographiccitation.firstpage","225"],["dc.bibliographiccitation.issue","2"],["dc.bibliographiccitation.journal","Crystallography Reports"],["dc.bibliographiccitation.lastpage","232"],["dc.bibliographiccitation.volume","49"],["dc.contributor.author","Borgardt, Nikolai I."],["dc.contributor.author","Plikat, B."],["dc.contributor.author","Seibt, M."],["dc.contributor.author","Schroter, W."],["dc.date.accessioned","2018-11-07T10:50:33Z"],["dc.date.available","2018-11-07T10:50:33Z"],["dc.date.issued","2004"],["dc.description.abstract","The structure of an amorphous Ge layer near an interface with a Si(111) crystal was studied by quantitative high-resolution electron microscopy. It was found that the translational symmetry of a Si crystal leads to the crystal-like order in the positions of Ge atoms in the interfacial reprion, the width of which is about 1.4 nm. In this region, the average orientation of interatomic bonds tilted with respect to the interface compensates for the difference in the bond lengths in crystalline Si and amorphous Ge and is responsible for the tetraoonal distortion of the most likely atomic positions. (C) 2004 MAIK \"Nauka/Interperiodica\"."],["dc.identifier.doi","10.1134/1.1690422"],["dc.identifier.isi","000220973400016"],["dc.identifier.uri","https://resolver.sub.uni-goettingen.de/purl?gro-2/48681"],["dc.notes.status","zu prüfen"],["dc.notes.submitter","Najko"],["dc.publisher","Maik Nauka/interperiodica Publ"],["dc.publisher.place","Melville"],["dc.relation.conference","National Conference on Crystal Growth"],["dc.relation.eventlocation","Moscow, RUSSIA"],["dc.relation.issn","1063-7745"],["dc.title","The effect of the translational symmetry of crystalline silicon on the structure of amorphous germanium in the interfacial region"],["dc.type","conference_paper"],["dc.type.internalPublication","yes"],["dc.type.peerReviewed","yes"],["dc.type.status","published"],["dspace.entity.type","Publication"]]