Mechanisms of transition-metal gettering in silicon

ISSN
0021-8979
Date Issued
2000
Author(s)
Myers, Shelley S.
Schroter, W.
DOI
10.1063/1.1289273
Abstract
The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered. (C) 2000 American Institute of Physics. [S0021-8979(00)04719-8].