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Regular dislocation networks in silicon as a tool for nanostructure devices used in optics, biology, and electronics
ISSN
1613-6810
Date Issued
2007
Author(s)
Kittler, M.
Mchedlidze, T.
Arguirov, T.
Vyvenko, O. F.
Seifert, W.
Reiche, M.
Wilhelm, T.
Voss, O.
Fritzsche, W.
DOI
10.1002/smll.200600539
Abstract
Well-controlled fabrication of dislocation networks in Si using direct wafer bonding opens broad possibilities for nanotechnology applications. Concepts of dislocation-network-based light emitters, manipulators of biomolecules, gettering and insulating layers, and three-dimensional buried conductive channels are presented and discussed. A prototype of a Si-based light emitter working at a wavelength of about 1.5 mu m with an efficiency potential estimated at 1% is demonstrated.